Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Shaoping Tang"'
Autor:
Yanfen YANG, Minxian DUAN, Birong ZHANG, Suyun YAN, Wenbin SHI, Shaoping TANG, Li PAN, Xianyan ZHOU
Publikováno v:
Guangdong nongye kexue, Vol 51, Iss 4, Pp 115-124 (2024)
【Objective】The study aims to explore the change law of fruit quality of the main citrus varieties in Ruili area of Yunnan Province during maturity, offering a theoretical foundation for identifying the appropriate time for fruit harvesting.【Met
Externí odkaz:
https://doaj.org/article/3db7d46c2b884b97b16a5f229e4f2d38
Publikováno v:
IEEE Transactions on Electron Devices. 68:713-719
We investigated the effect of channel hot carrier (CHC) stressing on the creation of gate oxide defect centers causing random telegraph signals (RTSs) in pMOSFETs. To identify these stress-induced hole traps in the oxide and fully characterize their
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42f7790a9ac620f257c46619f4088b30
https://doi.org/10.1109/ted.2020.3044016
https://doi.org/10.1109/ted.2020.3044016
Publikováno v:
IEEE Transactions on Electron Devices. 65:4527-4534
We report on the investigation of random telegraph signals (RTSs) in pMOSFETs at variable temperatures to identify and characterize the hole traps residing at the oxide–semiconductor interface. Attractive center defects as well as a repulsive cente
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6dc4061da7a28f441b9276d501998aef
https://doi.org/10.1109/ted.2018.2866229
https://doi.org/10.1109/ted.2018.2866229
Publikováno v:
IEEE Transactions on Electron Devices. 63:1428-1436
Investigating random telegraph signals (RTS) observed in MOS devices is important for studying the gate-oxide defect characteristics and developing simulation and modeling tools in highly scaled devices. In this paper, we are presenting a comprehensi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a006ec6b7afda67f27a89ff24bb79364
https://doi.org/10.1109/ted.2016.2528218
https://doi.org/10.1109/ted.2016.2528218
Autor:
Dennis Buss, Dina El-Damak, Jorge Troncoso, Preet Garcha, Nachiket Desai, Django Trombley, Erika Lynn Mazotti, Joyce Mullenix, Anantha P. Chandrakasan, Shaoping Tang, Jeffrey H. Lang
Publikováno v:
Prof. Chandrakasan
ESSCIRC
ESSCIRC
Thermal energy harvesting systems use boost converters for high-efficiency low voltage operation, but lack the ability for low voltage startup without off-chip transformers. We present a cold start system that uses integrated magnetics instead of ext
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7e8307bdf2bea37da3aef84bc92669e1
https://hdl.handle.net/1721.1/125116
https://hdl.handle.net/1721.1/125116
Autor:
Darius L. Crenshaw, Shaoping Tang, J. Y. Yang, Stan Ashburn, Byron Lovell Williams, P. Madhani, Nandakumar Mahalingam, Kamel Benaissa, J. Ai, T. Blythe, Seetharaman Sridhar, Hisashi Shichijo, Gianluca Boselli, Song Zhao
Publikováno v:
IEEE Transactions on Electron Devices. 50:567-576
The use of a high-resistivity substrate extends the capability of standard digital CMOS technology to enable the integration of high-performance RF passive components. The impact of substrate resistivity on the key components of RF CMOS for system-on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be1ef1853e76b58f3bf05756c866ca32
https://doi.org/10.1109/ted.2003.810470
https://doi.org/10.1109/ted.2003.810470
Publikováno v:
Applied Surface Science. 172:41-46
The behavior of mobile protons at the Si/SiO 2 interface has drawn substantial interest since it was found to play the critical role in a proposed non-volatile memory device based on Si/SiO 2 /Si structures. We have investigated the bonding and diffu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::526840689b3f1bcef99cc20256552967
https://doi.org/10.1016/s0169-4332(00)00839-4
https://doi.org/10.1016/s0169-4332(00)00839-4
Publikováno v:
Physical Review B. 55:13953-13960
Electronic and structural properties of transition-metal/BaTiO{sub 3}(001) interfaces are studied by first-principles local-density full-potential linearized augmented plane-wave calculations with slab models. Equilibrium interlayer separations betwe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::488eb854ab528947f78636f11d5503c5
https://doi.org/10.1103/physrevb.55.13953
https://doi.org/10.1103/physrevb.55.13953
Publikováno v:
The Journal of Chemical Physics. 103:2555-2560
Results of extensive studies of metallic beryllium modeled with 135 atoms are reported using a first‐principles total energy molecular cluster approach based on the local density approximation. Binding energy, ionization potential, charge density,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1fa4e60c2ff6b1d8faf51f93898e1f6
https://doi.org/10.1063/1.469677
https://doi.org/10.1063/1.469677
Autor:
Joseph C. Woicik, Shaoping Tang, Gillian Franklin, Michael J. Bedzyk, Arthur J Freeman, Jene Andrew Golovchenko
Publikováno v:
Physical Review B. 52:R5515-R5518
X-ray standing-wave measurements, along with first-principles local-density molecular-cluster calculations, have determined the Bi-dimer orientation, location, and bond length for the Si(001)-(1{times}2):Bi surface. The results for Bi directly scale
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4f464dd04d6ea1481ee509fd6ca49fdb
https://doi.org/10.1103/physrevb.52.r5515
https://doi.org/10.1103/physrevb.52.r5515