Zobrazeno 1 - 10
of 159
pro vyhledávání: '"Sheinkman, M.K."'
Autor:
Borkovska, L.V. *, Baran, M.P., Korsunska, N.O., Markevich, I.V., Singaevsky, O.F., Sheinkman, M.K., Torchynska, T.V.
Publikováno v:
In Physica B: Physics of Condensed Matter 31 December 2003 340-342:258-262
Autor:
Korsunska, N.E., Markevich, I.V., Borkovska, L.V. *, Khomenkova, L.Yu., Sheinkman, M.K., Yastrubchak, O.
Publikováno v:
In Physica B: Physics of Condensed Matter 2001 308:967-970
Autor:
Torchynska, T.V *, Sheinkman, M.K, Korsunskaya, N.E, Khomenkovan, L.Yu, Bulakh, B.M, Dzhumaev, B.R, Many, A, Goldstein, Y, Savir, E
Publikováno v:
In Physica B: Physics of Condensed Matter 15 December 1999 273-274:955-958
The photoluminescence spectra of porous silicon at 77 and 300 K and their transformation during aging were investigated. The competition of two radiative recombination channels that have a common excitation mechanism was observed. It is shown that on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1456::5ba7677ace95d2b86c782c2eade62183
http://dspace.nbuv.gov.ua/handle/123456789/120640
http://dspace.nbuv.gov.ua/handle/123456789/120640
The theoretical consideration of the energy of the lowest singlet and triplet terms of shallow D¯-centers (two electrons, bound with one-charge Coulomb center) in semiconductors with an ionic and covalent binding has been carried out. The electron-p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1456::ef51a97dabb2c712bf6851621d9a3faf
http://dspace.nbuv.gov.ua/handle/123456789/118028
http://dspace.nbuv.gov.ua/handle/123456789/118028
Autor:
Borkovskaya, L.V., Dzhumaev, B.R., Khomenkova, L.Yu., Korsunskaya, N.E., Markevich, I.V., Sheinkman, M.K.
Electrodiffusion of copper into nominally undoped high-resistivity CdS crystals at 250-400°C has been investigated. A strong diffusion anisotropy has been observed, copper diffusion in perpendicular to the c-axis direction being more than one order
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1456::f1dbddf697daea224a768b0606be27c8
http://dspace.nbuv.gov.ua/handle/123456789/121175
http://dspace.nbuv.gov.ua/handle/123456789/121175
Autor:
Markevich, I.V., Kushnirenko, V.I., Borkovska, L.V., Bulakh, B.M., Sheinkman, M.K., Prokopenko, I.V.
Publikováno v:
In Solid State Communications 2007 144(5):236-239
Autor:
Korsunskaya, N.E., Sheinkman, M.K., Valakh, M.Ya., Torchinskaya, T.V., Khomenkova, L.Yu., Yukhimchuk, V.A., Bulakh, B.M., Dzhumaev, M.K., Many, A., Goldstein, Y., Savir, E.
Publikováno v:
ASDAM 2000. Conference Proceedings Third International EuroConference on Advanced Semiconductor Devices & Microsystems (Cat. No.00EX386); 2000, p339-342, 4p
Publikováno v:
Physica Status Solidi (B); Jan2002, Vol. 229 Issue 1, p269-273, 5p
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