Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Shay Attal"'
Autor:
Kevin Houchens, Yaniv Abramovitz, Shay Attal, Ofer Adan, Nahum Bomshtein, Itai Buks, Ryan Hsieh, Tal Itzkovich, Jenny Perry
Publikováno v:
Metrology, Inspection, and Process Control XXXVII.
Publikováno v:
SPIE Proceedings.
The allowable wafer Critical Dimension Uniformity (CDU) budget of the 2x node poses stringent requirements on mask induced errors at wafer level. The total CDU budget of 2 nm which is partially consumed by across wafer and field process and imaging v
Autor:
Michael Ben Yishai, Jo Finders, Marcel Demarteau, Ilan Englard, Shmoolik Mangan, Netanel Polonsky, Ziv Parizat, Shay Attal, Frank Duray, Ingrid Minnaert Janssen, Yaron Cohen, Onno Wismans, Yair Elblinger
Publikováno v:
SPIE Proceedings.
Scanner introduction into the fab production environment is a challenging task. An efficient evaluation of scanner performance matrices during factory acceptance test (FAT) and later on during site acceptance test (SAT) is crucial for minimizing the
Autor:
Yair Elblinger, Michael Ben-Yishai, Lior Shoval, Neil Berns, Shay Attal, Shmoolik Mangan, Yaron Cohen, Ilan Englard
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXIII.
The economy of wafer fabs is changing faster for 3x geometry requirements and below. Mask set and exposure tool costs are almost certain to increase the overall cost per die requiring manufacturers to develop productivity and yield improvements to de