Zobrazeno 1 - 10
of 238
pro vyhledávání: '"Shashkin, V.I."'
Autor:
Mansfeld, D.А., Vodopyanov, А.V., Golubev, S.V., Sennikov, P.G., Mochalov, L.A., Andreev, B.А., Drozdov, Yu N., Drozdov, М.N., Shashkin, V.I., Bulkin, P., Roca i Cabarrocas, P.
Publikováno v:
In Thin Solid Films 1 July 2014 562:114-117
Autor:
Vikharev A.L., Gorbachev A.M., Lobaev M.A., Radishev D.B., Isaev V.A., Bogdanov S.A., Drozdov M.N., Demidov E.V., Surovegina E.A., Shashkin V.I., Yunin P.A., Butler J.E.
Publikováno v:
EPJ Web of Conferences, Vol 149, p 01010 (2017)
Externí odkaz:
https://doaj.org/article/0d1afdc5e3b74147b4f95234440723e3
Autor:
Volkov, P.V., Goryunov, A.V., Daniltsev, V.M., Luk’yanov, A.Yu., Pryakhin, D.A., Tertyshnik, A.D., Khrykin, O.I., Shashkin, V.I.
Publikováno v:
In Journal of Crystal Growth 2008 310(23):4724-4726
Autor:
Gebauer, B *, Alimov, S.S, Klimov, A.Yu, Levchanovski, F.V, Litvinenko, E.I, Nikiforov, A.S, Prikhodko, V.I, Richter, G, Rogov, V.V, Schulz, Ch, Shashkin, V.I, Wilhelm, M, Wilpert, Th
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, A 2004 529(1):358-364
Autor:
Daniltsev, V.M. *, Drozdov, M.N., Drozdov, Yu.N., Gaponova, D.M., Khrykin, O.I., Murel, A.V., Shashkin, V.I., Vostokov, N.V.
Publikováno v:
In Journal of Crystal Growth 2003 248:343-347
Publikováno v:
In Organic Electronics 2002 3(3):93-103
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, B 2002 194(3):269-280
Autor:
Sennikov, P.G., Vodopyanov, A.V., Golubev, S.V., Mansfeld, D.A., Drozdov, M.N., Drozdov, Yu.N., Andreev, B.A., Gavrilenko, L.V., Pryakhin, D.A., Shashkin, V.I., Godisov, O.N., Glasunov, A.I., Safonov, A.Ju., Pohl, H.-J., Thewalt, M.L.W., Becker, P., Riemann, H., Abrosimov, N.V., Valkiers, S.
Publikováno v:
In Solid State Communications March 2012 152(6):455-457
Autor:
Luk'yanov, A.Yu., Volkov, P.V., Goryunov, A.V., Daniltsev, V.M., Pryakhin, D.A., Tertyshnik, A.D., Khrykin, O.I., Shashkin, V.I.
Thisworkillustratesapplicationofthe uniquefiber-optic instrumentationforin situmonitoringofseveral technologicalprocessescommonlyusedinfabricationof semiconducting thin-film nanostructures. This instrumentation is basedonprinciplesoflowcoherenttandem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2001::459809a8c67f66608f649e4298d1513e
http://essuir.sumdu.edu.ua/handle/123456789/20681
http://essuir.sumdu.edu.ua/handle/123456789/20681
Quantitative SIMS depth profiling of Al in AlGaN/AlN/GaN HEMT structures with nanometer-thin layers.
Publikováno v:
Surface & Interface Analysis: SIA; Feb2017, Vol. 49 Issue 2, p117-121, 5p