Zobrazeno 1 - 10
of 43
pro vyhledávání: '"Sheng-Fu Hsu"'
Autor:
Sheng-Fu Hsu, 許盛富
99
Postponed disclosure due to patent applications.
Postponed disclosure due to patent applications.
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/r373jx
Autor:
Sheng-Fu Hsu, 許勝富
99
This works deals with the existence and uniqueness of classical solutions of the Dirichlet problem (P) det(D2u − h|Du|2I) = f(x) in Omega u = 0 on boundary of Omega, in a uniformly convex domain Omega of Rn. In this thesis, we prove the exi
This works deals with the existence and uniqueness of classical solutions of the Dirichlet problem (P) det(D2u − h|Du|2I) = f(x) in Omega u = 0 on boundary of Omega, in a uniformly convex domain Omega of Rn. In this thesis, we prove the exi
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/8wdgur
Autor:
Sheng-Fu Hsu, 許勝富
99
In this paper we use the commercial semiconductor process and device simulator, Sentaurus, to simulate for one-dimensional ion implant characteristic, the two-dimensional ion implantation 80-nm metal-oxide-semiconductor field-effect transisto
In this paper we use the commercial semiconductor process and device simulator, Sentaurus, to simulate for one-dimensional ion implant characteristic, the two-dimensional ion implantation 80-nm metal-oxide-semiconductor field-effect transisto
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/70718075250348370912
Autor:
Bill Kiang, Y. S. Tsai, Hsi-Yu Kuo, Sheng-Fu Hsu, Chuan-Li Chang, Yu-Lin Chu, Ming-Yi Wang, Kenneth Wu
Publikováno v:
IRPS
In this paper, a new mechanism of signal path charging damage is observed across a separated power domain interface from the non-DNW (Deep N-Well) to DNW region. This damage mechanism is unlike the damage outside DNW from the DNW to non-DNW region un
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9389daf0a006e89f69adf5804488dd94
https://doi.org/10.1109/irps.2018.8353631
https://doi.org/10.1109/irps.2018.8353631
Autor:
Sheng-Fu Hsu, Ming-Dou Ker
Publikováno v:
IEEE Transactions on Electron Devices. 54:2002-2010
The bipolar (underdamped sinusoidal) transient noise on power pins of CMOS integrated circuits (ICs) can trigger latchup in CMOS ICs under system-level electrostatic-discharge test. Two dominant parameters of bipolar transient noise-damping frequency
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84c1c7a6754f321e503a7b187a29b93a
https://doi.org/10.1109/ted.2007.901391
https://doi.org/10.1109/ted.2007.901391
Autor:
Sheng-Fu Hsu, Ming-Dou Ker
Publikováno v:
IEEE Transactions on Electron Devices. 54:840-851
The dependence of device structures on latchup immunity in a 0.25-mum high-voltage (HV) 40-V CMOS process with drain-extended MOS (DEMOS) transistors has been verified with silicon test chips and investigated with device simulation. Layout parameters
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24b0f7cc9c325906726cc85d62a26c34
https://doi.org/10.1109/ted.2007.892013
https://doi.org/10.1109/ted.2007.892013
Autor:
Jer-Yuan Jao, Sheng-Fu Hsu
Publikováno v:
IRPS
A novel on-chip surge protection design integrated within xDSL line driver IC is proposed, which has been successfully verified in a 0.11-μm CMOS process to sustain ITU-T surge test of up to 8kV. Compared with the traditional higher cost solution wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07323b496f73b27fed8b274bfdda8a17
https://doi.org/10.1109/irps.2015.7112722
https://doi.org/10.1109/irps.2015.7112722
Autor:
Ming-Dou Ker, Sheng-Fu Hsu
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 6:461-472
To accurately evaluate the immunity of CMOS ICs against transient-induced latch-up (TLU) under the system-level electrostatic discharge (ESD) test for electromagnetic compatibility (EMC) regulation, an efficient component-level TLU measurement setup
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97b776c1c83da19f35b24874aa4e4893
https://doi.org/10.1109/tdmr.2006.882203
https://doi.org/10.1109/tdmr.2006.882203
Autor:
Sheng-Fu Hsu, Ming-Dou Ker
Publikováno v:
IEEE Transactions on Electromagnetic Compatibility. 48:161-171
Different types of board-level noise filter networks are evaluated to find their effectiveness for improving the immunity of CMOS ICs against the transient-induced latchup (TLU) under the system-level electrostatic discharge (ESD) test. By choosing p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80f8094f30155a18ed29c80385880ed5
https://doi.org/10.1109/temc.2006.870681
https://doi.org/10.1109/temc.2006.870681