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Autor:
Shang-Shian Yang, Hong-Lin Lai, Chih-Chia Chen, Shao-Tse Lu, Yu-Min Dai, Wen-Cheng Cheng, Yiin-Kuen Fuh, Tomi T. Li
Publikováno v:
Journal of Materials Research and Technology, Vol 30, Iss , Pp 2754-2767 (2024)
Physical Vapor Deposition (PVD) of Tantalum/Tantalum Nitride (Ta/TaN) liner and barrier plays a crucial role in the copper-interconnecting part of semiconductor manufacturing, and this is used for the 130 nm–5nm technology node and beyond. This stu
Externí odkaz:
https://doaj.org/article/8d5f527841494f8eadd011ef8296c296
