Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Sharifa B. Utamuradova"'
Autor:
Sharifa B. Utamuradova, Zakirjan T. Azamatov, A.I. Popov, Mira R. Bekchanova, Murodjon A. Yuldoshev, Abror B. Bakhromov
Publikováno v:
East European Journal of Physics, Iss 3, Pp 278-281 (2024)
The results of a study of the optical, electrophotographic and holographic parameters of As-Se condensates from the prehistory of the original bulk materials are presented. It has been established that the electrophotographic parameters of freshly de
Externí odkaz:
https://doaj.org/article/ada99a90d6fb4ebe9d0a82b88246fe95
Publikováno v:
East European Journal of Physics, Iss 3, Pp 375-378 (2024)
In this work, new sensitive thermal sensors based on Si and Si were developed. Single-crystal n- and p-type silicon samples doped with phosphorus and boron during growth were used for the study. These samples were first doped with platinum and pallad
Externí odkaz:
https://doaj.org/article/0e316aae4ee84e4ea24b8c6310ce7918
Publikováno v:
East European Journal of Physics, Iss 2, Pp 353-357 (2024)
In this work, samples of single-crystalline silicon doped with tin were studied using X-ray diffraction and electron microscopy. It has been established that at a scattering angle of 2θ » 36.6° in the X-ray diffraction patterns of n-Si and Si samp
Externí odkaz:
https://doaj.org/article/7e74c7d0ecf046d69db317785eaf11ed
Autor:
Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Alisher Khaitbaev, Jonibek Khamdamov, Ulugbek M. Yuldoshev, Anifa D. Paluanova
Publikováno v:
East European Journal of Physics, Iss 2, Pp 327-335 (2024)
In this research, a comprehensive study of the effect of doping silicon with gold on the optical properties and morphology of silicon layers was carried out. For this purpose, the methods of Raman spectroscopy, Fourier transform infrared spectroscopy
Externí odkaz:
https://doaj.org/article/16c6d66d7ca446c6adb905d95196c489
Publikováno v:
East European Journal of Physics, Iss 2, Pp 380-383 (2024)
In this work, the influence of alpha particles, protons and gamma rays on the crystal structure and structural characteristics of n-type silicon (n-Si) single crystals was studied using X-ray diffraction. N-type silicon (KEF-40) was used for the stud
Externí odkaz:
https://doaj.org/article/62319d30c0fb4a50bcd5434d1f233cf9
Autor:
Khodjakbar S. Daliev, Sharifa B. Utamuradova, Alisher Khaitbaev, Jonibek J. Khamdamov, Shahriyor B. Norkulov, Mansur B. Bekmuratov
Publikováno v:
East European Journal of Physics, Iss 2, Pp 283-287 (2024)
In this work, the structural and optical characteristics of silicon (n-Si) samples and its compositions with dysprosium (n-Si-Dy) were analyzed using Fourier transform infrared spectroscopy (FTIR) and Raman spectroscopy methods. Characteristic peaks
Externí odkaz:
https://doaj.org/article/0832741afbdb42fcb2a53a1362d76ef4
Autor:
Sharifa B. Utamuradova, Khojakbar S. Daliev, Alisher I. Khaitbaev, Jonibek J. Khamdamov, Jasur Sh. Zarifbayev, Bekzod Sh. Alikulov
Publikováno v:
East European Journal of Physics, Iss 2, Pp 288-292 (2024)
The study of thin-film nanocomposites, including crystalline and amorphous silicon nanoparticles embedded in silicon oxide layers, is a key direction in the field of materials for optoelectronics. This study explored the interest in such composites,
Externí odkaz:
https://doaj.org/article/77e4b5aef785466b8198cf249ee7b912
Publikováno v:
East European Journal of Physics, Iss 2, Pp 304-308 (2024)
In this paper, using a scanning electron microscope (SEM) and atomic analysis, the location map of microcomposites formed on the surface of n-Si, p-Si, n-Si and p-Si samples was studied. Force microscope (AFM) research devices. The atomic fractions o
Externí odkaz:
https://doaj.org/article/826b06ff39164298a90e0ec4f3a4b30b
Autor:
Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Alisher Kh. Khaitbaev, Jonibek J. Khamdamov, Khusniddin J. Matchonov, Xushnida Y. Utemuratova
Publikováno v:
East European Journal of Physics, Iss 2, Pp 274-278 (2024)
Each crystal structure has its own phonon modes, which appear in the Raman spectrum of Raman scattering. In the case of silicon, phonon modes associated with the diamond structure of silicon can be detected. In a Raman spectrum, the position of the l
Externí odkaz:
https://doaj.org/article/c9a06351a6484a9589a266a8685808fb
Publikováno v:
East European Journal of Physics, Iss 1, Pp 375-379 (2024)
This paper presents the results of a study of the state of ytterbium atoms in silicon, carried out using the methods of Fourier transform infrared spectroscopy (IR) and Raman spectroscopy (RS). Silicon samples doped with ytterbium impurities were ana
Externí odkaz:
https://doaj.org/article/2832c671576b4d5da2a7514830ef34b0