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Autor:
Yu-Cheng Kao, Hao-Kai Peng, Sheng-Wei Hsiao, Kuo-An Wu, Chia-Ming Liu, Sheng-Yen Zheng, Yung-Hsien Wu, Pin-Jiun Wu
Publikováno v:
APL Materials, Vol 12, Iss 5, Pp 051118-051118-9 (2024)
Ferroelectric HfO2 thin film has been widely explored due to its superior characteristics, such as high switching speed, scalability, and long data retention. However, it still faces challenges in achieving good stability due to the wake-up and split
Externí odkaz:
https://doaj.org/article/7408efd25841429395a9cab0fd3118e8
