Zobrazeno 1 - 10
of 39
pro vyhledávání: '"Sheng-Min Yu"'
Publikováno v:
Energies, Vol 15, Iss 3, p 919 (2022)
In this study, we report a perovskite solar cell (PSC) can be benefited from the high quality of inorganic nickel oxide (NiOx) as a hole transport layer (HTL) film fabricated from the physical vapor deposition (PVD) process. The power conversion effi
Externí odkaz:
https://doaj.org/article/561fdd9c65e040ae921868c17fa6515f
Autor:
Sheng-Min Yu, 游聖民
98
In this study, we will discuss a digital intelligent baby-watch-and-care system that can recognize baby''s expression and detect the external object. The system will alert watchers when it detects something around mouth and nose, and a vomit
In this study, we will discuss a digital intelligent baby-watch-and-care system that can recognize baby''s expression and detect the external object. The system will alert watchers when it detects something around mouth and nose, and a vomit
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/83502166059607439703
Autor:
Sheng-Min Yu, 余尚珉
96
Because the threshold voltage of transistors does not scale with the technology, circuits used in the pipelined ADC in the past could not obtain the desired dynamic range in low voltage. Several solutions have been proposed to overcome the pr
Because the threshold voltage of transistors does not scale with the technology, circuits used in the pipelined ADC in the past could not obtain the desired dynamic range in low voltage. Several solutions have been proposed to overcome the pr
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/65551335380710298135
Autor:
Sheng-Min Yu, 游勝閔
94
Indium tin oxide (ITO) films were deposited on soda-lime glass substrates by dip coating. Post-annealing condition was an important parameter which influenced film’s structure and properties obviously. Two main issues were investigated.
Indium tin oxide (ITO) films were deposited on soda-lime glass substrates by dip coating. Post-annealing condition was an important parameter which influenced film’s structure and properties obviously. Two main issues were investigated.
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/47550861782551311252
Publikováno v:
Organic Electronics. 65:266-274
Mixture of anti-solvents plays a decisive factor on the preparation of active layers for perovskite photovoltaic applications. This work explores the perovskite precursor treatment with various mixture of anti-solvents, in which it, not only improves
Autor:
Chien-Chung Hsu, Bo-Yi Liou, Sheng-Min Yu, Vembu Suryanarayanan, Kun Mu Lee, Chuan-Jung Lin, Ming-Chung Wu
Publikováno v:
Solar Energy Materials and Solar Cells. 172:368-375
Anti-solvents play a critical role on the preparation of perovskite active layers for photovoltaic applications. This work explores the treatment of various anti-solvents for adjusting the crystallinity and morphology of perovskite active layer. It i
Publikováno v:
Solar Energy Materials and Solar Cells. 227:111014
Recently, a hybrid perovskite material, ABX3 (A= Cs, CH3NH3, NH2CHNH2; B= Pb, Sn; X= Cl, Br, I), has received much attention as an active layer in new-generation solar cells. This material is usually fabricated with either a one-step or a two step pr
Publikováno v:
IEEE Sensors Journal. 17:5087-5092
The in situ growth of Al2O3 on TiO2 by ultrasonic spray pyrolysis deposition is presented in this paper. Here, Al2O3 is used as the passivation and the antireflection layer. TiO2-based photodetectors (PDs) with Al2O3, SiO2, and no passivation layers
Autor:
Wan-Ying Chou, Wen-Ching Sun, Shou-Yi Ho, Li-Fang Lu, Sheng-Min Yu, Hung-Chou Liao, Wei-Jen Lu, Tzu-Yu Wang
Publikováno v:
MRS Advances. 2:777-782
SiO2-MgF2/TiO2 double-layer films with antireflective, self-cleaning and adherent properties were prepared by spin-coating SiO2-MgF2 and TiO2 sol on glass substrate successively and subsequently being calcined at 250°C. The optical and structural pr
Autor:
Ching-Sung Lee, Wei-Chou Hsu, Han-Yin Liu, Wen-Ching Sun, Sung-Yen Wei, Meng-Hsueh Chiang, Chih-Wei Lin, Sheng-Min Yu
Publikováno v:
IEEE Electron Device Letters. 38:91-94
This letter demonstrates an integration process of in situ Cl− doped Al2O3 and gate recess technique to fabricate the enhancement mode AlGaN/GaN MOSHEMTs. The Cl− doped Al2O3 thin film is deposited by the ultrasonic spray pyrolysis deposition and