Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Shengqing Gao"'
Autor:
Jiajun Shi, Qianyi Zhang, Xi Yin, Jiahui Ye, Shengqing Gao, Chen Chen, Yaxuan Yang, Baojuan Wu, Yuping Fu, Hongmei Zhang, Zhangding Wang, Bo Wang, Yun Zhu, Hongyan Wu, Yongzhong Yao, Guifang Xu, Qiang Wang, Shouyu Wang, Weijie Zhang
Publikováno v:
International Journal of Biological Sciences. 19:449-464
Publikováno v:
Physical Review D. 107
We resolve the potential-restriction problem in K/G inflation by introducing nonminimal coupling. In this context, Higgs field successfully drives inflation satisfying CMB observations while enhancing curvature perturbations at small scales, which in
Publikováno v:
Functional Materials Letters. 15
Lithium-rich oxide cathode material focuses the attention of many researchers due to its excellent electrochemical performance for lithium–ion batteries. Further improvement on the performance with a strong operability approach can be beneficial to
Autor:
Hui, Liang, Ting, Tang, Hanyu, Huang, Tao, Li, Chaochao, Gao, Yanling, Han, Bin, Yuan, Shengqing, Gao, Handong, Wang, Meng-Liang, Zhou
Publikováno v:
Experimental Neurology. 354:114100
Among the multiple kinds of neuronal cell death triggered by traumatic brain injury (TBI), ferroptosis, an iron-dependent lipid peroxidative regulatory cell death, has a critical role. Peroxisome proliferator-activated receptor-γ (PPARγ) is a nucle
Autor:
Tao, Tang, Liting, Wu, Shengqing, Gao, Fang, He, Ming, Li, Jianfeng, Wen, Xinyu, Li, Fuchi, Liu
Publikováno v:
Materials
Inducing magnetic moments in graphene is very important for its potential application in spintronics. Introducing sp3-defects on the graphene basal plane is deemed as the most promising approach to produce magnetic graphene. However, its universal va
Publikováno v:
Materials; Volume 11; Issue 4; Pages: 616
Materials, Vol 11, Iss 4, p 616 (2018)
Materials, Vol 11, Iss 4, p 616 (2018)
Inducing magnetic moments in graphene is very important for its potential application in spintronics. Introducing sp3-defects on the graphene basal plane is deemed as the most promising approach to produce magnetic graphene. However, its universal va