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Two sources of room temperature visible luminescence are identified from SiO2 films containing ion beam synthesized Si nanocrystals. From a comparison of luminescence spectra and photoluminescence decay lifetime measurements between Xe + -implanted S
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Synthesis of Ge nanocrystals in SiO2 films is carried out by precipitation from a supersaturated solid solution of Ge in SiO2 made by Ge ion implantation. The films exhibit strong room-temperature visible photoluminescence. The measured photoluminesc
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Electroluminescent devices were fabricated in SiO_2 films containing Ge nanocrystals formed by ion implantation and precipitation during annealing at 900 °C, and the visible room‐temperature electroluminescence and photoluminescence spectra were f
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https://resolver.caltech.edu/CaltechAUTHORS:20120215-093505302
https://resolver.caltech.edu/CaltechAUTHORS:20120215-093505302
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B; 1995, Vol. 106 Issue: 1 p433-437, 5p
Autor:
Atwater, H. A., Shcheglov, K. V., Wong, S. S., Vahala, K. J., Flagan, R. C., Brongersma, M. L., Polman, A.
Publikováno v:
MRS Online Proceedings Library; 01/24/1993, Vol. 321, pN.PAG-1, 1p