Zobrazeno 1 - 10
of 423
pro vyhledávání: '"Shashkin, V."'
Development of the Next-generation Atmosphere Dynamics Model in Russia: Current State and Prospects.
Publikováno v:
Lobachevskii Journal of Mathematics; Jul2024, Vol. 45 Issue 7, p3159-3172, 14p
Autor:
Tolstykh, M. A., Fadeev, R. Yu., Shashkin, V. V., Zaripov, R. B., Travova, S. V., Goyman, G. S., Alipova, K. A., Mizyak, V. G., Tischenko, V. A., Kruglova, E. N.
Publikováno v:
Russian Meteorology & Hydrology; Jul2024, Vol. 49 Issue 7, p576-586, 11p
Autor:
Minkov, G. M., Rut, O. E., Germanenko, A. V., Sherstobitov, A. A., Shashkin, V. I., Khrykin, O. I., Zvonkov, B. N.
Publikováno v:
Phys. Rev. B 67, 205306 (2003)
The contribution of the electron-electron interaction to conductivity is analyzed step by step in gated GaAs/InGaAs/GaAs heterostructures with different starting disorder. We demonstrate that the diffusion theory works down to $k_F l\simeq 1.5-2$, wh
Externí odkaz:
http://arxiv.org/abs/cond-mat/0209584
Autor:
Minkov, G. M., Rut, O. E., Germanenko, A. V., Sherstobitov, A. A., Shashkin, V. I., Khrykin, O. I., Daniltsev, V. M.
Publikováno v:
Phys. Rev. B 64, 235327 (2001)
The quantum correction to the conductivity have been studied in two types of 2D heterostructures: with doped quantum well and doped barriers. The consistent analysis shows that in the structures where electrons occupy the states in quantum well only,
Externí odkaz:
http://arxiv.org/abs/cond-mat/0104299
Autor:
Minkov, G. M., Germanenko, A. V., Rut, O. E., Khrykin, O. I., Shashkin, V. I., Danil'tsev, V. M.
Publikováno v:
Phys.Rev.B 62, 17089 (2000)
The weak localization correction to the conductivity in coupled double layer structures is studied both experimentally and theoretically. Statistics of closed paths has been obtained from the analysis of magnetic field and temperature dependencies of
Externí odkaz:
http://arxiv.org/abs/cond-mat/0003168
Autor:
Minkov, G. M., Negashev, S. A., Rut, O. E., Germanenko, A. V., Khrykin, O. I., Shashkin, V. I., Danil'tsev, V. M.
It is shown that a new kind of information can be extracted from the Fourier transform of negative magnetoresistance in 2D semiconductor structures. The procedure proposed provides the information on the area distribution function of closed paths and
Externí odkaz:
http://arxiv.org/abs/cond-mat/9912431
Autor:
Minkov, G. M., Negashev, S. A., Rut, O. E., Germanenko, A. V., Khrykin, O. I., Shashkin, V. I., Danil'tsev, V. M.
It is shown that a new kind of information can be extracted from the Fourier transform of negative magnetoresistance (MR) in 2D semiconductor structures. The procedure proposed provides the information on the area distribution function of the closed
Externí odkaz:
http://arxiv.org/abs/cond-mat/9904336
Autor:
Minkov, G. M., Negashev, S. A., Rut, O. E., Germanenko, A. V., Khrykin, O. I., Shashkin, V. I., Danil'tsev, V. M.
There was shown that Fourier transform of the negative magnetoresistance (NMR) which is due to interference correction to the conductivity contains the information about the area distribution function of the closed paths and about area dependence of
Externí odkaz:
http://arxiv.org/abs/cond-mat/9902038
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Publikováno v:
Journal of Applied Physics; 1/31/2020, Vol. 127 Issue 4, p1-8, 8p, 3 Diagrams, 1 Chart, 7 Graphs