Zobrazeno 1 - 10
of 59
pro vyhledávání: '"Shaunee Cheng"'
Autor:
Shaunee Cheng, R.B. Alkhayat, J. Bancroft Brown, R. E. Irving, Miranda Brown, Negar Heidarian, Steven Federman, Lorenzo J. Curtis
We report lifetimes, branching fractions, and the resulting oscillator strengths for transitions within the P II multiplet (3s23p2 3P - 3s3p3 3Po) at 1308 {\AA}. These comprehensive beam-foil measurements, which are the most precise set currently ava
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::981dbfff9514e339ce5a9b806d27f8fd
http://arxiv.org/abs/1810.04533
http://arxiv.org/abs/1810.04533
Autor:
Laurens de Winter, Shaunee Cheng, Augustus J. E. M. Janssen, Paul van Adrichem, Wim M. J. Coene, Niels Geypen, Sven van Haver, Koen D'havé
Publikováno v:
Applied Optics, 53(12), 2562-2582. Optical Society of America (OSA)
In this paper, a new methodology is presented to derive the aberration state of a lithographic projection system from wafer metrology data. For this purpose, new types of phase-shift gratings (PSGs) are introduced, with special features that give ris
Autor:
Kaushik Sah, Sandip Halder, Philippe Leray, Paolo Parisi, Shaunee Cheng, Greg McIntyre, Jim Brown, Marco Polli, Vincent Truffert, Dieter Van den Heuvel
Publikováno v:
2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
With the continuous shrink of technology nodes, lithography becomes more and more challenging. At 20 nm node, double patterning technology (DPT) was the usual way of achieving the fine device structures. Until EUV is available as a high volume manufa
Autor:
Monique Ercken, Mireille Maenhoudt, Kurt G. Ronse, Shaunee Cheng, Geert Vandenberghe, Peter Leunissen
Publikováno v:
Journal of Photopolymer Science and Technology. 19:5-8
The Photopolymer Science and Technology Award No. 062100, the Best Paper Award 2006, was presented to Mireille Maenhoudt, Geert Vandenberghe, Monique Ercken, Shaunee Cheng, Peter Leunissen and Kurt Ronse, all from IMEC, for their outstanding contribu
Autor:
Shaunee Cheng, M. Meanhoudt, Monique Ercken, Peter Leunissen, Kurt G. Ronse, Geert Vandenberghe
Publikováno v:
Journal of Photopolymer Science and Technology. 18:571-577
At IMEC, one of the first full field 193nm immersion scanners has been installed, i.e. a XT:1250Di with maximum NA=0.85. Immersion tools are expected to show the same stability and control as the equivalent dry systems. Therefore CDU, focus and overl
Autor:
Shaunee Cheng, Avi Cohen, Erez Graitzer, Philippe Leray, Nadav Wertsman, Vladimir Dmitriev, Shiran Rehtan
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXVIII.
The introduction of double and triple patterning tightened the Overlay current nodes’ specifications across the industry to levels of 5nm and 3nm respectively. Overlay error is a combination of Intra-field and field-to-field errors. The Intra-field
Autor:
Shaunee Cheng, Philippe Leray, Christine Corinne Mattheus, Hugo Augustinus Joseph Cramer, Henk Niesing, Anne-Laure Charley, Baukje Wisse, Wouter Pypen, Alok Verma, Stefan Geerte Kruijswijk
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXVIII.
Monitoring and control of the various processes in the semiconductor require precise metrology of relevant features. Optical Critical Dimension metrology (OCD) is a non-destructive solution, offering the capability to measure profiles of 2D and 3D fe
Autor:
Zsolt Tokei, Julien Ryckaert, Morin Dehan, Bertrand Parvais, Bharani Chava, Marie Garcia Bardon, Shaunee Cheng, Rogier Baert, Aaron Thean, Piet Wambacq, An Steegen, Sushil Sakhare, P. Schuddinck, K. Croes, Kenichi Miyaguchi, Praveen Raghavan, Diederik Verkest, Abdelkarim Mercha, Mircea Dusa, Tsung-Te Liu, Arindam Mallik, B. Vandewalle, G. McIntyre, Doyoung Jang, Naoto Horiguchi, Philippe Leray, P. Weemaes, Jürgen Bömmels
Publikováno v:
CICC
Design-Technology co-optimization becomes a key knob to enable CMOS scaling. In this work we evaluate the technology options including lithography options as well as device options that are considered to enable N10 scaling by exploring their impact o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::210a224dcab6acd29ea28d63aaf34428
https://doi.org/10.1109/cicc.2014.6946037
https://doi.org/10.1109/cicc.2014.6946037
Autor:
David Laidler, Yongmei Chen, Jan Hermans, Huixiong Dai, Chris Ngai, Ming Mao, Philippe Leray, Ardavan Niroomand, Shaunee Cheng
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IV.
For device manufacturing at the 10nm node (N10) and below, EUV lithography is one of the technology options to achieve the required resolution. Besides high throughput and extreme resolution, excellent wafer CD, overlay and defect control are also re
Autor:
Joost Bekaert, Fahong Li, Shaunee Cheng, Philippe Leray, Anne-Laure Charley, Alek C. Chen, Hugo Augustinus Joseph Cramer, Lieve Van Look
Publikováno v:
SPIE Proceedings.
We studied the potential of optical scatterometry to measure the full 3D profile of features representative to real circuit design topology. The features were selected and printed under conditions to improve the measurability of the features by scatt