Výsledky vyhledávání - "Shaoling, Guo"

Auger recombination at low temperatures in InGaAs/InAlAs quantum well probed by photoluminescence

Autor: Yuxin Song, Xiren Chen, Liangqing Zhu, Liang Zhu, Shumin Wang, F. X. Zha, Shaoling Guo, Zhen Qi, Jun Shao

Publikováno v: Journal of Luminescence. 169:132-136

This paper reports abnormal effects of Auger recombination in InGaAs/InAlAs quantum well probed by steady state temperature and excitation-power dependent photoluminescence measurements. The transition from Auger recombination to Shockley–Read–Ha

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::352d473f0c75422ced99c2766e10eef5
https://doi.org/10.1016/j.jlumin.2015.08.075

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Above-Hg1−x Cd x Te-bandgap photoluminescence and interfacial channels in Hg1−x Cd x Te-CdTe heterostructure

Autor: Zhen Qi, Liang Zhu, Liangqing Zhu, Xiren Chen, Shaoling Guo, Lu Chen, Jun Shao, Li He

Publikováno v: physica status solidi (b). 253:377-383

HgCdTe–CdTe heterostructures are important for HgCdTe-based low-dimensional structures and infrared detectors. However, studies concerning parasitic heterostructure introduced by the passivation are very limited and within electrical characterizati

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cdd5c3a9dfff5ff2b18c343a61916e03
https://doi.org/10.1002/pssb.201552515

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Akademický článek

Modulation mechanism of infrared photoreflectance in narrow-gap HgCdTe epilayers: A pump power dependent study.

Autor: Jun Shao, Lu Chen, F. -X. Zha, Wei Lu, Xiang Lü, Shaoling Guo, Li He, Junhao Chu

Publikováno v: Journal of Applied Physics; Aug2010, Vol. 108 Issue 2, p023518, 8p, 6 Graphs

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Photoluminescence and electrical characteristics of arsenic-doped HgCdTe

Autor: Xiao-Hua Zhang, Li He, Lu Chen, Shaoling Guo, Tie Lin, Junhao Chu

Publikováno v: JOURNAL OF INFRARED AND MILLIMETER WAVES. 31:407-410

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0d41cc88ea2c92450b423d970a01d8ed
https://doi.org/10.3724/sp.j.1010.2012.00407

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Enhancement and anisotropy of the Landaugfactor in modulation-doped Al0.22Ga0.78N/GaN heterostructures

Autor: J.-M. Liu, K. Hoshino, Yi Shi, Ben Shen, Z. W. Zheng, Y. S. Gui, C. P. Jiang, Z. J. Qiu, H. M. Zhou, Shaoling Guo, Y. Arakawa, Rui Zhang, N. Tang, Junhao Chu, Youdou Zheng, D. J. Chen

Publikováno v: Journal of Applied Physics. 95:2473-2476

Spin splitting of the two-dimentional electron gas (2DEG) in modulation-doped Al0.22Ga0.78N/GaN heterostructures has been studied by means of magnetotransport measurements at low temperatures and high magnetic fields. The spin splitting is observed i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c11079228cc7074481307cd7e1b75b9d
https://doi.org/10.1063/1.1642732

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Multisubband transport of the two-dimensional electron gas in AlxGa1−xN/GaN heterostructures

Autor: Yi Shi, T. Someya, Ben Shen, Y. S. Gui, Junhao Chu, Z. W. Zheng, Youdou Zheng, Y. Arakawa, Shaoling Guo, Rui Zhang, C. P. Jiang

Publikováno v: Journal of Applied Physics. 93:1651-1655

Multisubband transport of the two-dimensional electron gas (2DEG) in modulation-doped Al0.22Ga0.78N/GaN heterostructures has been investigated by means of magnetotransport measurements at low temperatures and high magnetic fields. It is found that th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b9afac499118951468e2f18dde42d79b
https://doi.org/10.1063/1.1536720

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