Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Shen-Ming Luo"'
Autor:
Shen-Ming Luo, Cai-Jia Tsai, Ming-Jhe Li, Ting-Hsuan Chang, Jiun-Hung Lin, Yan-Shiuan Chang, William Cheng-Yu Ma, Po-Jen Chen, Jhe-Wei Jhu
Publikováno v:
IEEE Transactions on Plasma Science. 49:26-32
The impacts of ammonia gas (NH3) plasma treatment on the performance and positive gate bias stress (PGBS) of polycrystalline-silicon (poly-Si) junctionless thin-film transistor (JL-TFT) are studied. A −0.785-V threshold voltage ( $V_{\mathrm {TH}}$
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e03bd537feb3add10017e48933782362
https://doi.org/10.1109/tps.2020.3010483
https://doi.org/10.1109/tps.2020.3010483
Autor:
Shen-Ming Luo, William Cheng-Yu Ma
Publikováno v:
IEEE Transactions on Electron Devices. 67:5243-5246
Hot-carrier stress (HCS) characteristics of polycrystalline-silicon (poly-Si) tunnel field-effect thin-film transistors are investigated and compared with the conventional poly-Si thin-film transistors (TFTs). After HCS with ${V}_{{\text {DS}}} = {2}
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a6f5a8d93a6474558036e9ff4126065
https://doi.org/10.1109/ted.2020.3025741
https://doi.org/10.1109/ted.2020.3025741
Publikováno v:
Thin Solid Films. 697:137818
In this work, the polycrystalline-silicon (poly-Si) tunnel field-effect thin-film transistors (TFETs) with TiN/HfZrO2 gate stack materials are demonstrated to exhibit low threshold voltage ~ –1.218 V, subthreshold swing (SS) ~ 0.311 V/decade and ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85339ca3f31ee69d1a29ff2726036884
https://doi.org/10.1016/j.tsf.2020.137818
https://doi.org/10.1016/j.tsf.2020.137818