Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Shavelkina MB"'
Autor:
Antonova IV; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Av., Novosibirsk 630090, Russia. antonova@isp.nsc.ru.; Department of Semiconductor Devices and Microelectronics, Novosibirsk State Technical University, 20 K. Marx Str., Novosibirsk 630073, Russia., Ivanov AI; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Av., Novosibirsk 630090, Russia. antonova@isp.nsc.ru., Shavelkina MB; Joint Institute for High Temperatures RAS, Izhorskaya Str. 13 Bd.2, Moscow 125412, Russia., Poteryayev DA; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Av., Novosibirsk 630090, Russia. antonova@isp.nsc.ru.; Department of Semiconductor Devices and Microelectronics, Novosibirsk State Technical University, 20 K. Marx Str., Novosibirsk 630073, Russia., Buzmakova AA; Department of Semiconductor Devices and Microelectronics, Novosibirsk State Technical University, 20 K. Marx Str., Novosibirsk 630073, Russia., Soots RA; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Av., Novosibirsk 630090, Russia. antonova@isp.nsc.ru.
Publikováno v:
Physical chemistry chemical physics : PCCP [Phys Chem Chem Phys] 2024 Feb 28; Vol. 26 (9), pp. 7844-7854. Date of Electronic Publication: 2024 Feb 28.
Autor:
Antonova IV; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev aven., Novosibirsk 630090, Russia. antonova@isp.nsc.ru.; Novosibirsk State Technical University, 20 K. Marx str., Novosibirsk 630073, Russia., Poteryayev DA; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev aven., Novosibirsk 630090, Russia. antonova@isp.nsc.ru., Ivanov AI; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev aven., Novosibirsk 630090, Russia. antonova@isp.nsc.ru., Nebogatikova NA; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev aven., Novosibirsk 630090, Russia. antonova@isp.nsc.ru., Shavelkina MB; Joint Institute for High Temperatures RAS, 13 Izhorskaya str., Bld.2, Moscow 125412, Russia.
Publikováno v:
Physical chemistry chemical physics : PCCP [Phys Chem Chem Phys] 2024 Feb 07; Vol. 26 (6), pp. 5489-5498. Date of Electronic Publication: 2024 Feb 07.
Autor:
Antonova IV; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Aven., Novosibirsk 630090, Russia. antonova@isp.nsc.ru.; Novosibirsk State Technical University, 20 K. Marx Str., Novosibirsk 630073, Russia., Shavelkina MB; Joint Institute for High Temperatures RAS, 13 Bld.2 Izhorskaya Str., Moscow 125412, Russia., Ivanov AI; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Aven., Novosibirsk 630090, Russia. antonova@isp.nsc.ru., Nebogatikova NA; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Aven., Novosibirsk 630090, Russia. antonova@isp.nsc.ru., Soots RA; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Aven., Novosibirsk 630090, Russia. antonova@isp.nsc.ru., Volodin VA; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Aven., Novosibirsk 630090, Russia. antonova@isp.nsc.ru.; Novosibirsk State University, 2 Pirogov Str., Novosibirsk 630090, Russia.
Publikováno v:
Physical chemistry chemical physics : PCCP [Phys Chem Chem Phys] 2022 Nov 30; Vol. 24 (46), pp. 28232-28241. Date of Electronic Publication: 2022 Nov 30.
Autor:
Antonova IV; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Aven., Novosibirsk 630090, Russia.; Department of Semiconductor Devices and Microelectronics, Novosibirsk State Technical University, 20 K. Marx Str., Novosibirsk 630073, Russia., Shavelkina MB; Joint Institute for High Temperatures RAS, Izhorskaya Str. 13 Bd.2, Moscow 125412, Russia., Ivanov AI; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Aven., Novosibirsk 630090, Russia., Poteryaev DA; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Aven., Novosibirsk 630090, Russia.; Department of Semiconductor Devices and Microelectronics, Novosibirsk State Technical University, 20 K. Marx Str., Novosibirsk 630073, Russia., Nebogatikova NA; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Aven., Novosibirsk 630090, Russia., Buzmakova AA; Department of Semiconductor Devices and Microelectronics, Novosibirsk State Technical University, 20 K. Marx Str., Novosibirsk 630073, Russia., Soots RA; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Aven., Novosibirsk 630090, Russia., Katarzhis VA; Joint Institute for High Temperatures RAS, Izhorskaya Str. 13 Bd.2, Moscow 125412, Russia.
Publikováno v:
Nanomaterials (Basel, Switzerland) [Nanomaterials (Basel)] 2022 May 17; Vol. 12 (10). Date of Electronic Publication: 2022 May 17.
Autor:
Antonova IV; Rzhanov Institute of Semiconductor Physics SB RAS, Lavrentieva 13, Novosibirsk 630090, Russia.; Department of Semiconductor Devices and Microelectronics, Novosibirsk State Technical University, R Marx str. 20, Novosibirsk 630073, Russia., Shavelkina MB; Joint Institute for High Temperatures RAS, Izhorskaya st. 13 Bd.2, Moscow 125412, Russia., Ivanov AI; Rzhanov Institute of Semiconductor Physics SB RAS, Lavrentieva 13, Novosibirsk 630090, Russia., Soots RA; Rzhanov Institute of Semiconductor Physics SB RAS, Lavrentieva 13, Novosibirsk 630090, Russia., Ivanov PP; Joint Institute for High Temperatures RAS, Izhorskaya st. 13 Bd.2, Moscow 125412, Russia., Bocharov AN; Joint Institute for High Temperatures RAS, Izhorskaya st. 13 Bd.2, Moscow 125412, Russia.
Publikováno v:
Nanomaterials (Basel, Switzerland) [Nanomaterials (Basel)] 2020 Oct 16; Vol. 10 (10). Date of Electronic Publication: 2020 Oct 16.