Zobrazeno 1 - 10
of 110
pro vyhledávání: '"Sheng‐Chi Chen"'
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 11, Pp n/a-n/a (2024)
Abstract The escalating interest in 2D nanoflakes‐based group‐IVA metal chalcogenides is attributed to their noteworthy properties, such as high electron mobility, exceptional chemical stability, and applicability across diverse scientific discip
Externí odkaz:
https://doaj.org/article/4579289e4d0d4fcab74c125b327e4fc0
Autor:
Tung-Han Chuang, Yin-Hung Chen, Shikha Sakalley, Wei-Chun Cheng, Choon Kit Chan, Chih-Ping Chen, Sheng-Chi Chen
Publikováno v:
Nanomaterials, Vol 13, Iss 8, p 1363 (2023)
Solar light is a renewable source of energy that can be used and transformed into electricity using clean energy technology. In this study, we used direct current magnetron sputtering (DCMS) to sputter p-type cuprous oxide (Cu2O) films with different
Externí odkaz:
https://doaj.org/article/43c7f6a46b684362a8b436e06c0d5728
Autor:
Yin-Hung Chen, Pei-Ing Lee, Shikha Sakalley, Chao-Kuang Wen, Wei-Chun Cheng, Hui Sun, Sheng-Chi Chen
Publikováno v:
Nanomaterials, Vol 12, Iss 16, p 2814 (2022)
High Power Impulse Magnetron Sputtering (HiPIMS) has generated a great deal of interest by offering significant advantages such as high target ionization rate, high plasma density, and the smooth surface of the sputtered films. This study discusses t
Externí odkaz:
https://doaj.org/article/ac314d6ed6234e8fb469b533824ca72c
Autor:
Hui Sun, Zhi-Yue Li, Sheng-Chi Chen, Ming-Han Liao, Jian-Hong Gong, Zhamatuofu Bai, Wan-Xia Wang
Publikováno v:
Nanomaterials, Vol 11, Iss 8, p 2016 (2021)
In-Sn-Zn oxide (ITZO) nanocomposite films have been investigated extensively as a potential material in thin-film transistors due to their good electrical properties. In this work, ITZO thin films were deposited on glass substrates by high-power impu
Externí odkaz:
https://doaj.org/article/7015d0ef67224e3a94ada2d5106cee6d
Publikováno v:
Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-6 (2017)
Abstract Amorphous Si (a-Si) films with metal silicide are expected to enhance the absorption ability of pure a-Si films. In this present study, NiSi (20 nm)/Si (40 nm) and AlSi (20 nm)/Si (40 nm) bilayer thin films are deposited through radio freque
Externí odkaz:
https://doaj.org/article/324e92b4a31d4ef9a35847c2ad38e584
Autor:
Sheng-Chi Chen, 陳勝崎
103
The electrochemical effects of LiNi0.8Co0.2O2 cathode material with the electrolyte additives (biphenyl and thiophene) had been studied. The LiNi0.8Co0.2O2 was synthesized by co-precipitation method and measured the physical properties by sc
The electrochemical effects of LiNi0.8Co0.2O2 cathode material with the electrolyte additives (biphenyl and thiophene) had been studied. The LiNi0.8Co0.2O2 was synthesized by co-precipitation method and measured the physical properties by sc
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/34955719770669720570
Autor:
Sheng-Chi Chen, 陳勝祺
102
This study developed an electric vehicle that has two front wheels and one rear wheel. The vehicle is steered by controlling the steering angle of the rear wheel and the angular velocities of the two front wheels. Each of the two front wheel
This study developed an electric vehicle that has two front wheels and one rear wheel. The vehicle is steered by controlling the steering angle of the rear wheel and the angular velocities of the two front wheels. Each of the two front wheel
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/60938806421117291799
Autor:
Sheng-Chi Chen, 陳翔祺
97
This thesis describes the RF front-end receiver for Ka-Band applications which are implemented in WIN 0.15-μm pHEMT and TSMC 0.18-μm CMOS technologies. The implemented circuits include Ka-Band CPW LNA, Ku-Band gm-boosted Colpitts VCO, Ku-Ba
This thesis describes the RF front-end receiver for Ka-Band applications which are implemented in WIN 0.15-μm pHEMT and TSMC 0.18-μm CMOS technologies. The implemented circuits include Ka-Band CPW LNA, Ku-Band gm-boosted Colpitts VCO, Ku-Ba
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/65264016934152297153
Autor:
Sheng-Chi Chen, 陳聖錡
96
In recently years, nanocrystals have been widely applied to overcome the issues of operation and reliability for conventional floating gate memories. The expected electrical characteristics of memory devices are good endurance, long retention
In recently years, nanocrystals have been widely applied to overcome the issues of operation and reliability for conventional floating gate memories. The expected electrical characteristics of memory devices are good endurance, long retention
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/39759918595689597028
Autor:
Sheng-chi Chen, 陳聖奇
95
Baculovirus expression vectors system （BEVS）that based on Autograph californica nucleopolyhedrovirus （AcMNPV） exten¬sively used for protein expression in recent years. Comparing with traditional Prokaryotic （ex. E. coli） and Euka
Baculovirus expression vectors system （BEVS）that based on Autograph californica nucleopolyhedrovirus （AcMNPV） exten¬sively used for protein expression in recent years. Comparing with traditional Prokaryotic （ex. E. coli） and Euka
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/18550541510301812795