Research Update: Atmospheric pressure spatial atomic layer deposition of ZnO thin films: Reactors, doping, and devices

Autor: Robert L. Z. Hoye, David Muñoz-Rojas, Shelby F. Nelson, Andrea Illiberi, Paul Poodt, Fred Roozeboom, Judith L. MacManus-Driscoll

Publikováno v: APL Materials, Vol 3, Iss 4, Pp 040701-040701-13 (2015)

Atmospheric pressure spatial atomic layer deposition (AP-SALD) has recently emerged as an appealing technique for rapidly producing high quality oxides. Here, we focus on the use of AP-SALD to deposit functional ZnO thin films, particularly on the re

Externí odkaz: https://doaj.org/article/f2d6b9b586b64ad9964f3901b31d4185

Modeling of Self-Aligned Vertical ZnO Thin-Film Transistors

Autor: Thomas N. Jackson, Shelby F. Nelson, Kaige G. Sun

Publikováno v: IEEE Transactions on Electron Devices. 62:1912-1917

Vertical zinc oxide (ZnO) thin-film transistors (TFTs) with submicrometer channel length have good performance, including large current density (>10 mA/mm), high mobility (> 14 cm $^{2}$ /Vs), and large current ON–OFF ratio ( $>10^{7})$ . They also

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4b71ca998472c5d0fad24fb1d0027b74
https://doi.org/10.1109/ted.2015.2418174

Thin-Film Morphology Control in Naphthalene-Diimide-Based Semiconductors: High Mobility n-Type Semiconductor for Organic Thin-Film Transistors

Autor: Wendy G. Ahearn, Shelby F. Nelson, Manju Rajeswaran, Deepak Shukla, Dianne M. Meyer, Diane Carol Freeman, Jeffrey Todd Carey

Publikováno v: Chemistry of Materials. 20:7486-7491

In organic thin film transistors (OTFT), the morphology and microstructure of an organic thin film has a strong impact on the charge carrier mobility and device characteristics. To have well-defined and predictable thin film morphology, it is necessa

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c0b30e075d592f86097cee80e8c7d06b
https://doi.org/10.1021/cm802071w

Design freedom in multilayer thin-film devices

Autor: Shelby F. Nelson, Carolyn R. Ellinger

Publikováno v: ACS applied materialsinterfaces. 7(8)

In fabricating inorganic thin-film devices, the relative etch rates of materials in a given etch chemistry often limit the obtainable multilayer structures. Alternatively, in fabricating multilayer organic devices by solution processing, the ability

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::69c028b9443c6d715e94e8d73ba83785
https://pubmed.ncbi.nlm.nih.gov/25705845

Research update : Atmospheric pressure spatial atomic layer deposition of ZnO thin films : reactors, doping and devices

Autor: David Muñoz-Rojas, Paul Poodt, Fred Roozeboom, Robert L. Z. Hoye, Judith L. MacManus-Driscoll, Andrea Illiberi, Shelby F. Nelson

Publikováno v: APL Materials
APL Materials, AIP Publishing 2015, 3 (4), pp.040701. ⟨10.1063/1.4916525⟩
APL Materials, 4, 3
APL Materials, Vol 3, Iss 4, Pp 040701-040701-13 (2015)
APL Materials, 3(4). American Institute of Physics

Atmospheric pressure spatial atomic layer deposition (AP-SALD) has recently emerged as an appealing technique for rapidly producing high quality oxides. Here, we focus on the use of AP-SALD to deposit functional ZnO thin films, particularly on the re

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::93b5ba2df4f0fd91c33467412594e2d0
https://doi.org/10.1063/1.4916525