Zobrazeno 1 - 10
of 90
pro vyhledávání: '"Shen-Jie Wang"'
Autor:
SHEN Jie, WANG Jiangli, WANG Zezhou, MO Miao, ZHOU Changming, YUAN Jing, XU Dazhi, ZHENG Ying
Publikováno v:
Zhongguo aizheng zazhi, Vol 34, Iss 3, Pp 268-277 (2024)
Background and purpose: Follow-up data of 6 737 patients undergoing surgery for gastric cancer were collected based on hospital registration, and the 1-, 3- and 5-years observed overall survival (OS) rates and disease-free survival (DFS) rates were a
Externí odkaz:
https://doaj.org/article/1c046830ff8c45c6a526da3f8177b909
Publikováno v:
Zhongguo aizheng zazhi, Vol 31, Iss 1, Pp 11-19 (2021)
Background and purpose: Metastasis remains the cause of 90% of death from cancer. By analyzing the distribution of metastatic sites and survival status of 20 000 metastatic cancer patients from a hospital-based cancer registry database, this study pr
Externí odkaz:
https://doaj.org/article/ee1497db244b4046ae3819aff29855c3
Autor:
Nola Li, Ian T. Ferguson, Shen-Jie Wang, Zhe Chuan Feng, Jer-Ren Yang, Hung-Lin Tsai, Eun-Hyun Park
Publikováno v:
Journal of Crystal Growth. 311:4628-4631
Sapphire and SiC are typical substrates used for GaN growth. However, they are non-native substrates and result in highly defective materials. The use of ZnO substrates can result in perfect lattice-matched conditions for 22% indium InGaN layers, whi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ed1de720693c57dff91bb7dbd1a5894
https://doi.org/10.1016/j.jcrysgro.2009.09.004
https://doi.org/10.1016/j.jcrysgro.2009.09.004
Autor:
Hongbo Yu, Nola Li, Ian T. Ferguson, Christopher J. Summers, Andrew Melton, Shen-Jie Wang, William E. Fenwick, Tianming Xu, Muhammad Jamil
Publikováno v:
Journal of Crystal Growth. 311:4306-4310
GaN thin films have been grown on Si(1 1 1) substrates using an atomic layer deposition (ALD)-grown Al2O3 interlayer. This thin Al2O3 layer reduces strain in the subsequent GaN layer, leading to lower defect densities and improved material quality co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7875b1afd2bdd32588e97d15322c8eca
https://doi.org/10.1016/j.jcrysgro.2009.07.022
https://doi.org/10.1016/j.jcrysgro.2009.07.022
Effect of an Al2O3 transition layer on InGaN on ZnO substrates by organometallic vapor-phase epitaxy
Autor:
Jeff Nause, Zhe Chuan Feng, Christopher J. Summers, Nola Li, Ian T. Ferguson, Shen-Jie Wang, Adriana Valencia, C. Y. Huang
Publikováno v:
Journal of Crystal Growth. 310:4908-4912
InGaN was grown on bare ZnO as well as Al 2 O 3 deposited ZnO substrates by organometallic vapor-phase epitaxy (OMVPE). The Al 2 O 3 transition layer was grown by atomic layer deposition (ALD) in order to prevent Zn and O diffusion from the ZnO subst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d91cafce5d5897cc261977da8f6298f0
https://doi.org/10.1016/j.jcrysgro.2008.07.087
https://doi.org/10.1016/j.jcrysgro.2008.07.087
Autor:
Benjamin Klein, Nola Li, Ian T. Ferguson, Shen-Jie Wang, Andrew Melton, William E. Fenwick, Hongbo Yu
Publikováno v:
Journal of Crystal Growth. 310:4904-4907
AlGaN/GaN superlattice structures have been deposited on (0 0 0 1) ZnO substrates by metalorganic vapor phase epitaxy. The growth conditions were first optimized on GaN templates using N 2 as carrier gas at relatively low temperature (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d3d3b2b61ba667469e086fd9067bf05
https://doi.org/10.1016/j.jcrysgro.2008.07.071
https://doi.org/10.1016/j.jcrysgro.2008.07.071
Autor:
Adriana Valencia, C. J. Summers, Shen-Jie Wang, Jeff Nause, Matthew H. Kane, Eun-Hyun Park, Zhe Chuan Feng, Nola Li, Ian T. Ferguson
Publikováno v:
physica status solidi c. 5:1736-1739
The metalorganic chemical vapor deposition (MOCVD) growth of GaN based materials on ZnO substrates has numerous technical issues that need to be investigated and resolved. These include the thermal stability of ZnO, out-diffusion of Zn/O from the ZnO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0de09ef5e74b7606235cf6ccb180d2b9
https://doi.org/10.1002/pssc.200778614
https://doi.org/10.1002/pssc.200778614
Autor:
Adriana Valencia, Christoper Summers, Shen-Jie Wang, Jeff Nause, Ian T. Ferguson, Hung-Lin Tsai, Eun-Hyun Park, Jer-Ren Yang, Nola Li, Zhe Chuan Feng
Publikováno v:
Journal of Light & Visual Environment. 32:143-147
MOCVD growth of InGaN on ZnO substrates has achieved indium concentration as high as 43% as observed by high-resolution X-ray diffraction (HRXRD). The uniqueness of this finding is the absence of phase separation and the higher indium incorporation c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8bd46ca5a423d3891118bd342068015b
https://doi.org/10.2150/jlve.32.143
https://doi.org/10.2150/jlve.32.143
Autor:
Shen-Jie Wang, Adriana Valencia, C. J. Summers, Tianming Xu, Jeff Nause, William E. Fenwick, Andrew Melton, Muhammad Jamil, Hongbo Yu, Nola Li, Ian T. Ferguson
Publikováno v:
SPIE Proceedings.
Al 2 O 3 layers have been deposited by atomic layer deposition (ALD) on both silicon and zinc oxide (ZnO) substrates as a transition layer for MOCVD growth of GaN. These Al2O3 layers have been shown to reduce tensile strain and cracking in GaN thin f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90df7afad4c58681c8d9619e22ad09bc
https://doi.org/10.1117/12.815324
https://doi.org/10.1117/12.815324
Autor:
Zhe Chuan Feng, Shen-Jie Wang, Andrew Melton, Nola Li, Ian T. Ferguson, Muhammad Jamil, C. Y. Huang, William E. Fenwick, Christopher J. Summers
Publikováno v:
MRS Proceedings. 1201
GaN and InGaN layers were grown on annealed 20 and 50nm Al2O3/ZnO substrates by metalorganic chemical vapor deposition (MOCVD). GaN was only observed by high resolution x-ray diffraction (HRXRD) on 20 nm Al2O3/ZnO substrates. Room temperature photolu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4cf53d4f2f1aceff5acf2794dc912720
https://doi.org/10.1557/proc-1201-h06-02
https://doi.org/10.1557/proc-1201-h06-02