Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Shaoyu Sun"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 1155-1160 (2021)
Dynamic ON resistance of GaN devices is a must-care point for users. In this paper, the reverse conduction of commercial GaN power transistors is studied. Even though the commercial HEMTs show stable performance in normal operation modes (off-to-on),
Externí odkaz:
https://doaj.org/article/fe9d6b4eacd8478182bc94567b676696
Publikováno v:
International Journal of Remote Sensing. 44:3031-3058
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b1de4763ce16d489a61381d0c9457f7
https://doi.org/10.1080/01431161.2023.2214276
https://doi.org/10.1080/01431161.2023.2214276
Publikováno v:
Chinese Journal of Electrical Engineering. 7:61-69
Gallium nitride (GaN) field-effect transistors have low ON resistance and switching losses in high-frequency (>MHz) resonant wireless power transfer systems. Nevertheless, their performance in the system is determined by their characteristics and ope
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d051196bd7717cd55963c351a80025a1
https://doi.org/10.23919/cjee.2021.000016
https://doi.org/10.23919/cjee.2021.000016
Publikováno v:
Electronics; Volume 12; Issue 9; Pages: 2087
LiDAR point cloud object recognition plays an important role in robotics, remote sensing, and automatic driving. However, it is difficult to fully represent the object feature information only by using the point cloud information. To address this cha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c1a1a9a1ea222677052e57c033af3b5e
https://doi.org/10.3390/electronics12092087
https://doi.org/10.3390/electronics12092087
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 1155-1160 (2021)
Dynamic ON resistance of GaN devices is a must-care point for users. In this paper, the reverse conduction of commercial GaN power transistors is studied. Even though the commercial HEMTs show stable performance in normal operation modes (off-to-on),
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ffbbe15036380399269426c5a6124107
https://doi.org/10.1109/jeds.2021.3099494
https://doi.org/10.1109/jeds.2021.3099494
Publikováno v:
2022 IEEE Asia-Pacific Conference on Image Processing, Electronics and Computers (IPEC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c81865b00f009d1e0e31f517a707a20b
https://doi.org/10.1109/ipec54454.2022.9777336
https://doi.org/10.1109/ipec54454.2022.9777336
Publikováno v:
Applied optics. 61(6)
Point cloud noise is inevitable in the LiDAR scanning of objects and affects measurement accuracy and integrity. To minimize such noise, we propose a gravitational feature function-based point cloud denoising algorithm and a universal gravitation for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e40e0f8177f98086cae5aa00924f1ba2
https://pubmed.ncbi.nlm.nih.gov/35201014
https://pubmed.ncbi.nlm.nih.gov/35201014
Publikováno v:
2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Reverse conduction of commercial GaN high electron mobility transistors (HEMT) for power applications, is found to induce significant dynamic ON resistance in some particular conditions, even though the commercial HEMTs show stable performance in nor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0524365ce4928338e8b61c79e4aa09d2
https://doi.org/10.1109/edtm50988.2021.9420891
https://doi.org/10.1109/edtm50988.2021.9420891
Publikováno v:
physica status solidi (a). 218:2170016
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bcc971f6b675d81364c3c3513867b7e4
https://doi.org/10.1002/pssa.202170016
https://doi.org/10.1002/pssa.202170016