Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Shaoning Yao"'
Publikováno v:
Microelectronic Engineering. 85:401-407
We have used electrostatic force microscopy (EFM) to detect nanoscale dielectric constant variations resulting from damascene processing of blanket and patterned films of nanoporous methyl silsesquioxane (MSQ) (k=2.2). Ash processing can cause signif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15e3e0b5539446795f7a0db5fe97244a
https://doi.org/10.1016/j.mee.2007.07.014
https://doi.org/10.1016/j.mee.2007.07.014
Publikováno v:
2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM).
Matched circuit components are widely used in logic circuits including resistors, capacitors and transistors. Any variations in those components could cause mismatch in circuit performance. In advanced technology nodes, double patterning (litho/etch/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9392c1d3a8a05287fb734f085a8c5aa4
https://doi.org/10.1109/iitc-mam.2015.7325648
https://doi.org/10.1109/iitc-mam.2015.7325648
Publikováno v:
The Journal of Physical Chemistry A. 108:6944-6952
We have measured the lifetime τ of the lowest triplet state T 1 in free C 6 0 by a pump-probe experiment using lasers with nanosecond pulse durations. At low pump fluence the population of T 1 decays with a distinct, narrow distribution of lifetimes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b96b34cf517aa20fceda7085108a03ca
https://doi.org/10.1021/jp048313u
https://doi.org/10.1021/jp048313u
Autor:
Baozhen Li, Shaoning Yao, Yun-Yu Wang, Matthew Angyal, Cathryn Christiansen, Terence Kane, Vincent J. McGahay
Publikováno v:
2012 IEEE International Reliability Physics Symposium (IRPS).
Mn doping in Cu seed has been used to improve EM performance at the 32nm technology node. This paper will show that on an optimized process with CuMn there were different degrees of EM enhancement for geometric variations including line width and ele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f66442a87a40842ca46981b58fe91cf
https://doi.org/10.1109/irps.2012.6241856
https://doi.org/10.1109/irps.2012.6241856
Autor:
Yun-Yu Wang, Matthew Angyal, Vincent J. McGahay, Baozhen Li, Terence Kane, Cathryn Christiansen, Shaoning Yao
Publikováno v:
2011 International Reliability Physics Symposium.
Suppressing Cu diffusion along the Cu/Cap interface has proven to be one of the most effective ways to enhance the electromigration (EM) resistance of advanced Cu interconnects. Two methods, depositing a thin layer of CoWP on the Cu surface and dopin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4467af79add9f5793f2775f9b798cdb4
https://doi.org/10.1109/irps.2011.5784493
https://doi.org/10.1109/irps.2011.5784493
Autor:
Oluwafemi O. Ogunsola, Fen Chen, Andrew H. Simon, Shaoning Yao, Stephan Grunow, Tom C. Lee, Baozhen Li, Paul S. McLaughlin, Matthew Angyal, Vincent J. McGahay, Cathryn Christiansen
Publikováno v:
MRS Proceedings. 1335
This paper introduces a highly reliable Cu interconnect technology at the 32 nm node with CuMn alloy seed. A CuMn alloy liner seed process combined with a non-gouging liner has been integrated into the minimum-pitch wiring level. Stress migration fai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2f1ae5aedfda0e9da1312fcfc0b12ff
https://doi.org/10.1557/opl.2011.1261
https://doi.org/10.1557/opl.2011.1261
Autor:
Shaoning Yao, Todd S. Gross
Publikováno v:
MRS Proceedings. 863
Electrostatic force microscopy (EFM) was used to measure the extent of dielectric damage from plasma processing of nanoporous, low k methyl silsesqioxane (MSQ) interconnect structures with approximately 50 nm spatial resolution. Single level patterns
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca608c26bce93e515233dfa51c569504
https://doi.org/10.1557/proc-863-b2.4
https://doi.org/10.1557/proc-863-b2.4
Publikováno v:
2011 IEEE International Reliability Physics Symposium (IRPS); 2011, p3E.3.1-3E.3.5, 1p