Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Shashwat Rathkanthiwar"'
Autor:
V. Kranthi Kumar, Ankit Rao, Tanushree H. Choudhury, Shashwat Rathkanthiwar, Priyadarshini Ghosh, S. K. Dhar, S. A. Shivashankar, Srinivasan Raghavan, Hareesh Chandrasekar
Publikováno v:
ACS Applied Nano Materials. 4:6734-6744
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2eab192581820237a3a1796652dac70e
https://doi.org/10.1021/acsanm.1c00758
https://doi.org/10.1021/acsanm.1c00758
Autor:
Shashwat Rathkanthiwar, Pramod Reddy, Baxter Moody, Cristyan Quiñones-García, Pegah Bagheri, Dolar Khachariya, Rafael Dalmau, Seiji Mita, Ronny Kirste, Ramón Collazo, Zlatko Sitar
Publikováno v:
Applied Physics Letters. 122:152105
High p-conductivity (0.7 Ω−1 cm−1) was achieved in high-Al content AlGaN via Mg doping and compositional grading. A clear transition between the valence band and impurity band conduction mechanisms was observed. The transition temperature depend
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52d49b474f621d4f199f5942d2086bcc
https://doi.org/10.1063/5.0143427
https://doi.org/10.1063/5.0143427
Autor:
Pegah Bagheri, Cristyan Quiñones-Garcia, Dolar Khachariya, James Loveless, Yan Guan, Shashwat Rathkanthiwar, Pramod Reddy, Ronny Kirste, Seiji Mita, James Tweedie, Ramón Collazo, Zlatko Sitar
Publikováno v:
Applied Physics Letters. 122:142108
Highly conductive Ge-doped AlN with conductivity of 0.3 (Ω cm)−1 and electron concentration of 2 × 1018 cm−3 was realized via a non-equilibrium process comprising ion implantation and annealing at a moderate thermal budget. Similar to a previou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbddbc7c46a821984a0d50643cc8465f
https://doi.org/10.1063/5.0146439
https://doi.org/10.1063/5.0146439
Autor:
Shashwat Rathkanthiwar, J. Houston Dycus, Seiji Mita, Ronny Kirste, James Tweedie, Ramon Collazo, Zlatko Sitar
Publikováno v:
Applied Physics Letters. 120
We report on the absence of strain relaxation mechanism in Al0.6Ga0.4N epilayers grown on (0001) AlN substrates for thickness as large as 3.5 μm, three-orders of magnitude beyond the Matthews–Blakeslee critical thickness for the formation of misfi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d03aa82a40e23b3b5fba15a137e6f53a
https://doi.org/10.1063/5.0092937
https://doi.org/10.1063/5.0092937
Autor:
Dolar Khachariya, Seiji Mita, Pramod Reddy, Saroj Dangi, J. Houston Dycus, Pegah Bagheri, M. Hayden Breckenridge, Rohan Sengupta, Shashwat Rathkanthiwar, Ronny Kirste, Erhard Kohn, Zlatko Sitar, Ramón Collazo, Spyridon Pavlidis
Publikováno v:
Applied Physics Letters. 120
The ultra-wide bandgap of Al-rich AlGaN is expected to support a significantly larger breakdown field compared to GaN, but the reported performance thus far has been limited by the use of foreign substrates. In this Letter, the material and electrica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4a9ce9b63e5d32698aec000329f0c14
https://doi.org/10.1063/5.0083966
https://doi.org/10.1063/5.0083966
Autor:
Anisha Kalra, Rangarajan Muralidharan, Srinivasan Raghavan, Digbijoy N. Nath, Shashwat Rathkanthiwar
Publikováno v:
IEEE Transactions on Electron Devices. 67:4281-4287
We demonstrate the influence of surface terminated V-pits in tuning dark current and spectral responsivity of Al0.25Ga0.75N-based UV-B photodetectors with metal–semiconductor–metal geometry on Si (111) substrate. We show that the V-pit morphologi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ccd13ae5783c4e0521a0458af0e95c81
https://doi.org/10.1109/ted.2020.3014852
https://doi.org/10.1109/ted.2020.3014852
Autor:
null Suraj, Shashwat Rathkanthiwar, Digbijoy Nath, Srinivasan Raghavan, Shankar Kumar Selvaraja
Publikováno v:
Optica Advanced Photonics Congress 2022.
We demonstrate polarization-independent grating couplers, single-mode waveguide and ring resonator for the first time in the GaN-on-Sapphire waveguide platform. We present material characterization, device simulation and experimental results.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9034a52bfbcc1630febfff0dc5fe7967
https://doi.org/10.1364/iprsn.2022.itu4b.1
https://doi.org/10.1364/iprsn.2022.itu4b.1
Autor:
Shashwat Rathkanthiwar, Pegah Bagheri, Dolar Khachariya, Seiji Mita, Cristyan Quiñones-García, Yan Guan, Baxter Moody, Pramod Reddy, Ronny Kirste, Ramón Collazo, Zlatko Sitar
Publikováno v:
Applied Physics Letters. 122:092103
Record-low p-type resistivities of 9.7 and 37 Ω cm were achieved in Al0.7Ga0.3N and Al0.8Ga0.2N films, respectively, grown on single-crystal AlN substrate by metalorganic chemical vapor deposition. A two-band conduction model was introduced to expla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::645de5ac74a51054044d11c6560ec1d4
https://doi.org/10.1063/5.0141863
https://doi.org/10.1063/5.0141863
Autor:
Pegah Bagheri, Cristyan Quiñones-Garcia, Dolar Khachariya, Shashwat Rathkanthiwar, Pramod Reddy, Ronny Kirste, Seiji Mita, James Tweedie, Ramón Collazo, Zlatko Sitar
Publikováno v:
Journal of Applied Physics. 132:185703
High room temperature n-type mobility, exceeding 300 cm2/Vs, was demonstrated in Si-doped AlN. Dislocations and CN−1 were identified as the main compensators for AlN grown on sapphire and AlN single crystalline substrates, respectively, limiting th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6af0b69810af3309ad00020c90637279
https://doi.org/10.1063/5.0124589
https://doi.org/10.1063/5.0124589
Autor:
Shashwat Rathkanthiwar, Milena B. Graziano, James Tweedie, Seiji Mita, Ronny Kirste, Ramon Collazo, Zlatko Sitar
Publikováno v:
physica status solidi (RRL) – Rapid Research Letters. 17:2200323
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d481b44630259967061c662b68bb6e68
https://doi.org/10.1002/pssr.202200323
https://doi.org/10.1002/pssr.202200323