Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Sheng Kai Fan"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 108-113 (2021)
The ultra-high voltage (UHV) Lateral-diffused MOSFET (LDMOS) transistor has been widely used in power circuit applications and also used as an electrostatic discharge (ESD) self-protection device. However, the ESD ability of an UHV LDMOS is generally
Externí odkaz:
https://doaj.org/article/f24882c1daf84431a0039a0909b1c280
Publikováno v:
IEEE Electron Device Letters. 41:1673-1676
This study with the area-efficient design for improving electrostatic discharge (ESD) and Latch-up (LU) abilities in the ultra-high voltage (UHV) n-channel Lateral-Diffused MOSFET (nLDMOS) is investigated via a TSMC 0.5- $\mu \text{m}$ UHV Bipolar CM
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d00ad93480b684eadf1ddd240930613f
https://doi.org/10.1109/led.2020.3023021
https://doi.org/10.1109/led.2020.3023021
Publikováno v:
2021 IEEE International Future Energy Electronics Conference (IFEEC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c404165585d6a63ac61c5f5174e7a7f9
https://doi.org/10.1109/ifeec53238.2021.9661692
https://doi.org/10.1109/ifeec53238.2021.9661692
Autor:
Shi-Zhe Hong, Po-Lin Lin, Shen-Li Chen, Yu-Jie Zhou, Sheng-Kai Fan, Hung-Wei Chen, Tien-Yu Lan
Publikováno v:
ICCE-TW
In this paper, the ladder-step STI and ladder-step STI with parasitic silicon-controlled rectifiers (SCRs) of 0.5-μm circular ultra-high voltage n-channel laterally diffused MOSFETs (UHV nLDMOSs) were investigated to explore the ESD-capability influ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9f2cdb41abcc276801a259a281a1809
https://doi.org/10.1109/icce-taiwan49838.2020.9258042
https://doi.org/10.1109/icce-taiwan49838.2020.9258042
Publikováno v:
ICCE-TW
Using an embedded silicon-controlled rectifier (SCR) on the protection element was often used in the high-voltage electrostatic discharge (ESD) protection design. In this paper, a novel structure of embedded SCR on HV n-channel lateral diffused MOS (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::348cfbb37156d7284644b8a5cecdc5b6
https://doi.org/10.1109/icce-taiwan49838.2020.9258100
https://doi.org/10.1109/icce-taiwan49838.2020.9258100
Improving the ESD Robustness of an Ultra-high Voltage nLDMOS Device with the Embedded Schottky Diode
Publikováno v:
ICCE-TW
In this paper, ultra-high voltage (UHV) nLDMOS devices with drain-side embedded Schottky diode for improving ESD ability via TSMC $0.5-\mu\mathrm{m}$ 300-V BCD process has been proposed and verified. In order to improve the ESD ability without extra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::297c4670e486b08af80944243081cdf3
https://doi.org/10.1109/icce-taiwan49838.2020.9258045
https://doi.org/10.1109/icce-taiwan49838.2020.9258045
Publikováno v:
ICKII
The RESURF-region effect formed by the DPW layer and HVNW in an ultra-high voltage (UHV) LDMOS device on the electric field distribution and its ESD capability is investigated in this paper. After testing these DPW-layer partition samples of the UHV
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2b93eea0cf4014b071af97aded8b0a8
https://doi.org/10.1109/ickii50300.2020.9318840
https://doi.org/10.1109/ickii50300.2020.9318840
Autor:
Yu-Jie Zhou, Sheng-Kai Fan, Tien-Yu Lan, Hung-Wei Chen, Po-Lin Lin, Shi-Zhe Hong, Shen-Li Chen
Publikováno v:
ICKII
In this paper, circular nLDMOS devices of the ultra-high voltage (UHV) with drain-side super-junction (SJ) structures were formed in the drift region by using the HVPW and HVNW layers. The length of the SJ was adjusted by the length of the HVPW layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25d07db69406b5224fdfdee16b23ebc1
https://doi.org/10.1109/ickii50300.2020.9318923
https://doi.org/10.1109/ickii50300.2020.9318923
Publikováno v:
ICKII
The drain-side embedded horizontal-type Schottky diode modulations (contact number modulations) of high voltage (60V) nLDMOS components were investigated in this paper by using a 0.25-µm 60-V process. The HV components were tested by a transmission-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::edd0fb4e0a884a2764b4bddb3e8cc90e
https://doi.org/10.1109/ickii50300.2020.9318957
https://doi.org/10.1109/ickii50300.2020.9318957
Publikováno v:
GCCE
A heterojunction-Schottky diode has a low forward-voltage drop and a fast switching feature. Therefore, in this paper, the drain side heavily doped region was removed and equivalently added a heterojunction device in 60 V n/pLDMOS devices, and evalua
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3dc1fdcac4d2fb74771b991b9fec106c
https://doi.org/10.1109/gcce46687.2019.9015497
https://doi.org/10.1109/gcce46687.2019.9015497