Solution-processed NiPS3 thin films from Liquid Exfoliated Inks with Long-Lived Spin-Entangled Excitons

Autor: Shcherbakov, Andrii, Synnatschke, Kevin, Bodnar, Stanislav, Zerhoch, Johnathan, Eyre, Lissa, Rauh, Felix, Heindl, Markus W., Liu, Shangpu, Konecny, Jan, Sharp, Ian D., Sofer, Zdenek, Backes, Claudia, Deschler, Felix

Antiferromagnets are promising materials for future opto-spintronic applications since they show spin dynamics in the THz range and no net magnetization. Recently, layered van der Waals (vdW) antiferromagnets have been reported, which combine low-dim

Externí odkaz: http://arxiv.org/abs/2303.11788

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Optically Induced Long-Lived Chirality Memory in the Color-Tunable Chiral Lead-Free Semiconductor (R)/(S)-CHEA4Bi2BrxI10–x(x= 0–10)

Autor: Liu, Shangpu, Heindl, Markus W., Fehn, Natalie, Caicedo-Dávila, Sebastián, Eyre, Lissa, Kronawitter, Silva Maria, Zerhoch, Jonathan, Bodnar, Stanislav, Shcherbakov, Andrii, Stadlbauer, Anna, Kieslich, Gregor, Sharp, Ian D., Egger, David A., Kartouzian, Aras, Deschler, Felix

Publikováno v: Journal of the American Chemical Society; August 2022, Vol. 144 Issue: 31 p14079-14089, 11p

Solution-Processed NiPS 3 Thin Films from Liquid Exfoliated Inks with Long-Lived Spin-Entangled Excitons.

Autor: Shcherbakov A; Institute for Physical Chemistry, Heidelberg University, Im Neuenheimer Feld 229, 69120 Heidelberg, Germany.; Walter Schottky Institute and Physics Department, Technical University of Munich, Am Coulombwall 4, 85748 Garching by Munich, Germany., Synnatschke K; School of Physics, Trinity College Dublin, The University of Dublin, Dublin 2, Ireland.; Applied Physical Chemistry, Heidelberg University, Im Neuenheimer Feld 253, 69120 Heidelberg, Germany., Bodnar S; Institute for Physical Chemistry, Heidelberg University, Im Neuenheimer Feld 229, 69120 Heidelberg, Germany.; Walter Schottky Institute and Physics Department, Technical University of Munich, Am Coulombwall 4, 85748 Garching by Munich, Germany., Zerhoch J; Institute for Physical Chemistry, Heidelberg University, Im Neuenheimer Feld 229, 69120 Heidelberg, Germany.; Walter Schottky Institute and Physics Department, Technical University of Munich, Am Coulombwall 4, 85748 Garching by Munich, Germany., Eyre L; Walter Schottky Institute and Physics Department, Technical University of Munich, Am Coulombwall 4, 85748 Garching by Munich, Germany.; Electrical Engineering Division, University of Cambridge, 9 JJ Thomson Ave, Cambridge CB3 0FA, United Kingdom., Rauh F; Walter Schottky Institute and Physics Department, Technical University of Munich, Am Coulombwall 4, 85748 Garching by Munich, Germany., Heindl MW; Institute for Physical Chemistry, Heidelberg University, Im Neuenheimer Feld 229, 69120 Heidelberg, Germany.; Walter Schottky Institute and Physics Department, Technical University of Munich, Am Coulombwall 4, 85748 Garching by Munich, Germany., Liu S; Institute for Physical Chemistry, Heidelberg University, Im Neuenheimer Feld 229, 69120 Heidelberg, Germany.; Walter Schottky Institute and Physics Department, Technical University of Munich, Am Coulombwall 4, 85748 Garching by Munich, Germany., Konecny J; Department of Inorganic Chemistry, Faculty of Chemical Technology, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic., Sharp ID; Walter Schottky Institute and Physics Department, Technical University of Munich, Am Coulombwall 4, 85748 Garching by Munich, Germany., Sofer Z; Department of Inorganic Chemistry, Faculty of Chemical Technology, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic., Backes C; Applied Physical Chemistry, Heidelberg University, Im Neuenheimer Feld 253, 69120 Heidelberg, Germany.; Physical Chemistry of Nanomaterials, University of Kassel, Heinrich-Plett-Straße 40, 34132 Kassel, Germany., Deschler F; Institute for Physical Chemistry, Heidelberg University, Im Neuenheimer Feld 229, 69120 Heidelberg, Germany.; Walter Schottky Institute and Physics Department, Technical University of Munich, Am Coulombwall 4, 85748 Garching by Munich, Germany.

Publikováno v: ACS nano [ACS Nano] 2023 Jun 13; Vol. 17 (11), pp. 10423-10430. Date of Electronic Publication: 2023 May 23.