Zobrazeno 1 - 10
of 136
pro vyhledávání: '"ShaoFeng Yu"'
Autor:
Yage Zhao, Zhongshan Xu, Huawei Tang, Yusi Zhao, Peishun Tang, Rongzheng Ding, Xiaona Zhu, David Wei Zhang, Shaofeng Yu
Publikováno v:
Micromachines, Vol 15, Iss 2, p 218 (2024)
As the architecture of logic devices is evolving towards gate-all-around (GAA) structure, research efforts on advanced transistors are increasingly desired. In order to rapidly perform accurate compact modeling for these ultra-scaled transistors with
Externí odkaz:
https://doaj.org/article/7ba72594ae51493fbd7777ba25fbedcc
Publikováno v:
Advances in Materials Science and Engineering, Vol 2016 (2016)
A comparison test of different tailings used for underground backfill was conducted, using neutralized tailings from BIOX and flotation tailings of Jinfeng Mine. Laboratory comparison test results show that, with neutralized tailings, when the cement
Externí odkaz:
https://doaj.org/article/16423468474547508ddbd9ccdbe68c7c
Autor:
Zhongshan Xu, Guo-Dong Zhao, Rongzheng Ding, Yage Zhao, Qing Xie, Yudong Lv, Mingyan Chen, Xiaona Zhu, Shaofeng Yu
Publikováno v:
IEEE Transactions on Electron Devices. 70:1589-1594
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::176f900251caec2f618a358566483c30
https://doi.org/10.1109/ted.2023.3246435
https://doi.org/10.1109/ted.2023.3246435
Autor:
Guodong Qi, Weizhuo Gan, Lijun Xu, Jiangtao Liu, Qihang Yang, Xiaona Zhu, Jiuren Zhou, Xinyu Ma, Guangxi Hu, Tao Chen, Shaofeng Yu, Zhenhua Wu, Huaxiang Yin, Ye Lu
Publikováno v:
IEEE Transactions on Electron Devices. 69:3483-3489
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db348b61f6f3f365df49ae294150720b
https://doi.org/10.1109/ted.2022.3164372
https://doi.org/10.1109/ted.2022.3164372
Publikováno v:
International Journal of Emerging Electric Power Systems.
With the acceleration of power grid modernization, the scale of power grid is expanding. Running operations are becoming increasingly complex. There is a great demand for the analysis and calculation of the operation status of the power grid, line tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be14a321f51bc968dd01294ee9c53b05
https://doi.org/10.1515/ijeeps-2022-0342
https://doi.org/10.1515/ijeeps-2022-0342
Autor:
Bingqi Sun, Zhongshan Xu, Rongzheng Ding, Jingwen Yang, Kun Chen, Saisheng Xu, Min Xu, Ye Lu, Xiaona Zhu, Shaofeng Yu, David Zhang
Publikováno v:
IEEE Transactions on Electron Devices. 69:936-941
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0dd8833ebdb831521532c811641c23a3
https://doi.org/10.1109/ted.2022.3144648
https://doi.org/10.1109/ted.2022.3144648
The intensively concerned hafnia-based ferroelectric (FE) material has been controversial over whether the origin of its observed ferroelectricity being structural or electrochemical. We revisit the rigorous application of modern theory of polarizati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::512eef06aab5aca9a0a1899f808e907a
https://doi.org/10.21203/rs.3.rs-2407551/v1
https://doi.org/10.21203/rs.3.rs-2407551/v1
Publikováno v:
2023 IEEE 3rd International Conference on Power, Electronics and Computer Applications (ICPECA).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e24de851de05fa57a9b0a76fd38af129
https://doi.org/10.1109/icpeca56706.2023.10076169
https://doi.org/10.1109/icpeca56706.2023.10076169
Publikováno v:
Proceedings of the World Conference on Intelligent and 3-D Technologies (WCI3DT 2022) ISBN: 9789811971839
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e93920f6570eafed1552c775bf0c8927
https://doi.org/10.1007/978-981-19-7184-6_48
https://doi.org/10.1007/978-981-19-7184-6_48
Autor:
Jing Wan, Zhenhua Wu, Shaofeng Yu, Huaxiang Yin, Guodong Qi, Ye Lu, Tao Chen, Guangxi Hu, Qihang Yang, Weizhuo Gan
Publikováno v:
IEEE Transactions on Electron Devices. 68:4181-4188
Transistor compact model (TCM) is the key bridge between process technology and circuit design. Typically, TCM is desired to capture the nonlinear device electronic characteristics and their high-order derivatives. However, for the novel devices in a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5bf8b20bad0f7494e11990991b139ea
https://doi.org/10.1109/ted.2021.3093376
https://doi.org/10.1109/ted.2021.3093376