Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Sheng‐Han Yi"'
Autor:
Chun‐Ho Chuang, Ting‐Yun Wang, Chun‐Yi Chou, Sheng‐Han Yi, Yu‐Sen Jiang, Jing‐Jong Shyue, Miin‐Jang Chen
Publikováno v:
Advanced Science, Vol 10, Iss 32, Pp n/a-n/a (2023)
Abstract Atomic layer engineering is investigated to tailor the morphotropic phase boundary (MPB) between antiferroelectric, ferroelectric, and paraelectric phases. By increasing the HfO2 seeding layer with only 2 monolayers, the overlying ZrO2 layer
Externí odkaz:
https://doaj.org/article/4a9d880dba7a4de183fca65742d111e4
Autor:
Chun-Yuan Wang, Chin-I Wang, Sheng-Han Yi, Teng-Jan Chang, Chun-Yi Chou, Yu-Tung Yin, Makoto Shiojiri, Miin-Jang Chen
Publikováno v:
Materials & Design, Vol 195, Iss , Pp 109020- (2020)
Based on the engineering of the TiN capping layer, the tailoring of the crystalline phases and the paraelectric(PE)/antiferroelectric(AFE)/ferroelectric(FE) properties of nanoscale ZrO2 thin films are demonstrated without any post-annealing treatment
Externí odkaz:
https://doaj.org/article/a90ae222d9c743a0a47c750d29acf5cf
Autor:
Yu-Sen Jiang, Kuei-Wen Huang, Sheng-Han Yi, Chin-I Wang, Teng-Jan Chang, Wei-Chung Kao, Chun-Yuan Wang, Yu-Tung Yin, Jay Shieh, Miin-Jang Chen
Publikováno v:
Journal of the European Ceramic Society. 42:6997-7003
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8afcbf05e77d80b1493353f3703b2f8
https://doi.org/10.1016/j.jeurceramsoc.2022.07.031
https://doi.org/10.1016/j.jeurceramsoc.2022.07.031
Autor:
Chun-Yuan Wang, Chun-Yi Chou, Yu-Tung Yin, Hsin-Chih Lin, Miin-Jang Chen, Teng-Jan Chang, Sheng-Han Yi, Chin-I Wang
Publikováno v:
ACS Applied Electronic Materials. 3:1937-1946
Tailoring of crystalline phases and dielectric properties of ZrO2 thin films are demonstrated by capping a nanoscale TiN layer prepared by plasma-enhanced atomic layer deposition. The in-plane tens...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cba3ff56e5fa16a71654530839e468d3
https://doi.org/10.1021/acsaelm.1c00161
https://doi.org/10.1021/acsaelm.1c00161
Publikováno v:
Journal of Materials Chemistry A. 9:9081-9091
Antiferroelectric (AFE) HfO2/ZrO2-based thin films have recently emerged as a potential candidate for high-performance energy storage capacitors in miniaturized power electronics. However, the materials suffer from the issues of the trade-off between
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f3ec024768abc63f6577ab10c49207b
https://doi.org/10.1039/d0ta11991a
https://doi.org/10.1039/d0ta11991a
Publikováno v:
Journal of Materials Chemistry C. 8:3669-3677
In recent years, Hf/ZrO2-based thin films have emerged as promising candidates for ferroelectric materials in various applications. However, achieving ferroelectricity with a low-temperature process has remained a challenging task. In this study, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07a4ea159321630439ac49cf2514c9ea
https://doi.org/10.1039/c9tc04801d
https://doi.org/10.1039/c9tc04801d
Publikováno v:
Journal of the European Ceramic Society. 39:4038-4045
In this study, tailoring the microstructures and ferroelectric(FE)/antiferroelectric(AFE) properties of nanoscale ZrO2 thin films is demonstrated with an intentional introduction of sub-nanometre interfacial layers. The ferroelectricity of ZrO2 thin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67927078e633ddec56852f93c71d3932
https://doi.org/10.1016/j.jeurceramsoc.2019.05.065
https://doi.org/10.1016/j.jeurceramsoc.2019.05.065
Autor:
Sheng-Han Yi, Chin-I Wang, Miin-Jang Chen, Teng-Jan Chang, Wei-Hao Lee, Yu-Tung Yin, Hsin-Chih Lin
Publikováno v:
ACS Applied Electronic Materials. 1:1091-1098
Because the dielectric constant (K), the leakage current density (Jg), and the interfacial state density (Dit) are critical to high-K gate dielectrics, the layer-by-layer, in situ atomic layer bomb...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ce8883380b54823d2cf9fc8cc7f321b
https://doi.org/10.1021/acsaelm.9b00080
https://doi.org/10.1021/acsaelm.9b00080
Publikováno v:
RSC Advances. 9:12226-12231
AlN thin films were epitaxially grown on a 4H-SiC substrate via atomic layer deposition (ALD) along with atomic layer annealing (ALA). By applying the layer-by-layer, in situ ALA treatment using helium/argon plasma in each ALD cycle, the as-deposited
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbab60ef322473ea295951f9a5e371ca
https://doi.org/10.1039/c9ra00008a
https://doi.org/10.1039/c9ra00008a
Publikováno v:
Nano Energy. 99:107342
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d19f6996fa9f1237e319787d68aeb5e
https://doi.org/10.1016/j.nanoen.2022.107342
https://doi.org/10.1016/j.nanoen.2022.107342