Zobrazeno 1 - 10
of 69
pro vyhledávání: '"ShengQiang Xu"'
Autor:
Jieqiong Liu, Ying Wang, Zhenluan Tian, Ying Lin, Hengyu Li, Zhaowen Zhu, Qiang Liu, Shicheng Su, Yinduo Zeng, Weijuan Jia, Yaping Yang, Shengqiang Xu, Herui Yao, Wen Jiang, Erwei Song
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-10 (2022)
Therapeutic options for patients with triple-negative breast cancer (TNBC) in later-line setting are limited. Here the authors report the results of a phase 2 clinical trial to evaluate efficacy and safety of the combination of camrelizumab (anti-PD1
Externí odkaz:
https://doaj.org/article/7cc1501ea4f541e187869803173315e8
Autor:
Wenfeng Fang, Haoxuan Jin, Huaqiang Zhou, Shaodong Hong, Yuxiang Ma, Yaxiong Zhang, Xiaofan Su, Longyun Chen, Yunpeng Yang, Shengqiang Xu, Yuwei Liao, Yuming He, Hongyun Zhao, Yan Huang, Zhibo Gao, Li Zhang
Publikováno v:
Molecular Cancer, Vol 20, Iss 1, Pp 1-6 (2021)
Externí odkaz:
https://doaj.org/article/3f6e5c49465244c7a6d86b2002030ecc
Autor:
Ye Li, Jiaqian Wang, Liangliang Wu, Xiaoting Li, Xiaoyun Zhang, Guoqing Zhang, Shengqiang Xu, Shengjie Sun, Shunchang Jiao
Publikováno v:
Frontiers in Immunology, Vol 12 (2021)
Dynamic changes of the peripheral T cell receptor (TCR) and soluble receptors and ligands (sRLs) have the potential to be used as biomarkers to monitor the evolution of the immune system in tumor patients undergoing immunotherapy. These functional bi
Externí odkaz:
https://doaj.org/article/1d85105d667541d4801021056ffbf924
Autor:
Yuye Kang, Yi-Chiau Huang, Kwang Hong Lee, Shuyu Bao, Wei Wang, Dian Lei, Saeid Masudy-Panah, Yuan Dong, Ying Wu, Shengqiang Xu, Chuan Seng Tan, Xiao Gong, Yee-Chia Yeo
Publikováno v:
AIP Advances, Vol 8, Iss 2, Pp 025111-025111-7 (2018)
Strain relaxation of biaxially strained Ge1-xSnx layer when it is patterned into Ge1-xSnx fin structures is studied. Ge1-xSnx-on-insulator (GeSnOI) substrate was realized using a direct wafer bonding (DWB) technique and Ge1-xSnx fin structures were f
Externí odkaz:
https://doaj.org/article/9906f351723540bd99cb26b277df3333
Publikováno v:
Neoplasia: An International Journal for Oncology Research, Vol 12, Iss 3, Pp 284-293 (2010)
Ribosomal large subunit protein RPL41 is a basic (positively charged) peptide consisting of only 25 amino acids. An antisense-based functional screening revealed that the down-regulation of RPL41 led to an anchorage-independent growth of NIH3T3 cells
Externí odkaz:
https://doaj.org/article/1376c78738444c30b81aafe9a3b25a7b
Publikováno v:
PLoS ONE, Vol 9, Iss 7, p e100824 (2014)
Apoptosis-inducing factor (AIF) plays a crucial role in caspase-independent programmed cell death by triggering chromatin condensation and DNA fragmentation. Therefore, it might be involved in cell homeostasis and tumor development. In this study, we
Externí odkaz:
https://doaj.org/article/165cebf6a2614a30b53fb8da51d20722
Autor:
Shengqiang Xu, Chuan Seng Tan, Yi-Chiau Huang, Xiao Gong, Hao Zhou, Qimiao Chen, Lin Zhang, Yuhao Jin, Shaoteng Wu
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 28:1-9
Recently, high-performance GeSn photodiodes (PDs) with external light illuminated on the device's top surface have been demonstrated on various platforms. However, for image sensing systems with a focal-plane array (FPA), the front-illuminated sensor
Autor:
Kaizhen Han, Gengchiau Liang, Zhigang Song, Sheng Luo, Chengkuan Wang, Shengqiang Xu, Eugene Y.-J. Kong, Yuye Kang, Weijun Fan, Xiao Gong, Annie Kumar
Publikováno v:
Nano Letters. 21:5555-5563
We demonstrate Ge0.95Sn0.05 p-channel gate-all-around field-effect transistors (p-GAAFETs) with sub-3 nm nanowire width (WNW) on a GeSn-on-insulator (GeSnOI) substrate using a top-down fabrication process. Thanks to the excellent gate control by empl
Autor:
Hongyun Zhao, Longyun Chen, Yunpeng Yang, Liao Yuwei, Gao Zhibo, Yan Huang, Yaxiong Zhang, Li Zhang, Shaodong Hong, Su Xiaofan, Jin Haoxuan, Yuxiang Ma, Wenfeng Fang, Shengqiang Xu, Huaqiang Zhou, Yuming He
Publikováno v:
Molecular Cancer, Vol 20, Iss 1, Pp 1-6 (2021)
Molecular Cancer
Molecular Cancer
Publikováno v:
IEEE Transactions on Electron Devices. 68:118-124
We investigate the temperature dependence of field-effect mobility ( $\mu _{eff}$ ) on amorphous indium–gallium–zinc oxide ( $\alpha $ -IGZO) thin-film transistors (TFTs) having 10-nm-thick HfO2. Thanks for the downscaling of the equivalent oxide