Zobrazeno 1 - 10
of 205
pro vyhledávání: '"Shen-Li Fu"'
Publikováno v:
Active and Passive Electronic Components, Vol 9, Iss 1, Pp 25-29 (1981)
Externí odkaz:
https://doaj.org/article/e98d194c0fec4eb2bcf32249bdfdd4da
Publikováno v:
Active and Passive Electronic Components, Vol 7, Iss 1-3, Pp 63-67 (1980)
Externí odkaz:
https://doaj.org/article/1e1737c823e0451bab574eea4cbe89ad
Autor:
Shen-Li Fu, Gung-Fun Chen
Publikováno v:
Active and Passive Electronic Components, Vol 12, Iss 4, Pp 281-290 (1987)
The preparation and properties of the Pb(Fe2/3W1/3)x(Fe1/2Nb1/2)0.86–xTi0.14O3-based thick film dielectrics are described. The Calcined Pb(Fe2/3W1/3)O3 powder, instead of glass frit, is used as the flux agent to promote densification during the fir
Externí odkaz:
https://doaj.org/article/045182bd11e54ae8b7dccf9afece503d
Publikováno v:
Innovations in Education and Teaching International. 56:66-76
Knowledge associated with energy conservation is important but it may appear difficult and monotonous to students due to the presence of jargon and complex scientific concepts. This research created two digital question-and-answer games and compared
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c493a35f657d22608d63061184cacfc
https://doi.org/10.1080/14703297.2017.1348960
https://doi.org/10.1080/14703297.2017.1348960
Publikováno v:
Nanoscience and Nanotechnology Letters. 7:974-979
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::088d48e708bd8e16738a300bca7927b9
https://doi.org/10.1166/nnl.2015.2089
https://doi.org/10.1166/nnl.2015.2089
Publikováno v:
Microelectronics Reliability. 55:1248-1255
A passive interposer, which is a way to bridge the feature gap between the integrated circuit (IC) and the package substrate, is a key building block for high performance 3-D systems. In this paper, polyimide (PI) is proposed as an alternative to gla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::172c94b66d8404d3c885980d4d1b619f
https://doi.org/10.1016/j.microrel.2015.05.017
https://doi.org/10.1016/j.microrel.2015.05.017
Publikováno v:
2017 International Conference on Electronics Packaging (ICEP).
This work includes design of microwave plasma source, ICP chamber, laser scribing trials, development of the water soluble mask material and DRIE process. Electron cyclotron resonance (ECR) plasma sources are used for a variety of materials processin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9197d05cb85067405bbaa83e950c569f
https://doi.org/10.23919/icep.2017.7939342
https://doi.org/10.23919/icep.2017.7939342
Publikováno v:
Electronic Materials Letters. 10:497-502
In this paper, thermal analysis of the heat dissipation under different heat sink for high-power white Light Emitting Diode (LED) is presented. Junction temperature of LED is elevated as the power of LED increases, which brings up deterioration of li
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6077b566807585f752bd680d9b303fa5
https://doi.org/10.1007/s13391-014-8003-9
https://doi.org/10.1007/s13391-014-8003-9
Publikováno v:
Journal of Materials Science: Materials in Electronics. 25:596-603
The performance and productivity of microelectronics has increased continuously over more than four decades due to enormous advances in photolithography, wafer size, process technology, and devices. Historically, electrical overstress (EOS) has been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::483b719bd1c2e3da9f3af2c975488fa9
https://doi.org/10.1007/s10854-013-1521-7
https://doi.org/10.1007/s10854-013-1521-7
Publikováno v:
Key Engineering Materials. 573:1-7
In this paper, micro interfacial behavior for Sn3.5Ag0.5Cu (SAC305) lead-free solder on Cu-Ni-Au substrate has been carefully investigated. It is observed that the intermetallic compound (IMC) ingredients along the SAC305 solder on the Cu-Ni-Ag subst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::231ee3de23ef7abd9e36529886cdc403
https://doi.org/10.4028/www.scientific.net/kem.573.1
https://doi.org/10.4028/www.scientific.net/kem.573.1