Zobrazeno 1 - 10
of 73
pro vyhledávání: '"Shen-Yang Lee"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 236-241 (2021)
This study investigates a device’s ability to boost its on-state current and subthreshold behavior using a ferroelectric field-effect transistor (FeFET) with an ultrathin sub-5-nm Hf1-xZrxO2 (HZO). A conventional field-effect transistor (FET) with
Externí odkaz:
https://doaj.org/article/5ac82faab6e2474280122c96baced3f7
Autor:
Tsung-Yu Tsai, Hao Chien, Feng-Chun Tsai, Heng-Chih Pan, Huang-Yu Yang, Shen-Yang Lee, Hsiang-Hao Hsu, Ji-Tseng Fang, Chih-Wei Yang, Yung-Chang Chen
Publikováno v:
Journal of the Formosan Medical Association, Vol 116, Iss 11, Pp 844-851 (2017)
Background/Purpose: Acute kidney injury (AKI) developing during extracorporeal membrane oxygenation (ECMO) is associated with very poor outcome. The Kidney Disease: Improving Global Outcomes (KDIGO) group published a new AKI definition in 2012. This
Externí odkaz:
https://doaj.org/article/e9597f391f6d45c4a35db0a6bdb32683
Autor:
Yueh-An Lu, Shen-Yang Lee, Hui-Yi Lin, Yen-Chun Liu, Huang-Kai Kao, Yung-Chang Chen, Ya-Chung Tian, Cheng-Chieh Hung, Chih-Wei Yang, Hsiang-Hao Hsu
Publikováno v:
Biomedical Journal, Vol 38, Iss 6, Pp 531-537 (2015)
Background: Reconsidering when to initiate renal replacement therapy (RRT) in patients with chronic kidney disease (CKD) has been emphasized recently. With evolving modern aged and diabetes-prone populations, conventional markers of uremia are not su
Externí odkaz:
https://doaj.org/article/34f569d634ed4f8aa115e61a9aadf596
Publikováno v:
PLoS ONE, Vol 7, Iss 11, p e48481 (2012)
BACKGROUND: Renal transplant patients often have severe bone and mineral deficiencies. While the clinical effects of immunosuppressive agents like calcineurin inhibitors (CIs) and sirolimus on bone turnover are unclear, bisphosphonates are effective
Externí odkaz:
https://doaj.org/article/635cc462dbbe4b428657a5b2f3267e68
Autor:
Shen-Yang Lee, 李沈洋
92
A2A adenosine receptors (A2A-R) are located in many different areas of the brain and have been implicated in modulating neuronal functions. By using the C terminus domain of A2A-R as the bait in the yeast two-hybrid system, my colleagues prev
A2A adenosine receptors (A2A-R) are located in many different areas of the brain and have been implicated in modulating neuronal functions. By using the C terminus domain of A2A-R as the bait in the yeast two-hybrid system, my colleagues prev
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/81138929585587383034
Publikováno v:
IEEE Transactions on Electron Devices. 68:879-884
A low-cost fabrication process of Hf $_{{1}-{x}}$ Zr x O2 (HZO) nonvolatile memory (NVM) was proposed and its characteristics were investigated. We successfully fabricated a ferroelectric tunnel junction (FTJ) device with tunable conductance for neur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb72b776e032e50c12a17bd0e3d21bf4
https://doi.org/10.1109/ted.2020.3045955
https://doi.org/10.1109/ted.2020.3045955
Publikováno v:
IEEE Journal of the Electron Devices Society. 9:236-241
This study investigates a device’s ability to boost its on-state current and subthreshold behavior using a ferroelectric field-effect transistor (FeFET) with an ultrathin sub-5-nm Hf1- x Zr x O2 (HZO). A conventional field-effect transistor (FET) w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3cf349de96314b4a01bf5237ead5a43
https://doi.org/10.1109/jeds.2021.3056438
https://doi.org/10.1109/jeds.2021.3056438
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 236-241 (2021)
This study investigates a device’s ability to boost its on-state current and subthreshold behavior using a ferroelectric field-effect transistor (FeFET) with an ultrathin sub-5-nm Hf1-xZrxO2 (HZO). A conventional field-effect transistor (FET) with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doajarticles::03a34942ce143b28a0929b624f713e46
https://ieeexplore.ieee.org/document/9344700/
https://ieeexplore.ieee.org/document/9344700/
Autor:
Yu-En Huang, Chiuan-Huei Shen, Tien-Sheng Chao, Chun-Chih Chung, Shen-Yang Lee, Hsin-Yu Chen, Po-Yi Kuo, Han-Wei Chen
Publikováno v:
IEEE Transactions on Electron Devices. 67:711-716
In this article, we successfully fabricated nanowire (NW) negative capacitance (NC)-related ferroelectric FETs (FE-FETs) with two structures: trigate (TG) and gate-all-around (GAA). Planar capacitors with a metal–FE–metal (MFM) structure were inv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b3d7fd94baf7d3071ea51bf4e5f72ec
https://doi.org/10.1109/ted.2019.2958350
https://doi.org/10.1109/ted.2019.2958350
Publikováno v:
IEEE Transactions on Nanotechnology. 19:322-327
In this article, poly-Si gate-all-around (GAA) field effect transistors (FETs) using sidewall damascene method are successfully demonstrated. By manipulating the stress which is imposed by nitride layer, the crystallinity of poly-Si channels can be m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9294c127e8afda6381da2a174c4325f7
https://doi.org/10.1109/tnano.2020.2981394
https://doi.org/10.1109/tnano.2020.2981394