Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Shengguo, Cao"'
Publikováno v:
Zhongguo quanke yixue, Vol 27, Iss 21, Pp 2639-2645 (2024)
Background Thyroid autoantibody is a marker for the diagnosis of Hashimoto's thyroiditis (HT), and B cells are essential in the pathogenesis of HT. Enhancer of Zeste homolog 2 (EZH2), which is an important epigenetic regulator, plays an important rol
Externí odkaz:
https://doaj.org/article/f3c514ada14a42d1a87437263626f8d5
Publikováno v:
In Surfaces and Interfaces March 2024 46
Publikováno v:
IEEE Photonics Journal, Vol 12, Iss 3, Pp 1-11 (2020)
Single photon avalanche diodes (SPAD) based on avalanche effect have been widely used in the detection of extremely weak light signals. Conventional SPAD devices manufactured with silicon-based CMOS technology have a high dark count rate (DCR), makin
Externí odkaz:
https://doaj.org/article/9451a4b5ba254a14a1de08ecd772f2fb
Publikováno v:
IEEE Photonics Journal, Vol 12, Iss 3, Pp 1-11 (2020)
Single photon avalanche diodes (SPAD) based on avalanche effect have been widely used in the detection of extremely weak light signals. Conventional SPAD devices manufactured with silicon-based CMOS technology have a high dark count rate (DCR), makin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c9056059de61dc157afd1bb3191c8175
https://ieeexplore.ieee.org/document/9090993/
https://ieeexplore.ieee.org/document/9090993/
Publikováno v:
Sixth Symposium on Novel Optoelectronic Detection Technology and Applications.
In this paper, an improved photodetector structure, finger-interdigitated MOS type composite optoelectronic photodetector is designed. We did not change the original structure of the MOS device. The back gate effect of the MOS structures and the elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5df7c4a9680b23f809c2ea9945b5425
https://doi.org/10.1117/12.2560212
https://doi.org/10.1117/12.2560212
Publikováno v:
Optics Communications. 482:126588
Fluorescent optical fiber temperature sensors require high-performance silicon-based single photon detectors with large-scale on-chip integration capabilities to improve the detection accuracy of the system. Therefore, this paper proposes a gate-cont
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2dedede65a12687bc74ecfc1897f287c
https://doi.org/10.1016/j.optcom.2020.126588
https://doi.org/10.1016/j.optcom.2020.126588
Publikováno v:
Semiconductor Science and Technology. 36:015003
Due to the unique nonlinear theory of memristors, it has been a research hotspot in the application of bionic synapses and neuromorphic computing for a long time. However, the currently designed memristors are difficult to be compatible with standard
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1dc2f72b32deaaf3501bb19dc48d21ca
https://doi.org/10.1088/1361-6641/abc2e8
https://doi.org/10.1088/1361-6641/abc2e8
Publikováno v:
Solid-State Electronics. 161:107634
Both traditional dual direction SCR (TDDSCR) and deep well gate-controlled dual direction SCR (DGC-DDSCR) are designed and fabricated in a 0.5 μm CMOS process. The ESD performance of the DDSCR device is predicted and verified by two-dimensional devi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6f81bc4eb5fd24368088c51b065888a
https://doi.org/10.1016/j.sse.2019.107634
https://doi.org/10.1016/j.sse.2019.107634
Publikováno v:
Japanese Journal of Applied Physics. 58:112004
Nowadays, memristors are one of the most important ways to realize the nerve synapse. Memristors agree quite well with biological synapses, because they has an electrical resistance that changes from external application conditions. In this paper, we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03d5dd97aba52ce0247ca920ec4d00d4
https://doi.org/10.7567/1347-4065/ab4b69
https://doi.org/10.7567/1347-4065/ab4b69
Publikováno v:
2011 IEEE Radio Frequency Integrated Circuits Symposium.
A novel wide tuning range variable gain differential low-noise amplifier (LNA) with digital assisted automatic tuning loop for multi-mode receiver is proposed in this paper. Common gate LNA with cross-coupled capacitor (CCC) and positive feedback is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::405b3e92c282d6b5f644748d0df6cc5b
https://doi.org/10.1109/rfic.2011.5940666
https://doi.org/10.1109/rfic.2011.5940666