Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Sheng-Tsung Chen"'
Autor:
Sheng-Tsung Chen, 陳聖宗
102
Cuprous oxide is a direct band-gap semiconductor, energy gap size is 2.1eV with a high absorption coefficient in the visible region. Magnesium (Mg)-doped cuprous oxide (Cu2O:Mg) thin films are fabricated on copper (Cu) substrate by chemical
Cuprous oxide is a direct band-gap semiconductor, energy gap size is 2.1eV with a high absorption coefficient in the visible region. Magnesium (Mg)-doped cuprous oxide (Cu2O:Mg) thin films are fabricated on copper (Cu) substrate by chemical
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/a3mgwz
Autor:
Sheng-Tsung Chen, 陳聖宗
98
Following by the development of information industry, the optical storage is changed dramatically. However, the issue of vibration and noise is largely increased with the progressing of the technology. Therefore, to find out the cause of nois
Following by the development of information industry, the optical storage is changed dramatically. However, the issue of vibration and noise is largely increased with the progressing of the technology. Therefore, to find out the cause of nois
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/99792727351876823615
Autor:
Sheng-tsung Chen, 陳聖宗
97
We demonstrate the fabrication of an Al/MgCaTiO3 MIS device which using pulse laser deposition (PLD) to deposit MgCaTiO3 (MCT) thin films on p-type Si (100) substrate. Raman spectroscopy, X-ray diffraction (XRD), Scanning electron microscopy
We demonstrate the fabrication of an Al/MgCaTiO3 MIS device which using pulse laser deposition (PLD) to deposit MgCaTiO3 (MCT) thin films on p-type Si (100) substrate. Raman spectroscopy, X-ray diffraction (XRD), Scanning electron microscopy
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/x8zd22
Autor:
B. Huang, Neng-Tai Shih, Chung-Yuan Lee, Yi-Jung Chen, Sheng-Tsung Chen, Chia Chuan Hsu, Pei-Ing Lee, Chao-Sung Lai, G. Chuang, Shian-Jyh Lin
Publikováno v:
IEEE Transactions on Electron Devices. 56:1608-1617
In this paper, we successfully demonstrated gate-induced drain leakage (GIDL) improvements by millisecond flash anneal (MFLA) on a DRAM product. Fundamental studies on blanket wafers and the device characteristics of product wafers showed positive re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d750f18bb03ac9050b690101d15895cb
https://doi.org/10.1109/ted.2009.2022689
https://doi.org/10.1109/ted.2009.2022689
Autor:
Pei-Ing Lee, B. Huang, Yi-Jung Chen, Chung-Yuan Lee, Shian-Jyh Lin, Neng-Tai Shih, Sheng-Tsung Chen, Chao-Sung Lai
Publikováno v:
2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
We successfully demonstrate the millisecond flash anneal (MFLA) on a matured DRAM product. The GIDL improvements for array NMOS, periphery N and P MOS are 14.5%,15%, and 39% respectively. The mechanisms of GIDL impact at different process stages have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35a9b008254746a9ec319f3e7332915e
https://doi.org/10.1109/vtsa.2008.4530817
https://doi.org/10.1109/vtsa.2008.4530817
Autor:
Shian-Jyh Lin, Neng-Tai Shih, Brady Huang, Sheng-Tsung Chen, Chung-Yuan Lee, Ruey-Dar Chang, Pei-Ing Lee, Graham Chuang, Yi-Jung Chan, Wei Chih. Wang, Chao-Sung Lai
Publikováno v:
Journal of The Electrochemical Society. 158:H363
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b0e4c4b023984e03aeee8578c0846f4
https://doi.org/10.1149/1.3547701
https://doi.org/10.1149/1.3547701
Autor:
Sheng Min Wu, Ho Ming Shei, Sheng Tsung Chen, Ming Chang Shih, Wei Chun Su, Shih Chang Wang, Chang En Ho, Chih Wei Tien
Publikováno v:
Japanese Journal of Applied Physics. 48:04C114
We report the observation of the emission of solitons from a semiconductor circular ridge waveguide ring laser with a Y-junction coupler. The light–current (L–I) characteristics of the soliton emission through the nonwaveguide region, which refer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1f5f426e27dae02b0797757d3f0f3ca
https://doi.org/10.1143/jjap.48.04c114
https://doi.org/10.1143/jjap.48.04c114
Autor:
Shian-Jyh Lin, Chao-Sung Lai, Yi-Jung Chen, Sheng-Tsung Chen, Chia Chuan Hsu, Huang, Brady, Chuang, Graham, Neng-Tai Shih, Chung-Yuan Lee, Pei-Ing Lee
Publikováno v:
IEEE Transactions on Electron Devices; Aug2009, Vol. 56 Issue 8, p1608-1617, 10p, 3 Black and White Photographs, 1 Diagram, 2 Charts, 5 Graphs
Autor:
Shian-Jyh Lin, Chao-Sung Lai, Sheng-Tsung Chen, Yi-Jung Chen, Huang, B., Neng-Tai Shih, Chung-Yuan Lee, Pei-Ing Lee
Publikováno v:
2008 International Symposium on VLSI Technology, Systems & Applications (VLSI-TSA); 2008, p99-100, 2p