Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Sheng Ti Chung"'
Publikováno v:
Applied Surface Science Advances, Vol 24, Iss , Pp 100661- (2024)
This study successfully grew ꞵ-Ga2O3 epitaxial films on silicon carbide substrates by metalorganic chemical vapor deposition and fabricated vertical Schottky barrier diodes (SBDs), which were annealed in a high temperature furnace. The high surface
Externí odkaz:
https://doaj.org/article/3342eba122e74e9f936ae749b19bb002
Publikováno v:
ECS Journal of Solid State Science and Technology. 8:P457-P463
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67d3874c96a8ea5e10fb099ca5813632
https://doi.org/10.1149/2.0091909jss
https://doi.org/10.1149/2.0091909jss
Publikováno v:
ECS Journal of Solid State Science and Technology. 10:095002
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a7316eb6db50257e562e63d6e200065
https://doi.org/10.1149/2162-8777/ac2782
https://doi.org/10.1149/2162-8777/ac2782
Autor:
Ta-Chun Cho, Tien-Sheng Chao, Fu-Kuo Hsueh, Po-Jung Sung, Fu-Ju Hou, Sheng-Ti Chung, Yao-Jen Lee, Michael I. Current
Publikováno v:
IEEE Transactions on Electron Devices. 64:2054-2060
In this paper, one proposed an effective method to enhance current drivability of junctionless FETs (JL-FETs) by utilizing uniaxial tensile strain effects. The strained layers were deposited on JL-FETs on silicon-on-insulator (SOI) and bulk Si wafers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::642c50c851815658914b890d4f8ea4b1
https://doi.org/10.1109/ted.2017.2679766
https://doi.org/10.1109/ted.2017.2679766
Publikováno v:
IEEE Transactions on Nanotechnology. :1-1
In this study, an effective method was proposed to enhance the current drivability of junctionless field-effect transistors (JL-FETs) by utilizing ferroelectric effects. The ferroelectric layers were deposited on JL-FinFETs. The poly-Si junctionless
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5dd0978c2abc820f79d02f88a59dfc40
https://doi.org/10.1109/tnano.2020.2992797
https://doi.org/10.1109/tnano.2020.2992797
Publikováno v:
Optics letters. 38(24)
We experimentally and numerically investigate amplified spontaneous emission (ASE) in the presence of radiation reabsorption by using an end-pumped ruby laser. From the fluorescence time decay in the axial direction, we find that the average path len
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::750a70c7c98e2e93da355b174e1b85ca
https://pubmed.ncbi.nlm.nih.gov/24322246
https://pubmed.ncbi.nlm.nih.gov/24322246