Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Shawn D. Burnham"'
Autor:
Joel C. Wong, Haw Y. Tai, Helen Fung, D. Regan, D. F. Brown, Dayward Santos, Eric M. Prophet, Shawn D. Burnham, Miroslav Micovic, A. Kurdoghlian, Jesus Magadia, Isaac Khalaf, Yan Tang, Bob Grabar
Publikováno v:
IEEE Electron Device Letters. 38:1708-1711
We report the state-of-the-art $V$ -band power performance of a scaled 40-nm gate length Al0.23Ga0.77N/AlN/GaN/Al0.08Ga0.92N double heterojunction field effect transistor (DHFET). The $200~\mu \text{m}$ ( $4\times 50 ~\mu \text{m}$ ) wide GaN DHFETs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f0e2db75cf2de7515da41fefbef6647
https://doi.org/10.1109/led.2017.2763940
https://doi.org/10.1109/led.2017.2763940
Autor:
David F. Brown, Miroslav Micovic, Dayward Santos, Jesus Magadia, R. Bowen, Shawn D. Burnham, Robert Grabar, Joe Tai, Isaac Khalaf
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 30:480-485
HRL’s T3 GaN MMIC technology is evaluated using dc reliability experiments, including a voltage step-stress test, a temperature step-stress test, and a 3-temperature life test. The drain voltage step-stress test revealed three distinct regions of o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6192ed1cc0d83bcc42f81e02568f8095
https://doi.org/10.1109/tsm.2017.2748921
https://doi.org/10.1109/tsm.2017.2748921
Autor:
Joe Tai, Joel C. Wong, Helen Fung, Hector L. Bracamontes, Eric M. Prophet, David F. Brown, A. Kurdoghlian, D. Regan, C. McGuire, Miroslav Micovic, Dayward Santos, Shawn D. Burnham, Adele E. Schmitz, Herrault Florian G, Isaac Khalaf, Yan Tang
Publikováno v:
2016 IEEE International Electron Devices Meeting (IEDM).
We provide an overview of key challenges and technical breakthroughs that led to development of highly scaled GaN HEMT's having ft > 400 GHz and fmax > 550 GHz and the corresponding IC process. These highly scaled GaN devices have 5 times higher brea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0619ddec3291dba53fc3e0a76909659d
https://doi.org/10.1109/iedm.2016.7838337
https://doi.org/10.1109/iedm.2016.7838337
Autor:
Isaac Khalaf, Yan Tang, Joel Wong, Miroslav Micovic, Eric M. Prophet, Joe Tai, Dayward Santos, Helen Fung, Charles McGuire, David F. Brown, Shawn D. Burnham, A. Kurdoghlian, Adele E. Schmitz, Herrault Florian G, Robert Grabar, Hector L. Bracamontes, D. Regan
Publikováno v:
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
We report the first generation of GaN MMIC circuits that are based on the latest generation of (ft > 320 GHz and fmax > 580 GHz) [1] GaN Transistors. The reported broadband Ka-band (27 GHz - 40 GHz) GaN LNA MMIC's have Noise Figure (NF) as low as 1 d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a502bdc7477f683fa90c3e2669a53bb
https://doi.org/10.1109/csics.2016.7751051
https://doi.org/10.1109/csics.2016.7751051
Autor:
Mary Chen, Hector L. Bracamontes, R. Bowen, Pete Willadsen, Shawn D. Burnham, Paul Hashimoto, D. Wong, Miroslav Micovic, Ming Hu
Publikováno v:
physica status solidi c. 8:2399-2403
For the first time, we report on degradation mechanisms of short gate length (Lg = 0.15 µm) T-gate AlGaN/GaN HEMTs, and compare to previously reported findings for GaN field plate devices of the same gate length. Both types of studied devices were s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64c3856bccd6e879c4919fd339051dfa
https://doi.org/10.1002/pssc.201000916
https://doi.org/10.1002/pssc.201000916
Autor:
Paul Hashimoto, Adam J. Williams, Adele E. Schmitz, Keisuke Shinohara, C. Butler, S. Kim, Robert Grabar, D. Regan, P. J. Willadsen, Shawn D. Burnham, Andrea Corrion, Miroslav Micovic, David F. Brown, Ivan Milosavljevic
Publikováno v:
IEEE Transactions on Electron Devices. 58:1063-1067
We have achieved the monolithic integration of two Ill-nitride device structures through the use of etching and re growth by molecular beam epitaxy (MBE). Using this regrowth technique, we integrated enhancement-mode (E-mode) and depletion-mode (D-mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::055e7fcae09a91e684610c0abcb3e6df
https://doi.org/10.1109/ted.2011.2105268
https://doi.org/10.1109/ted.2011.2105268
Publikováno v:
physica status solidi c. 5:1855-1858
Improvements to the Metal Modulated Epitaxy (MME) technique are achieved through computer controlled shutter transitions based on feedback from RHEED transients (S. D. Burnham and W. A. Doolittle, J. Vac. Sci. Technol. B 24, 2100 (2006) [1]), thus cr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34541064e1fb2c65dca729a73c20e398
https://doi.org/10.1002/pssc.200778703
https://doi.org/10.1002/pssc.200778703
Autor:
Elaissa Trybus, Alexander N. Cartwright, Maurice Cheung, Shawn D. Burnham, Gon Namkoong, Walter Henderson, W. Alan Doolittle
Publikováno v:
Journal of Crystal Growth. 288:218-224
The potential of InN as a photovoltaic material is described. For solar applications, several key developments such as p-type doping and solid-state rectifying junctions have yet to be demonstrated. However, the ability of InGaN materials to optimall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77e25efa05442687bd4eee521e571881
https://doi.org/10.1016/j.jcrysgro.2005.12.120
https://doi.org/10.1016/j.jcrysgro.2005.12.120
Publikováno v:
Journal of Crystal Growth. 279:26-30
A valved thermal cracker was used as the Mg dopant source for growing p-type GaN, and benefits of this device over conventional effusion cells are outlined. The thermally energetic Mg cracker source, with an independent, valved-flux control, was used
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12f8f15d337dcd65239552490463e4af
https://doi.org/10.1016/j.jcrysgro.2005.02.001
https://doi.org/10.1016/j.jcrysgro.2005.02.001
Autor:
David F. Brown, Adam J. Williams, Keisuke Shinohara, Michael Johnson, Dayward Santos, Thomas C. Oh, Joel C. Wong, Shawn D. Burnham, John F. Robinson, C. Butler, Robert Grabar, Rongming Chu, S. Kim, Daniel Zehnder, Miroslav Micovic, Ivan Alvarado-Rodriguez, Andrea Corrion
Publikováno v:
IEEE Electron Device Letters. 34:1118-1120
We report a novel GaN heterojunction field-effect transistor device that incorporates vertically scaled epilayers, a nanoscale gate with integrated staircase-shaped field plates, and regrown ohmic contacts. This device technology has an unprecedented
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5525cdf8d7f6c5a7ffd26d186fe5dc4
https://doi.org/10.1109/led.2013.2273172
https://doi.org/10.1109/led.2013.2273172