Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Shawn R. Gibb"'
Autor:
Kim Dae Ho, Ya Shen, David M. Aichele, Ramakrishna Vetury, Mary Winters, Joe Jech, Shawn R. Gibb, Michael A. McLain, Michael D. Hodge, Ken Fallon, Jeffrey B. Shealy, Houlden Rohan W, Pinal Patel
Publikováno v:
2017 IEEE International Electron Devices Meeting (IEDM).
5.24GHz bulk acoustic wave filters, utilizing undoped single crystal aluminum nitride, are reported. The filters had an absolute 4dB bandwidth of 151 MHz, a minimum insertion loss of 2.82 dB and rejection >38 dB. Resonators show k2 eff of 6.32%, Q rn
Autor:
Pinal Patel, Ramakrishna Vetury, Rohan Holden, Michael A. McLain, Shawn R. Gibb, Mark D. Boomgarden, Brook Hosse, Jeffrey B. Shealy, Alexander Y. Feldman, Michael P. Lewis, Michael D. Hodge
Publikováno v:
2017 IEEE MTT-S International Microwave Symposium (IMS).
Bulk acoustic wave (BAW) filters operating at center frequency of 3.7GHz, comprising of BAW resonators utilizing single crystal aluminum nitride (AlN) piezoelectric films epitaxially grown on silicon carbide (SiC) substrates, are reported. Metal-orga
Publikováno v:
International Journal of High Speed Electronics and Systems. 20:497-504
Low dislocation density pseudomorphic epitaxial layers of Al x Ga 1- x N have been grown on c -face AlN substrates prepared from high quality bulk crystals. As reported previously, pseudomorphic growth yields very low dislocation density layers with
Publikováno v:
physica status solidi c. 8:1528-1533
High quality, bulk aluminum nitride substrates were used to obtain pseudomorphic AlxGa1-xN layers with low dislocation density, smooth surfaces, and high conductivity. These layers were fabricated into mid-ultraviolet light emitting diodes with peak
Autor:
R. Vetury, Bharath Vembu, Shawn R. Gibb, David Hepper, D. S. Green, Daniel Jin, L. Thomas Beechem, Jeffrey B. Shealy, Samuel Graham
Publikováno v:
physica status solidi c. 5:2026-2029
GaN HEMT reliability evaluation in a typical Arrhenius manner requires establishing peak junction temperature for a particular stress condition. Several new techniques have yielded promising results toward establishing peak temperature for these devi
High-power pseudomorphic mid-ultraviolet light-emitting diodes with improved efficiency and lifetime
Autor:
James R. Grandusky, Craig Moe, Ken Kitamura, Leo J. Schowalter, Shawn R. Gibb, Mark C. Mendrick, Muhammad Jamil, Masato Toita, Jianfeng Chen
Publikováno v:
SPIE Proceedings.
Recent advances in mid-ultraviolet light-emitting diodes grown pseudomorphically on bulk AlN substrates have led to improved efficiencies and lifetimes. For a 266 nm device an output power of 66 mW at 300 mA has been achieved with an external quantum
Publikováno v:
physica status solidi c. 7:2199-2201
Low dislocation density, epitaxial layers of AlxGa1–xN are grown pseudomorphically on native AlN substrates prepared from high quality, bulk crystals. In addition to low dislocation density, they are atomically smooth and can be doped n-type to obt
High Power Pseudomorphic Mid Ultraviolet Light Emitting Diodes with Improved Efficiency and Lifetime
Autor:
Craig Moe, Muhammad Jamil, James R. Grandusky, Leo J. Schowalter, Shawn R. Gibb, Mark C. Mendrick, Jianfeng Chen
Publikováno v:
Renewable Energy and the Environment.
Mid ultraviolet light emitting diodes were pseudomorphically grown on bulk AlN substrates. Devices stressed at 100mA show minimal power decay for over 1000 hours. 66mW output power is achieved at continuous wave current of 300mA.
Autor:
Jianfeng Chen, Leo J. Schowalter, Mark C. Mendrick, James R. Grandusky, Craig Moe, Shawn R. Gibb, Michael Wraback
Publikováno v:
2012 Lester Eastman Conference on High Performance Devices (LEC).
Improvements to 260 nm ultraviolet light emitting diodes has led to wall plug efficiencies greater than 5% and output powers of 50 mW for a single chip in continuous wave operation.
Publikováno v:
2012 Lester Eastman Conference on High Performance Devices (LEC).
We designed and fabricated 260 nm ultraviolet light emitting diodes that were pseudomorphically grown on AlN substrates. Thinning the substrates, roughening the emission surfaces, and encapsulating contributed to increasing the photon extraction effi