Zobrazeno 1 - 10
of 221
pro vyhledávání: '"ShengXiang Jiang"'
Autor:
Menglai Lei, Huanqing Chen, Muhammad Saddique Akbar Khan, Shukun Li, Rui Lang, Peijun Wen, Guo Yu, Shengxiang Jiang, Hua Zong, Xiaodong Hu
Publikováno v:
Applied Surface Science Advances, Vol 17, Iss , Pp 100449- (2023)
GaN-based III-Nitride compound semiconductors are fundamental materials for high-performance optoelectronic and electronic devices. Low-defect-density substrate has been a major bottleneck in achieving high internal quantum efficiency and high breakd
Externí odkaz:
https://doaj.org/article/37d6ccf6c2b64a0c8e7b5b7cdac1ebeb
Publikováno v:
Water, Vol 16, Iss 2, p 215 (2024)
Extensive studies have been performed on the effectiveness of scour protection against scour erosion progression. But there is little research to date evaluating the effect of scour protection on vertical resistance behaviour of monopile foundations.
Externí odkaz:
https://doaj.org/article/ce60b5c44e12485fbdaf5f6afce8930c
Autor:
Qiang Li, Xinquan Wang, Kenneth Gavin, Shengxiang Jiang, Hongguo Diao, Mingyuan Wang, Kangyu Wang
Publikováno v:
Water, Vol 16, Iss 2, p 226 (2024)
Scour leads to the loss of soil around monopile foundations for offshore wind turbines, which affects their structural safety. In this paper, the effect of scour on the lateral behaviour of monopiles was extensively investigated using finite element
Externí odkaz:
https://doaj.org/article/f16f8b6709034edaaed3c2337ce260fd
Metal/N-doped carbon (Metal = Ag, Cu, Ni) nanocatalysts for selective hydrogenation of 4-nitrophenol
Publikováno v:
Catalysis Communications, Vol 151, Iss , Pp 106280- (2021)
This work reports on the use of an acrylamide mediated polymerized complexing method for the preparation of metal/N-doped carbon (metal = Ag, Cu, Ni) nanocatalysts and their excellent catalytic behavior toward hydrogenation of 4-nitrophenol. Acrylami
Externí odkaz:
https://doaj.org/article/09d0fe553d144686bcd99a0f57392e16
Publikováno v:
Materials, Vol 10, Iss 5, p 483 (2017)
The problem of weak magnetism has hindered the application of magnetic semiconductors since their invention, and on the other hand, the magnetic mechanism of GaN-based magnetic semiconductors has been the focus of long-standing debate. In this work,
Externí odkaz:
https://doaj.org/article/6011c00455d8494aa98fc68610dc9c0e
Autor:
Linghai Meng, Shukun Li, Huanqing Chen, Menglai Lei, Guo Yu, Peijun Wen, Jianbo Fu, Shengxiang Jiang, Hua Zong, Dong Li, Xiaodong Hu
Publikováno v:
Journal of Luminescence. 261:119913
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3df2600beada143fdd79734594467d53
https://doi.org/10.1016/j.jlumin.2023.119913
https://doi.org/10.1016/j.jlumin.2023.119913
Autor:
Shukun Li, Menglai Lei, Rui Lang, Guo Yu, Huanqing Chen, Peijun Wen, Muhammad Saddique Akbar Khan, Linghai Meng, Hua Zong, Shengxiang Jiang, Xiaodong Hu
Publikováno v:
Semiconductor Science and Technology. 38:075007
Electron leakage currents seriously limit the power conversion efficiencies (PCEs) of gallium nitride (GaN)-based laser diodes (LDs). To minimize the leakage currents, electron blocking layers are generally applied in the p-type region. However, few
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2fb81be4a9a8cf57ea8d97e4f81d66a
https://doi.org/10.1088/1361-6641/acd573
https://doi.org/10.1088/1361-6641/acd573
Publikováno v:
New Journal of Chemistry. 45:15801-15807
Sol–gel method was used to prepare Ni12P5/N-doped carbon and amorphous Ni–P–C materials where the dried gel precursors were heated under N2 atmosphere in a tube furnace. By using ethylene diamine tetraacetic acid (EDTA) as the chelating agent,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebcda381099501c3e59282dfc53bfec4
https://doi.org/10.1039/d1nj01616d
https://doi.org/10.1039/d1nj01616d
Autor:
Shukun Li, Guo Yu, Rui Lang, Menglai Lei, Huanqing Chen, Muhammad Saddique Akbar Khan, Linghai Meng, Hua Zong, Shengxiang Jiang, Peijun Wen, Wei Yang, Xiaodong Hu
Publikováno v:
Optics express. 30(3)
The electrical-to-optical power conversion efficiencies of the light-emitting devices based on gallium nitride (GaN) are seriously limited by electron leakage currents due to the relatively low mobility and activation ratio of holes. However, there h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cfe4ce6d03563f5d6f9c120fbfa3e84a
https://pubmed.ncbi.nlm.nih.gov/35209645
https://pubmed.ncbi.nlm.nih.gov/35209645
Autor:
Shukun Li, Menglai Lei, Rui Lang, Guo Yu, Huanqing Chen, Peijun Wen, Muhammad Saddique Akbar Khan, Linghai Meng, Hua Zong, Shengxiang Jiang, Xiaodong Hu
Publikováno v:
Journal of Applied Physics. 132:145701
Electron leakage currents seriously hinder GaN-based blue laser diodes (LDs) from high wall-plug efficiencies. Inserting an ultra-thin AlGaN electron blocking layer (EBL) in the epitaxy structure is a major technique to suppress the leakage currents
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::341c35207a7719a23b34b163b230975e
https://doi.org/10.1063/5.0103518
https://doi.org/10.1063/5.0103518