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Publikováno v:
Chinese Physics Letters. 23:1310-1313
Atomic force microscopy (AFM) and power-dependent micro-photoluminescence (μ-PL) spectroscopy are used to study the structure and exciton energy states in InAs quantum dots (QDs) grown on an In0.35Ga0.65As template on GaAs (311)B. The In0.35Ga0.65As
Publikováno v:
Journal of Applied Physics; 7/15/1993, Vol. 74 Issue 2, p1421, 5p, 1 Diagram, 4 Graphs
Publikováno v:
Chinese Physics Letters. 22:682-685
The reentrant spin glass behaviour was observed in half doping (La,Pr)1/2Ca1/2MnO3 manganites with a CE-type antiferromagnetic structure. It shows sequential multiple magnetic transitions from the paramagnetic to the ferromagnetic, antiferromagnetic,
Publikováno v:
Journal of Applied Physics; 6/1/2003, Vol. 93 Issue 11, p9401, 3p, 4 Graphs
Publikováno v:
Acta Physica Sinica (Overseas Edition). 4:757-765
In this paper the nucleation and growth processes of GaAs(001) molecular-beam epitaxy were studied by Monte Carlo simulation. The density of islands and the density of isolated Ga adatoms were obtained for different growth temperatures, and the islan
Publikováno v:
Acta Physica Sinica (Overseas Edition). 3:453-459
We report the far-infrared photoconductivity spectroscopy (FIRPCS) of the high purity n-GaAs grown by molecular beam epitaxial (MBE) technique. The current-voltage (I-V) measurement and FIRPCS under different electric field strength have been perform
Publikováno v:
Acta Physica Sinica (Overseas Edition). 2:213-219
Publikováno v:
Synthetic Metals. 41:543-546
The behaviour of doped impurity in poly (3-methyl thiophene) - P3MT has been studied by Raman, photoluminescence (PL) and photoreflectance (PR) spectroscopies. It is experimentally demonstrated that the behaviour of doped impurity in conducting polym
Publikováno v:
Journal of Physics and Chemistry of Solids. 57:643-645
An empirical relation between the localization of impurity local modes, and the mass defect factor is obtained by calculating the local density of states (LDOSs) of the impurity and its surrounding atoms in a semiconductor. Based on this empirical re