Zobrazeno 1 - 10
of 2 233
pro vyhledávání: '"Sheng S. Li"'
Autor:
Sheng S. Li, Omar Manasreh, J. M. Howard, S. Easwaran, Timothy J. Anderson, Woo Kyoung Kim, Valentin Craciun, Oscar D. Crisalle, S. Yoon, Xuege Wang
Publikováno v:
Solar Energy Materials and Solar Cells. 90:2855-2866
Rapid thermal annealing (RTA), with fast ramp rate, was performed on several Cu(In,Ga)Se2 (CIGS) films and solar cells under various peak annealing temperatures and holding times. Characterizations were made on CIGS films and cells before and after R
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57cce9bbbcf959071bf44575fb195254
https://doi.org/10.1016/j.solmat.2006.04.011
https://doi.org/10.1016/j.solmat.2006.04.011
Autor:
Xuege Wang, Valentin Craciun, S. Rawal, Sheng S. Li, J.M. Howard, Timothy J. Anderson, C. H. Huang, Oscar D. Crisalle
Publikováno v:
Solar Energy Materials and Solar Cells. 88:65-73
Pulsed non-melt laser annealing (NLA) has been used for the first time to modify near-surface defects and related junction properties in Cu(In,Ga)Se2 (CIGS) solar cells. CIGS films deposited on Mo/glass substrates were annealed using a 25 ns pulsed 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b95a15f829d9b6fe172fbc6c8862a68c
https://doi.org/10.1016/j.solmat.2004.06.020
https://doi.org/10.1016/j.solmat.2004.06.020
Publikováno v:
Infrared Physics & Technology. 46:249-256
A two-stack multi-color quantum dot infrared photodetector (QDIP) for detection in the 8–12 μm spectral window was introduced. The top stack was made up of 8 periods of In0.5Ga0.5As/GaAs QDs, and the second stack consists of 8 periods of InAs/GaAs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7252a468359f793ed7b942474be05358
https://doi.org/10.1016/j.infrared.2004.04.003
https://doi.org/10.1016/j.infrared.2004.04.003
Autor:
William N. Shafarman, M. E. Beck, B. von Roedern, David L. Young, L. Chen, M. D. Gonzalez, B. J. Stanbery, Ingrid Repins, Xuege Wang, Alan E. Delahoy, D. Tarrant, V. K. Kapur, Sheng S. Li, Brian Keyes, Timothy J. Anderson, L. L. Kerr, Craig L. Perkins, Sally Asher, D. G. Jensen, Wyatt K. Metzger
Publikováno v:
Progress in Photovoltaics: Research and Applications. 14:25-43
We report the results of an extensive study employing numerous methods to characterize carrier transport within copper indium gallium sulfoselenide (CIGSS) photovoltaic devices, whose absorber layers were fabricated by diverse process methods in mult
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b68f3b5f70876eaffff237f7178dc42
https://doi.org/10.1002/pip.654
https://doi.org/10.1002/pip.654
Autor:
Rommel Noufi, Woo Kyoung Kim, L.L. Kerr, Sheng S. Li, Oscar D. Crisalle, Timothy J. Anderson, J. Abushama, Steve Johnston
Publikováno v:
Solid-State Electronics. 48:1579-1586
The performance of the chalcopyrite material Cu(In,Ga)Se 2 (CIGS) used as an absorber layer in thin-film photovoltaic devices is significantly affected by the presence of native defects. The deep-level transient spectroscopy (DLTS) technique is used
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::febbb8c761e298dfd380612c4b29e9c4
https://doi.org/10.1016/j.sse.2004.03.005
https://doi.org/10.1016/j.sse.2004.03.005
Publikováno v:
Solid-State Electronics. 48:73-79
Device modeling and simulation studies of a Cu(In1� x,Gax)Se2 (CIGS) thin film solar cell have been carried out. A variety of graded band-gap structures, including space charge region (SCR) grading, back surface region grading, and double grading o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16e1f8a2574a1b6169625e8c85ba1dbd
https://doi.org/10.1016/s0038-1101(03)00289-2
https://doi.org/10.1016/s0038-1101(03)00289-2
Autor:
Sheng S. Li, Yan-Kuin Su
The International Workshop on'Intersubband Transitions in Quantum Wells:: Physics and Applications,'was held at National Cheng Kung University, in Tainan, Taiwan, December 15-18, 1997. The objective of the Workshop is to facilitate the presentation a
Publikováno v:
Infrared Physics & Technology. 44:229-234
A high performance InGaAs/GaAs/AlGaAs superlattice-coupled quantum well infrared (IR) photodetector grown on the semi-insulating GaAs substrates by using molecular beam epitaxy has been developed for long wavelength IR detection. The dark current–v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d4317b9e6029b90b9133e251d6ae6e6
https://doi.org/10.1016/s1350-4495(02)00226-8
https://doi.org/10.1016/s1350-4495(02)00226-8
Publikováno v:
Infrared Physics & Technology. 44:235-241
In this paper we report a high performance two-stack, multi-color quantum well infrared photodetector (QWIP) composed of an InGaAs/AlGaAs QWIP and an InGaAs/AlGaAs/InGaAs triple-coupled (TC-) QWIP grown on the GaAs substrate for mid- and long-wavelen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7578a585e59a35df57bec5d2bc75158e
https://doi.org/10.1016/s1350-4495(02)00227-x
https://doi.org/10.1016/s1350-4495(02)00227-x