Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Shawn Penson"'
Publikováno v:
Journal of Crystal Growth. 311:2191-2194
Epitaxial neodymium-doped yttrium aluminum perovskite ( Nd : YAlO 3 ) has been grown by plasma-assisted molecular beam epitaxy on R-plane sapphire at 985 ∘ C . The substrates were annealed in air at 1150 ∘ C to generate atomically ordered surface
Publikováno v:
Optical Materials. 30:835-838
Crystalline yttrium oxide films have been grown on Si (0 0 1) and sapphire (0001) substrates by molecular beam epitaxy using molecular oxygen and thermal evaporation of yttrium. Neodymium doped films showed strong room temperature photoluminescence f
Publikováno v:
Optics letters. 35(22)
Single-crystal aluminum-gallium oxide films have been grown by molecular beam epitaxy in the corundum phase. Films of the (Al(1-x)Ga(x))(2)O(3) alloys doped with neodymium have favorable properties for solid-state waveguide lasers, including a high-t
Publikováno v:
Applied optics. 49(4)
Optical wave propagation in neodymium-doped yttrium oxide (Nd:Y2O3) films grown on R-plane sapphire substrates by molecular beam epitaxy has been studied by the prism coupler method. The measurements yield propagation loss data, the refractive index,
Autor:
P. Wei, Raveen Kumaran, Shawn Penson, François Schiettekatte, Wei Li, Scott E. Webster, Thomas Tiedje
Publikováno v:
Optics letters. 34(21)
Epitaxial films of neodymium-doped sapphire have been grown by molecular beam epitaxy on R-, A-, and M-plane sapphire substrates. The emission spectrum features sharp lines consistent with single-site doping of the Nd(3+) ion into the host crystal. T
Publikováno v:
Frontiers in Optics 2009/Laser Science XXV/Fall 2009 OSA Optics & Photonics Technical Digest.
Nd:Sapphire films grown by molecular beam epitaxy produce sharp emission lines due to identical-site doping not observed in bulk sapphire crystals. The 1096 nm line is a lasing candidate with an Nd:YVO4-like emission cross section.
Publikováno v:
Advanced Solid-State Photonics.
Thin films of Nd:Y2O3 have been grown by molecular beam epitaxy. The deposition process has been optimized to generate materials with excellent crystalline and optical properties that are suitable for planar waveguide lasers.
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28:C3A20-C3A23
High structural quality yttrium oxide films have been grown on R-plane sapphire by molecular beam epitaxy. X-ray diffraction measurements showed clear pendellosung fringes and sharp peaks. X-ray measurements indicate that the films grow nearly perfec