Zobrazeno 1 - 10
of 251
pro vyhledávání: '"Shawn S. H. Hsu"'
Publikováno v:
IEEE Access, Vol 9, Pp 4665-4672 (2021)
A high-efficiency compact broadband rectifier is developed for wireless energy harvesting. A novel three-stage impedance matching technique is utilized in a broadband rectifier design to achieve high conversion efficiency with a compact size. In the
Externí odkaz:
https://doaj.org/article/6511a00b75c44fc79de53dba171930d1
Publikováno v:
IEEE Access, Vol 8, Pp 82035-82041 (2020)
A novel wire bonded GaN rectifier for high-power wireless power transfer (WPT) applications is proposed. The low breakdown voltage in silicon Schottky diodes limits the high-power operations of microwave rectifier. The proposed microwave rectifier co
Externí odkaz:
https://doaj.org/article/9d020a0ae09843c5980df44ee29f634d
Autor:
Shang Hong, Shawn S. H. Hsu
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 71:1044-1054
Publikováno v:
IEEE Microwave and Wireless Technology Letters. :1-4
Publikováno v:
IEEE Microwave and Wireless Components Letters. 32:1103-1106
Publikováno v:
2022 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT).
Publikováno v:
IEEE Access, Vol 9, Pp 4665-4672 (2021)
A high-efficiency compact broadband rectifier is developed for wireless energy harvesting. A novel three-stage impedance matching technique is utilized in a broadband rectifier design to achieve high conversion efficiency with a compact size. In the
Publikováno v:
2021 IEEE MTT-S International Microwave Symposium (IMS).
A low electromagnetic susceptibility voltage-controlled oscillator (VCO) utilizing a four-leaf-clover-shaped inductor is demonstrated at 5 GHz by 0.18-µm CMOS. A novel chip-level near-field coupling measurement setup resembling the modern 3D stacked
Publikováno v:
2021 IEEE MTT-S International Microwave Symposium (IMS).
In this paper, a 64-Gbaud transimpedance amplifier in 130nm SiGe technology is presented. The π-network broadband technique and shunt-shunt RC feedback are proposed to achieve high gain and wide bandwidth simultaneously. The small-signal results sho
Autor:
Sih-Han Li, Shawn S. H. Hsu, Jie Zhang, Chih-Sheng Lin, Shang-Chun Chen, Pei-Jer Tzeng, Kuan-Wei Chen
Publikováno v:
IEEE Transactions on Components, Packaging and Manufacturing Technology. 9:2143-2151
This article presents the design, characterization, and modeling for the novel 3-D transformer structures based on the in-house developed 3-D integrated circuit (3-D IC) via-last backside-through-silicon via (TSV) interposer process. Differing from t