Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Sheng, De Chen"'
Publikováno v:
Proceedings of the National Academy of Sciences of the United States of America, 1990 Jun 01. 87(12), 4449-4452.
Externí odkaz:
https://www.jstor.org/stable/2354337
Publikováno v:
Scientific Reports
Achondroplasia (ACH), the most common genetic dwarfism in human, is caused by a gain-of function mutation in fibroblast growth factor receptor 3 (FGFR3). Currently, there is no effective treatment for ACH. The development of an appropriate human-rele
Autor:
Wen-Ching Wang, Lily Hui-Ching Wang, Shin-Yi Du, Hung-Jung Wang, Sheng-De Chen, Hsin-Hung Cheng
Publikováno v:
Journal of microbiology, immunology, and infection = Wei mian yu gan ran za zhi. 49(5)
Background/Purpose Helicobacter pylori colonizes the human stomach and contributes to chronic inflammation of the gastric mucosa. H. pylori persistence occurs because of insufficient eradication by phagocytic cells. A key factor of H. pylori , choles
Autor:
Sheng-De Chen, 陳昇德
98
This study established the numerical model of Shi-Shui-Keng landslides (S-S-K landslides) using TALREN-4 numerical tool according to the field investigations and the in-situ monitoring such as the geological boring data, the instrumentations
This study established the numerical model of Shi-Shui-Keng landslides (S-S-K landslides) using TALREN-4 numerical tool according to the field investigations and the in-situ monitoring such as the geological boring data, the instrumentations
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/89683858498560389213
Publikováno v:
Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials.
Autor:
Sheng-De Chen, 陳顯德
88
The as-deposited a-Si:D TFT with inverted staggered structure has been fabricated successfully and the stability of the as-deposited a-Si:H and as-deposited a-Si:D TFTs under different bias stress conditions were tested. It is demonstrated th
The as-deposited a-Si:D TFT with inverted staggered structure has been fabricated successfully and the stability of the as-deposited a-Si:H and as-deposited a-Si:D TFTs under different bias stress conditions were tested. It is demonstrated th
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/09718813582744810256