Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Sheng Hsien Liu"'
Publikováno v:
IEEE Transactions on Electron Devices. 61:3179-3185
This paper examined the application of ion bombardment (IB) and NH 3 plasma treatment (PT) techniques in fabricating a high-performance Si 3 N 4 charge storage layer. The IB technique can be used for creating numerous additional trap sites in the sto
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3aeae78702bfcec6a665b55ca1477a14
https://doi.org/10.1109/ted.2014.2341629
https://doi.org/10.1109/ted.2014.2341629
Publikováno v:
Advanced Materials Research. 893:794-797
Multi-level-cell (MLC) operation of Cu-doped SiOx-based (SiOx:Cu-based) resistance random access memory (ReRAM) has been reported for the first time. For this study, we employed a novel ion bombardment-induced (IB-induced) SiOx:Cu switching layer (SL
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab16850ef3b159ecc7838ec289c0e825
https://doi.org/10.4028/www.scientific.net/amr.893.794
https://doi.org/10.4028/www.scientific.net/amr.893.794
Publikováno v:
IEEE Transactions on Electron Devices. 60:3393-3399
A novel ion bombardment (IB) technique is presented to fabricate and embed double-layer (DL) Ni nanocrystal (NC) in silicon nitride for TaN/Al2O3/Si3N4/SiO2/Si nonvolatile memory applications. In contrast to other methods of forming DL metal NC, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6a5ea9291a4bdf1bab3ab816bdf0fa2
https://doi.org/10.1109/ted.2013.2279156
https://doi.org/10.1109/ted.2013.2279156
Autor:
Wen Luh Yang, Yu-Ping Hsiao, Cheng-Lin Peng, Che-Chi Hsu, Yun-Chung Yang, Yu-Hsien Lin, Yuan Ming Chang, Sheng-Hsien Liu, Li-Min Lin, Chin-Hsuan Liao, Fun-Tat Chin
Publikováno v:
ECS Transactions. 53:223-228
The sol-gel derived technique has been proposed not only to tailor the microstructure of resistive layer but to control the amount of metal during device fabrication for resistive random access memory (ReRAM). Using the sol-gel derived technique can
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d1cccf95b47bcbfc315012fcd875d922
https://doi.org/10.1149/05303.0223ecst
https://doi.org/10.1149/05303.0223ecst
Autor:
Li-Min Lin, Wen Luh Yang, Chia-Hsiung Lin, Tien-Sheng Chao, Yuan Ming Chang, Fun-Tat Chin, Sheng-Hsien Liu
Publikováno v:
ECS Transactions. 41:469-473
In this paper, a novel chemical soak method is proposed to fabricate a Cu-doped SiO2 ReRAM device. This method can easily fabricate a lightly Cu-doped SiO2 film and effectively improve the reliability of the conventional Cu-doped SiO2 ReRAM device. A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9e71abff2e91da3643fd32565dc40df5
https://doi.org/10.1149/1.3633063
https://doi.org/10.1149/1.3633063
Publikováno v:
IEEE Electron Device Letters. 34:1388-1390
A novel ion bombardment (IB) technique is presented to dope a limited Cu source in an SiOx switching layer (SiOx:Cu SL) for nonvolatile memory applications. Compared with other Cu-doping methods, this IB technique has many benefits, including a local
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9de5435cfdf961a957d0ab4b71836a6a
https://doi.org/10.1109/led.2013.2280286
https://doi.org/10.1109/led.2013.2280286
Autor:
Wen Luh Yang, Po-Yang Wang, Tien-Sheng Chao, Chi-Chang Wu, Sheng-Hsien Liu, Ming-Jui Tsai, Yu-Yuan Su, Meng-Ru Ye
Publikováno v:
IEEE Electron Device Letters. 34:123-125
In this letter, high-performance polyimide (PI)-based resistive random access memory (ReRAM) is presented by utilizing a new DAXIN-PI thin film as a resistance layer. The switching between highand low-resistance states is triggered by the formation a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7befeb1737719cfd2fde082b97907bb2
https://doi.org/10.1109/led.2012.2224633
https://doi.org/10.1109/led.2012.2224633
Publikováno v:
IEEE Electron Device Letters. 33:1393-1395
A novel technique combination of ion bombardment (IB) and NH3 plasma treatment (PT) has been presented to yield a highly effective charge storage layer for Si/SiO2/Si3N4/SiO2/Si (SONOS)-type nonvolatile memory applications. The IB technique creates a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7b3070582bd807dbab728e6ff8bd33c
https://doi.org/10.1109/led.2012.2207699
https://doi.org/10.1109/led.2012.2207699
Publikováno v:
Nanoscale Research Letters
In this study, a high-performance Ti x Zr y Si z O flash memory is demonstrated using a sol–gel spin-coating method and formed under a low annealing temperature. The high-efficiency charge storage layer is formed by depositing a well-mixed solution
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1d50a785e7928626c295eefb53719977
https://doi.org/10.1186/1556-276x-8-340
https://doi.org/10.1186/1556-276x-8-340
Autor:
Sheng-hsien Liu, 劉聖賢
102
As the charge-trapping flash (CTF) memory is scaled down to 1x-nm generation, the lack of storage charges can cause serious reliability problems in high-package density condition, such as data retention, endurance, disturbance, etc. This mea
As the charge-trapping flash (CTF) memory is scaled down to 1x-nm generation, the lack of storage charges can cause serious reliability problems in high-package density condition, such as data retention, endurance, disturbance, etc. This mea
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/8wc696
