Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Shengxin Yang"'
Autor:
Benwen Chen, Shengxin Yang, Jian Chen, Jingbo Wu, Ke Chen, Weili Li, Yihui Tan, Zhaosong Wang, Hongsong Qiu, Kebin Fan, Caihong Zhang, Huabing Wang, Yijun Feng, Yunbin He, Biaobing Jin, Xinglong Wu, Peiheng Wu
Publikováno v:
Light: Science & Applications, Vol 12, Iss 1, Pp 1-10 (2023)
Abstract Dynamic manipulation of electromagnetic (EM) waves with multiple degrees of freedom plays an essential role in enhancing information processing. Currently, an enormous challenge is to realize directional terahertz (THz) holography. Recently,
Externí odkaz:
https://doaj.org/article/94fc3d3c733648c58535b15f61b20868
Autor:
Na Bai, Kan‐Hao Xue, Jinhai Huang, Jun‐Hui Yuan, Wenlin Wang, Ge‐Qi Mao, Lanqing Zou, Shengxin Yang, Hong Lu, Huajun Sun, Xiangshui Miao
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 1, Pp n/a-n/a (2023)
Abstract The wake‐up phenomenon widely exists in hafnia‐based ferroelectric capacitors, which causes device parameter variation over time. Crystallization at a higher temperature has been reported to be effective in eliminating wake‐up, but hig
Externí odkaz:
https://doaj.org/article/9e4a5d5b568d42289925a6e3d6474d1b
Publikováno v:
Complexity, Vol 2022 (2022)
Aimed at that ubiquitous three-phase unbalance problem in low-voltage distribution networks, the spotted hyena optimizer (SHO) algorithm is used to optimize the commutation strategy of the three-phase load unbalance. A multitarget swapping mathematic
Externí odkaz:
https://doaj.org/article/9ae70a1313e840a1bd8175a66756acf6
Publikováno v:
JPhys Materials, Vol 6, Iss 2, p 024001 (2023)
In recent years, hafnia-based ferroelectrics have attracted enormous attention due to their capability of maintaining ferroelectricity below 10 nm thickness and excellent compatibility with microelectronics flow lines. However, the physical origin of
Externí odkaz:
https://doaj.org/article/0e943314e98149aeb72c68043ddbf8e8
Autor:
Shengxin Yang, Liang Ding, Shuai Wang, Chen Du, Longcheng Feng, Hongsong Qiu, Caihong Zhang, Jingbo Wu, Kebin Fan, Biaobing Jin, Jian Chen, Peiheng Wu
Publikováno v:
Physical Review Applied. 19
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4b291038ad2b4efdaeb7df010e85f2f
https://doi.org/10.1103/physrevapplied.19.034033
https://doi.org/10.1103/physrevapplied.19.034033
$\mathrm{HfO_2}$-based dielectrics are promising for nanoscale ferroelectric applications, and the most favorable material within the family is Zr-substituted hafnia, i.e., $\mathrm{Hf_{1-x}Zr_xO_2}$ (HZO). The extent of Zr substitution can be great,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6218d7cc0149ae380607581469cbbb65
http://arxiv.org/abs/2302.03852
http://arxiv.org/abs/2302.03852
Autor:
Na Bai, Kan‐Hao Xue, Jinhai Huang, Jun‐Hui Yuan, Wenlin Wang, Ge‐Qi Mao, Lanqing Zou, Shengxin Yang, Hong Lu, Huajun Sun, Xiangshui Miao
Publikováno v:
Advanced Electronic Materials. 9
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66d01106a71d5b3157cb78af5572854d
https://doi.org/10.1002/aelm.202200737
https://doi.org/10.1002/aelm.202200737
Autor:
Shengxin Yang, Xiaobi Wang, Yongfeng Liu, Jia Wu, Wenhong Zhou, Xiangshui Miao, Li Huang, Kan-Hao Xue
Publikováno v:
Physical Review Applied. 18
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d34c5186001ac21b44138c4f12f4456a
https://doi.org/10.1103/physrevapplied.18.024058
https://doi.org/10.1103/physrevapplied.18.024058
Autor:
Bowen Tan, Xingcheng Xiang, Longcheng Feng, Shengxin Yang, Wei Zhang, Caihong Zhang, Jingbo Wu, Kebin Fan, Biaobing Jin, Jian Chen, Huabing Wang, Peiheng Wu
Publikováno v:
Applied Physics Letters. 122:151101
Subwavelength-sized metallic structures exhibit extraordinary responses to electromagnetic waves due to their geometry, generating surface plasmon polaritons (SPPs) at the metal–dielectric interface. The development and application of terahertz (TH
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf3a0b917d5da7b0945ce9c4adfcd5f0
https://doi.org/10.1063/5.0142160
https://doi.org/10.1063/5.0142160
Publikováno v:
The Journal of Chemical Physics. 158:094103
DFT-1/2 is an efficient band gap rectification method for density functional theory (DFT) under local density approximation (LDA) or generalized gradient approximation. It was suggested that non-self-consistent DFT-1/2 should be used for highly ionic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b268867c015773e43af8a385364af3e1
https://doi.org/10.1063/5.0137534
https://doi.org/10.1063/5.0137534