Zobrazeno 1 - 10
of 48
pro vyhledávání: '"Sharnali Islam"'
Autor:
Mehedi Hasan, Sujan Chowdhury, Omar Faruqe, Arindom Chakraborty, Hasan U. Zaman, Sharnali Islam
Publikováno v:
Engineering Reports, Vol 6, Iss 2, Pp n/a-n/a (2024)
Abstract This research aims to fill up the research gap in energy‐efficient transistor‐level wide word‐length carry circuit generator by using ripple carry (RC) and carry look‐ahead (CLA) method‐based hybrid 4‐bit carry generation process
Externí odkaz:
https://doaj.org/article/56399f7e9116494691f831a38991dfae
Autor:
A. A. Md. Monzur-Ul-Akhir, Saiful Islam, Md. Touhidul Imam, Sharnali Islam, Tasnia Hossain, Mohammad Junaebur Rashid
Publikováno v:
Memories - Materials, Devices, Circuits and Systems, Vol 5, Iss , Pp 100083- (2023)
A Kesterite material like CZTS provides the steering to the researcher with their tunable bandgap and high optical coefficient above 104 cm−1 for solar cells. These features make it a suitable material for a single junction solar cell increasing th
Externí odkaz:
https://doaj.org/article/03336f4c4a2f4158889e16b5c3e3521a
Autor:
S. M. Rakibul Hasan Shawon, Sajib Kapali, Imi Bintey Fariha Rahman, Sharnali Islam, Khaleda Ali
Publikováno v:
IEEE Access, Vol 11, Pp 77919-77928 (2023)
We report an efficient approach to enhance terahertz (THz)-guided modes for realizing subwavelength thick metamaterial devices (MMD). Here, a combination of hollow and slitted rings of the vanadium dioxide ( $VO_{2}$ )-based metasurface, having perfe
Externí odkaz:
https://doaj.org/article/d1cf9ed2a5b94e0cae373440ebc1772b
Autor:
Ohidul Islam, M Hussayeen Khan Anik, Sakib Mahmud, Joyprokash Debnath, Ahsan Habib, Sharnali Islam
Publikováno v:
JPhys Energy, Vol 6, Iss 2, p 025007 (2024)
We propose a novel approach to enhance the performance of perovskite solar cells (PSCs) by incorporating grated Cadmium Sulfide (CdS) and plasmonic gold nanoparticles (Au NPs) into the absorber layer. The CdS grating acts as the electron transport la
Externí odkaz:
https://doaj.org/article/3a853e28ca0b47188adbe23105d558bc
Autor:
Lubaba Tazrian Rahman, Mahmud Elahi Akhter, Faizul Rakib Sayem, Mainul Hossain, Rajib Ahmed, M. M. Lutfe Elahi, Khaleda Ali, Sharnali Islam
Publikováno v:
IEEE Access, Vol 10, Pp 20149-20158 (2022)
Chip-based photonic systems have undergone substantial progress over the last decade. However, the realization of photonic devices still depends largely on intuition-based trial-and-error methods, with a limited focus on characteristic analysis. In t
Externí odkaz:
https://doaj.org/article/456d98ec165b4cf38f5e4395950839ad
Autor:
Arindom Chakraborty, Monirul Islam, Fahim Shahriyar, Sharnali Islam, Hasan U. Zaman, Mehedi Hasan
Publikováno v:
Journal of Electrical and Computer Engineering, Vol 2023 (2023)
Smart home is a habitation that has been outfitted with technological solutions that are intended to provide people with services that are suited to their needs. The purpose of this article is to perform a systematic assessment of the latest smart ho
Externí odkaz:
https://doaj.org/article/ccff0162c4764b0ab9a2948baf16a28b
Publikováno v:
Advances in Materials Science and Engineering, Vol 2023 (2023)
Being one of the promising techniques for future computing systems, quantum-dot cellular automata (QCA)-based circuit design has gained massive interest among researchers due to which numerous QCA-based full adder (FA) circuits have been designed. Du
Externí odkaz:
https://doaj.org/article/cf70644526cf49ca9c58cad8194fe8d9
Autor:
Mehedi Hasan, Abdul Hasib Siddique, Abdal Hoque Mondol, Mainul Hossain, Hasan U. Zaman, Sharnali Islam
Publikováno v:
SN Applied Sciences, Vol 3, Iss 6, Pp 1-15 (2021)
Article Highlights Hybrid full adders offer better performance than single logic full adders Many existing full adder cells are not scalable Conventional Mirror CMOS full adder offers better performance than many recent full adders in wide adder stru
Externí odkaz:
https://doaj.org/article/b6a301b36f2747d399ea0e9df1715438
Publikováno v:
Results in Physics, Vol 34, Iss , Pp 105312- (2022)
In this work, we investigate the effects of changing device parameters such as channel length and gate dielectric of n-type double gate (DG) silicon tunneling field effect transistor (TFET). As the quantization effects can alter the device performanc
Externí odkaz:
https://doaj.org/article/67951523e9c149aab03cf28115da0960
Publikováno v:
Proceedings of International Exchange and Innovation Conference on Engineering & Sciences (IEICES). 8:183-188
The eco-friendly and highly stable lead-free MAGeI_3 perovskite solar cell has proved itself as a potential candidate for conventional lead-based perovskite solar cells with high efficiency. In this paper, numerical simulation has been performed over
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::da6e14840b46490ce2b15b9a49ec014a
http://hdl.handle.net/2324/5909089
http://hdl.handle.net/2324/5909089