Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Shaoyin Chen"'
Publikováno v:
Communications in Computer and Information Science ISBN: 9789811996962
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c4b2e3761e0f4170aa38feeb22cd7e6
https://doi.org/10.1007/978-981-19-9697-9_10
https://doi.org/10.1007/978-981-19-9697-9_10
Publikováno v:
Environmental Technology. 41:2935-2945
We investigated the effect of CMC dosage on dispersibility and sedimentation of FeS, and the effects of initial Cr(VI) concentrations, reaction temperatures and initial pH values on the Cr(VI) removal by Nano-FeS and CMC-FeS through experiments. At t
Publikováno v:
2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
Nanosecond (NLA) laser annealing is under consideration for inclusion into mainstream CMOS technology. Lack of suitable ultra-high speed pyrometery and the complexity of determining surface temperature of patterned, nanostructured wafers poses unique
Autor:
Shaoyin Chen, Xiuhua Meng, Robert H. Singer, Wei Gu, Linjie Zhu, Jianmin Luo, Qianjun Zhang, Delin Li
Publikováno v:
Journal of Biological Chemistry. 292:9787-9800
Local translation of specific mRNAs is regulated by dynamic changes in their subcellular localization, and these changes are due to complex mechanisms controlling cytoplasmic mRNA transport. The budding yeast Saccharomyces cerevisiae is well suited t
Autor:
Shaoyin Chen, Walter Kleemeier, Kevin W. Brew, Adra Carr, Oleg Gluschenkov, S. Choi, Curtis Durfee, Thirumal Thanigaivelan, Lan Yu, James J. Demarest, Yasir Sulehria, Jim Willis, Chengyu Niu, F. Lie, Heng Wu, Dechao Guo
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM).
We report on a significant pFET external resistance reduction (∼40%) and corresponding 10% R ON decrease by nanosecond laser annealing of S/D structures applicable to advanced technology nodes. Selective melting of pFET S/D elements is responsible
Autor:
Mark Raymond, Praneet Adusumilli, Hemanth Jagannathan, Adra Carr, Shogo Mochizuki, Oleg Gluschenkov, James J. Demarest, Yun Wang, Tenko Yamashita, Shaoyin Chen, Zuoguang Liu, Bei Liu, Hiroaki Niimi, Juntao Li
Publikováno v:
2017 Symposium on VLSI Technology.
Introduction of a dual beam (DB) millisecond (mSec) or nanosecond (nSec laser annealing in contact module results in a drastic reduction of contact resistivity. Dependence of this benefit on laser annealing parameters is detailed. The annealing power
Autor:
Qianjun, Zhang, Xiuhua, Meng, Delin, Li, Shaoyin, Chen, Jianmin, Luo, Linjie, Zhu, Robert H, Singer, Wei, Gu
Publikováno v:
The Journal of biological chemistry. 292(23)
Local translation of specific mRNAs is regulated by dynamic changes in their subcellular localization, and these changes are due to complex mechanisms controlling cytoplasmic mRNA transport. The budding yeast Saccharomyces cerevisiae is well suited t
Publikováno v:
2016 16th International Workshop on Junction Technology (IWJT).
Nanosecond (nsec) melt annealing offers unique capabilities such as ultra low thermal budget, high dopant activation and super abruption junctions. But process integration is more difficult than millisecond (msec) annealing due to two orders of magni
Publikováno v:
2014 20th International Conference on Ion Implantation Technology (IIT).
Evolution of CMOS technology has created new opportunities for millisecond annealing beyond the traditional dopant activation and junction formation. Strain enhancement, gate stack property modifications, silicide formation, and contact interface eng
Publikováno v:
2014 International Workshop on Junction Technology (IWJT).
We investigate the use of sub-millisecond laser spike annealing (LSA) for two applications: n-type germanium shallow junction activation and titanium silicide formation. For Ge junction, impact of various process parameters including dwell times, pea