Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Sheng‐Kai Su"'
Autor:
Hsin‐Yuan Chiu, Tzu‐Ang Chao, Nathaniel S. Safron, Sheng‐Kai Su, San‐Lin Liew, Wei‐Sheng Yun, Po‐Sen Mao, Yu‐Tung Lin, Vincent Duen‐Huei Hou, Tung‐Ying Lee, Wen‐Hao Chang, Matthias Passlack, Hon‐Sum Philip Wong, Iuliana P. Radu, Han Wang, Gregory Pitner, Chao‐Hsin Chien
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 3, Pp n/a-n/a (2024)
Abstract Carbon nanotube (CNT) field effect transistors (CNFETs) show promise for the next generation VLSI systems due to their excellent scalability, energy efficiency, and speed. However, high leakage current is a drawback of large diameter CNTs (d
Externí odkaz:
https://doaj.org/article/262eb55fe9514f40947d0b2bde04564a
Autor:
Tzu‐Ang Chao, Chih‐Piao Chuu, San‐Lin Liew, I‐Fan Hu, Sheng‐Kai Su, Shengman Li, Shih‐Chu Lin, Vincent D.‐H. Hou, H.‐S. Philip Wong, Iuliana Radu, Wen‐Hao Chang, Gregory Pitner, Han Wang
Publikováno v:
Advanced Materials Interfaces, Vol 11, Iss 6, Pp n/a-n/a (2024)
Abstract Semiconducting single‐walled carbon nanotube (CNT) is a promising candidate as a channel material for advanced logic transistors, attributed to the ultra‐thin 1‐nm cylindrical geometry, high mobility, and high carrier injection velocit
Externí odkaz:
https://doaj.org/article/0fe972dcf6f249529d0f673eb7ad5042
Autor:
Sheng-Kai Su, 蘇聖凱
101
The rapid growth of communication technology with advances in technology, the technology advance of power line communication (PLC) has been from low speed to high speed transmission. Power line communications (PLC) uses the existing power li
The rapid growth of communication technology with advances in technology, the technology advance of power line communication (PLC) has been from low speed to high speed transmission. Power line communications (PLC) uses the existing power li
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/26470861468705839836
Autor:
Sheng-Kai Su, Alfonso Sanchez-Soares, Edward Chen, Thomas Kelly, Giorgos Fagas, James C. Greer, Gregory Pitner, H.-S. Philip Wong, Iuliana P. Radu
Publikováno v:
IEEE Electron Device Letters. 43:1367-1370
Carbon nanotube field effect transistors (CNFETs) have potential applications in future logic technology as they display good electrostatic control and excellent transport properties. However, contact resistance and leakage currents could limit scali
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9d337b49496839c747ce9213126ea106
https://doi.org/10.1109/led.2022.3185991
https://doi.org/10.1109/led.2022.3185991
Autor:
Qing Lin, Gregory Pitner, Carlo Gilardi, Sheng-Kai Su, Zichen Zhang, Edward Chen, Prabhakar Bandaru, Andrew Kummel, Han Wang, Matthias Passlack, Subhasish Mitra, H.-S. Philip Wong
Publikováno v:
IEEE Electron Device Letters. 43:490-493
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::def7a88052f10bc0710057073c700b8e
https://doi.org/10.1109/led.2022.3141692
https://doi.org/10.1109/led.2022.3141692
Autor:
Tsung-En Lee, Yuan-Chun Su, Bo-Jiun Lin, Yi-Xuan Chen, Wei-Sheng Yun, Po-Hsun Ho, Jer-Fu Wang, Sheng-Kai Su, Chen-Feng Hsu, Po-Sen Mao, Yu-Cheng Chang, Chao-Hsin Chien, Bo-Heng Liu, Chien-Ying Su, Chi-Chung Kei, Han Wang, H.-S. Philip Wong, T. Y. Lee, Wen-Hao Chang, Chao-Ching Cheng, Iuliana P. Radu
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c68493ea541d5bb68571fa91c9af6ac
https://doi.org/10.1109/iedm45625.2022.10019552
https://doi.org/10.1109/iedm45625.2022.10019552
Autor:
D. Mahaveer Sathaiya, Terry Y.T. Hung, Edward Chen, Wen-Chia Wu, Aslan Wei, Chih-Piao Chuu, Sheng-Kai Su, Ang Sheng Chou, Cheng-Ting Chung, Chao-Hsin Chien, Han Wang, Jin Cai, Chung-Cheng Wu, Iuliana P. Radu, Jeff Wu
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd8c8a16081e7d474f6cdbd58567ac66
https://doi.org/10.1109/iedm45625.2022.10019446
https://doi.org/10.1109/iedm45625.2022.10019446
Autor:
Terry Y.T. Hung, Meng-Zhan Li, Wei Sheng Yun, Sui An Chou, Sheng-Kai Su, Edward Chen, San Lin Liew, Ying-Mei Yang, Kuang-I Lin, Vincent Hou, T.Y. Lee, Han Wang, Albert Cheng, Minn-Tsong Lin, H.-S. Philip Wong, Iuliana P. Radu
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06b2730c1c45d09513aec3a887beb2b3
https://doi.org/10.1109/iedm45625.2022.10019321
https://doi.org/10.1109/iedm45625.2022.10019321
First Demonstration of GAA Monolayer-MoS2 Nanosheet nFET with 410μA μ m ID 1V VD at 40nm gate length
Autor:
Yun-Yan Chung, Bo-Jhih Chou, Chen-Feng Hsu, Wei-Sheng Yun, Ming-Yang Li, Sheng-Kai Su, Yu-Tsung Liao, Meng-Chien Lee, Guo-Wei Huang, San-Lin Liew, Yun-Yang Shen, Wen-Hao Chang, Chien-Wei Chen, Chi-Chung Kei, Han Wang, H.-S. Philip Wong, T. Y. Lee, Chao-Hsin Chien, Chao-Ching Cheng, Iuliana P. Radu
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8daad73d43b097ab7bd8fcdd9a8ca4bd
https://doi.org/10.1109/iedm45625.2022.10019563
https://doi.org/10.1109/iedm45625.2022.10019563