Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Sharon Cui"'
Autor:
Xue Li Guan, Johnathan Yi-Xiong Loh, Marco Lizwan, Sharon Cui Mun Chan, Jeric Mun Chung Kwan, Tze Peng Lim, Tse Hsien Koh, Li-Yang Hsu, Bernett Teck Kwong Lee
Publikováno v:
Analytical chemistry.
With the global emergence of drug-resistant bacteria causing difficult-to-treat infections, there is an urgent need for a tool to facilitate studies on key virulence and antimicrobial resistant factors. Mass spectrometry (MS) has contributed substant
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b90148c83c0208de6194687c9fce4b1e
https://pubmed.ncbi.nlm.nih.gov/36599414
https://pubmed.ncbi.nlm.nih.gov/36599414
Akademický článek
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Autor:
Guan, Xue Li, Loh, Johnathan Yi-Xiong, Lizwan, Marco, Chan, Sharon Cui Mun, Kwan, Jeric Mun Chung, Lim, Tze Peng, Koh, Tse Hsien, Hsu, Li-Yang, Lee, Bernett Teck Kwong
Publikováno v:
Analytical Chemistry; 1/17/2023, Vol. 95 Issue 2, p602-611, 10p
Publikováno v:
Microbiology Resource Announcements
Here, we report the genome sequence of Enterobacter hormaechei subsp. steigerwaltii strain BEI01, originally deposited as a member of the Enterobacter cloacae complex. The genome is 4,900,246 bp in size with a GC content of 55.44%; it contains multid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::07ac6b6e497d0516384caff9f422821c
https://pubmed.ncbi.nlm.nih.gov/34264109
https://pubmed.ncbi.nlm.nih.gov/34264109
Here, we report the genome sequence of Enterobacter hormaechei subsp. steigerwaltii strain BEI01, originally deposited as a member of the Enterobacter cloacae complex. The genome is 4,900,246 bp in size with a GC content of 55.44%; it contains multid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d734249f7f0b1082282ecc9b5116ecdc
https://hdl.handle.net/10356/159405
https://hdl.handle.net/10356/159405
Autor:
Xin Wan, Peide D. Ye, Sharon Cui, Kai Ni, Daniel M. Fleetwood, Robert A. Reed, Sung-Jae Chang, En Xia Zhang, Mengwei Si, Jin Chen, Shufeng Ren, T. P. Ma, Xiao Sun
Publikováno v:
IEEE Transactions on Nuclear Science. 62:2888-2893
InGaAs nanowire (NW) gate-all-around (GAA) MOSFETs exhibit superior radiation hardness compared to planar devices and FinFETs, benefitting from reduced gate-oxide electric fields. Applied gate bias during irradiation, channel thickness, and presence
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aedbc2f9aebdd06dbfbb66c29cc37397
https://doi.org/10.1109/tns.2015.2497090
https://doi.org/10.1109/tns.2015.2497090
Autor:
Tomas Palacios, Xiao Sun, Sharon Cui, Daniel M. Fleetwood, T. P. Ma, E. Xia Zhang, Omair I. Saadat, Jin Chen
Publikováno v:
IEEE Transactions on Nuclear Science. 60:4074-4079
We have investigated the total ionizing dose (TID) radiation effects in AlGaN/GaN MOS-HEMTs as a function of dose and radiation bias, and compared them with conventional HEMTs. Under 10 keV X-ray irradiation, two distinct regimes of threshold voltage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6ca1e1bfa45918642d551997e273357
https://doi.org/10.1109/tns.2013.2278314
https://doi.org/10.1109/tns.2013.2278314
Publikováno v:
IEEE Transactions on Nuclear Science. 60:402-407
We have investigated total ionizing dose (TID) radiation effects in Al2O3-gated ultra-thin body In0.7Ga0.3 As MOSFETs. A non-monotonic dependence of the threshold voltage (Vth) on the X-ray radiation dose was observed and analyzed; the accompanying d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f721080be30453bce9ef1d118596ff0
https://doi.org/10.1109/tns.2012.2237522
https://doi.org/10.1109/tns.2012.2237522
Publikováno v:
Advanced Materials. 22:2962-2968
A broad range of materials is currently being studied for possible use as the insulating layer in next generation metal-oxide-semiconductor transistors. Inelastic electron tunneling spectroscopy (IETS) has become a powerful tool to characterize both
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::615e7dadda89443cbfcb9325af046bad
https://doi.org/10.1002/adma.200904311
https://doi.org/10.1002/adma.200904311
Publikováno v:
ECS Transactions. 6:321-329
We report a simple technique for making high quality Al2O3, which is compatible to standard CMOS processes, and can be readily applied to III-V substrates. Our preliminary study indicates that such Al2O3 deposited on III-V semiconductors, without any
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ac4a808994ff6e8db3c44fab89981bc
https://doi.org/10.1149/1.2727416
https://doi.org/10.1149/1.2727416