Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Shem, Purnell"'
Autor:
Amanda R. Boydstun, Nicholas L. McKibben, Aaron Thurber, Lloyd Lowe, Theron R. Fereday, Brian J. Frost, Seth M. Hubbard, Christian T. Wall, Jerry D. Harris, Jason Brotherton, Jennifer L. Strunk, Pamela Walker, Jesse S. Hyslop, Alex Punnoose, William B. Knowlton, Joanna R. Rusch, Cecelia C. Pena, Shem Purnell, Blake Rapp
Publikováno v:
Materials Science in Semiconductor Processing. 38:278-289
As an obvious candidate for a p-type dopant in ZnO, nitrogen remains elusive in this role. Nitrogen containing precursors are a potential means to incorporate nitrogen during MOCVD growth. One class of nitrogen-containing precursors are zinc acetate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02e70746dd08b53f0a3db49639134118
https://doi.org/10.1016/j.mssp.2015.04.001
https://doi.org/10.1016/j.mssp.2015.04.001
Autor:
Jesse S, Hyslop, Amanda R, Boydstun, Theron R, Fereday, Joanna R, Rusch, Jennifer L, Strunk, Christian T, Wall, Cecelia C, Pena, Nicholas L, McKibben, Jerry D, Harris, Aaron, Thurber, Alex, Punnoose, Jason, Brotherton, Pamela, Walker, Lloyd, Lowe, Blake, Rapp, Shem, Purnell, William B, Knowlton, Seth M, Hubbard, Brian J, Frost
Publikováno v:
Materials science in semiconductor processing. 38
As an obvious candidate for a p-type dopant in ZnO, nitrogen remains elusive in this role. Nitrogen containing precursors are a potential means to incorporate nitrogen during MOCVD growth. One class of nitrogen-containing precursors are zinc acetate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::a01030955ec742a4182c607e43df6c04
https://pubmed.ncbi.nlm.nih.gov/26085801
https://pubmed.ncbi.nlm.nih.gov/26085801
Autor:
Richard G. Southwick, Tibor Grasser, Ryan J. Thompson, Ben Kaczer, Shem Purnell, William B. Knowlton, Shane K. Pugmire, Blake Rapp
Publikováno v:
2011 IEEE International Integrated Reliability Workshop Final Report.
We present experimental evidence that trapping mechanisms contributing to the negative bias temperature instability (NBTI) of high-k dielectric p-channel metal oxide semiconductor (pMOS) transistors are thermally activated. Device behavior during str
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fc5f5c45e0068a29f46e4911b5776d4
https://doi.org/10.1109/iirw.2011.6142577
https://doi.org/10.1109/iirw.2011.6142577