Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Shavelkina MB"'
Autor:
Antonova IV; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Av., Novosibirsk 630090, Russia. antonova@isp.nsc.ru.; Department of Semiconductor Devices and Microelectronics, Novosibirsk State Technical University, 20 K. Marx Str., Novosibirsk 630073, Russia., Ivanov AI; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Av., Novosibirsk 630090, Russia. antonova@isp.nsc.ru., Shavelkina MB; Joint Institute for High Temperatures RAS, Izhorskaya Str. 13 Bd.2, Moscow 125412, Russia., Poteryayev DA; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Av., Novosibirsk 630090, Russia. antonova@isp.nsc.ru.; Department of Semiconductor Devices and Microelectronics, Novosibirsk State Technical University, 20 K. Marx Str., Novosibirsk 630073, Russia., Buzmakova AA; Department of Semiconductor Devices and Microelectronics, Novosibirsk State Technical University, 20 K. Marx Str., Novosibirsk 630073, Russia., Soots RA; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Av., Novosibirsk 630090, Russia. antonova@isp.nsc.ru.
Publikováno v:
Physical chemistry chemical physics : PCCP [Phys Chem Chem Phys] 2024 Feb 28; Vol. 26 (9), pp. 7844-7854. Date of Electronic Publication: 2024 Feb 28.
Autor:
Antonova IV; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev aven., Novosibirsk 630090, Russia. antonova@isp.nsc.ru.; Novosibirsk State Technical University, 20 K. Marx str., Novosibirsk 630073, Russia., Poteryayev DA; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev aven., Novosibirsk 630090, Russia. antonova@isp.nsc.ru., Ivanov AI; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev aven., Novosibirsk 630090, Russia. antonova@isp.nsc.ru., Nebogatikova NA; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev aven., Novosibirsk 630090, Russia. antonova@isp.nsc.ru., Shavelkina MB; Joint Institute for High Temperatures RAS, 13 Izhorskaya str., Bld.2, Moscow 125412, Russia.
Publikováno v:
Physical chemistry chemical physics : PCCP [Phys Chem Chem Phys] 2024 Feb 07; Vol. 26 (6), pp. 5489-5498. Date of Electronic Publication: 2024 Feb 07.
Autor:
Antonova IV; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Aven., Novosibirsk 630090, Russia. antonova@isp.nsc.ru.; Novosibirsk State Technical University, 20 K. Marx Str., Novosibirsk 630073, Russia., Shavelkina MB; Joint Institute for High Temperatures RAS, 13 Bld.2 Izhorskaya Str., Moscow 125412, Russia., Ivanov AI; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Aven., Novosibirsk 630090, Russia. antonova@isp.nsc.ru., Nebogatikova NA; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Aven., Novosibirsk 630090, Russia. antonova@isp.nsc.ru., Soots RA; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Aven., Novosibirsk 630090, Russia. antonova@isp.nsc.ru., Volodin VA; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Aven., Novosibirsk 630090, Russia. antonova@isp.nsc.ru.; Novosibirsk State University, 2 Pirogov Str., Novosibirsk 630090, Russia.
Publikováno v:
Physical chemistry chemical physics : PCCP [Phys Chem Chem Phys] 2022 Nov 30; Vol. 24 (46), pp. 28232-28241. Date of Electronic Publication: 2022 Nov 30.
Autor:
Antonova IV; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Aven., Novosibirsk 630090, Russia.; Department of Semiconductor Devices and Microelectronics, Novosibirsk State Technical University, 20 K. Marx Str., Novosibirsk 630073, Russia., Shavelkina MB; Joint Institute for High Temperatures RAS, Izhorskaya Str. 13 Bd.2, Moscow 125412, Russia., Ivanov AI; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Aven., Novosibirsk 630090, Russia., Poteryaev DA; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Aven., Novosibirsk 630090, Russia.; Department of Semiconductor Devices and Microelectronics, Novosibirsk State Technical University, 20 K. Marx Str., Novosibirsk 630073, Russia., Nebogatikova NA; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Aven., Novosibirsk 630090, Russia., Buzmakova AA; Department of Semiconductor Devices and Microelectronics, Novosibirsk State Technical University, 20 K. Marx Str., Novosibirsk 630073, Russia., Soots RA; Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Aven., Novosibirsk 630090, Russia., Katarzhis VA; Joint Institute for High Temperatures RAS, Izhorskaya Str. 13 Bd.2, Moscow 125412, Russia.
Publikováno v:
Nanomaterials (Basel, Switzerland) [Nanomaterials (Basel)] 2022 May 17; Vol. 12 (10). Date of Electronic Publication: 2022 May 17.
Autor:
Antonova IV; Rzhanov Institute of Semiconductor Physics SB RAS, Lavrentieva 13, Novosibirsk 630090, Russia.; Department of Semiconductor Devices and Microelectronics, Novosibirsk State Technical University, R Marx str. 20, Novosibirsk 630073, Russia., Shavelkina MB; Joint Institute for High Temperatures RAS, Izhorskaya st. 13 Bd.2, Moscow 125412, Russia., Ivanov AI; Rzhanov Institute of Semiconductor Physics SB RAS, Lavrentieva 13, Novosibirsk 630090, Russia., Soots RA; Rzhanov Institute of Semiconductor Physics SB RAS, Lavrentieva 13, Novosibirsk 630090, Russia., Ivanov PP; Joint Institute for High Temperatures RAS, Izhorskaya st. 13 Bd.2, Moscow 125412, Russia., Bocharov AN; Joint Institute for High Temperatures RAS, Izhorskaya st. 13 Bd.2, Moscow 125412, Russia.
Publikováno v:
Nanomaterials (Basel, Switzerland) [Nanomaterials (Basel)] 2020 Oct 16; Vol. 10 (10). Date of Electronic Publication: 2020 Oct 16.
Autor:
Kulakova, I. I.1 (AUTHOR), Lisichkin, G. V.1 (AUTHOR) lisich@petrol.chem.msu.ru
Publikováno v:
Pharmaceutical Chemistry Journal. Apr2022, Vol. 56 Issue 1, p1-11. 11p.
Publikováno v:
Plasma Chemistry & Plasma Processing; Jan2024, Vol. 44 Issue 1, p305-334, 30p
Publikováno v:
Plasma Chemistry & Plasma Processing; Jan2024, Vol. 44 Issue 1, p65-94, 30p
Publikováno v:
Plasma Chemistry & Plasma Processing; 2021, Vol. 41 Issue 1, p171-189, 19p
This Handbook covers the fundamentals of carbon nanotubes (CNT), their composites with different polymeric materials (both natural and synthetic) and their potential advanced applications. Three different parts dedicated to each of these aspects are