Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Shao-Pin Chiu"'
Autor:
Yi Wan, En Li, Zhihao Yu, Jing-Kai Huang, Ming-Yang Li, Ang-Sheng Chou, Yi-Te Lee, Chien-Ju Lee, Hung-Chang Hsu, Qin Zhan, Areej Aljarb, Jui-Han Fu, Shao-Pin Chiu, Xinran Wang, Juhn-Jong Lin, Ya-Ping Chiu, Wen-Hao Chang, Han Wang, Yumeng Shi, Nian Lin, Yingchun Cheng, Vincent Tung, Lain-Jong Li
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-8 (2022)
Chemical vapor deposition enables the scalable production of 2D semiconductors, but the grown materials are usually affected by high defect densities. Here, the authors report a hydroxide vapour phase deposition method to synthesize wafer-scale monol
Externí odkaz:
https://doaj.org/article/b75bdb1edf6c415fa39d0d189ad85c76
Autor:
Shao-Pin Chiu, 邱劭斌
88
The quantum transport of electrons is a significant problem in condensed matter physics. There are two major interactions in the quantum transport: one is the electron-phonon interaction, the other is the electron-electron interaction. Curren
The quantum transport of electrons is a significant problem in condensed matter physics. There are two major interactions in the quantum transport: one is the electron-phonon interaction, the other is the electron-electron interaction. Curren
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/87838649525423795996
Publikováno v:
Nanoscale. 15:9179-9186
We report the observation of enhanced interfacial two-component superconductivity possessing a dominant triplet component in nonmagnetic CoSi2/TiSi2 superconductor/normal-metal planar heterojunctions.
Autor:
Po-Yu Chien, Chih-Yuan Wu, Ruey-Tay Wang, Shao-Pin Chiu, Stefan Kirchner, Sheng-Shiuan Yeh, Juhn-Jong Lin
We present 1/$f$ noise measurements of IrO$_2$ nanowires from 1.7 to 350 K. Results reveal that the noise magnitude (represented by Hooge parameter $\gamma$) increases at low temperatures, indicating low-frequency resistance noise from universal cond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::567f7745d17e55f0cc3993b24639bc97
http://arxiv.org/abs/2302.08821
http://arxiv.org/abs/2302.08821
Autor:
Yi, Wan, En, Li, Zhihao, Yu, Jing-Kai, Huang, Ming-Yang, Li, Ang-Sheng, Chou, Yi-Te, Lee, Chien-Ju, Lee, Hung-Chang, Hsu, Qin, Zhan, Areej, Aljarb, Jui-Han, Fu, Shao-Pin, Chiu, Xinran, Wang, Juhn-Jong, Lin, Ya-Ping, Chiu, Wen-Hao, Chang, Han, Wang, Yumeng, Shi, Nian, Lin, Yingchun, Cheng, Vincent, Tung, Lain-Jong, Li
Publikováno v:
Nature communications. 13(1)
Two-dimensional (2D) semiconducting monolayers such as transition metal dichalcogenides (TMDs) are promising channel materials to extend Moore's Law in advanced electronics. Synthetic TMD layers from chemical vapor deposition (CVD) are scalable for f
Publikováno v:
Science Advances
Unconventional superconductivity and in particular triplet superconductivity have been front and center of topological materials and quantum technology research. Here we report our observation of triplet superconductivity in nonmagnetic CoSi$_2$/TiSi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::46dfffcad398f69d9e2ac013a8527521
http://arxiv.org/abs/2012.13679
http://arxiv.org/abs/2012.13679
Publikováno v:
Physical Review Applied. 14
The present-day nanodevice dimensions continuously shrink, with the aim to prolong Moore's law. As downsizing meticulously persists, undesirable dynamic defects, which cause low-frequency noise and structural instability, play detrimental roles on li
Publikováno v:
Japanese Journal of Applied Physics. 60:088002
We demonstrate two-step electron-beam lithographic fabrication of transparent disilicide superconductor/normal-metal CoSi2/TiSi2 contact junctions, where CoSi2 is a superconductor (S) with a transition temperature Tc ≈ 1.5 K, and TiSi2 is a normal
Autor:
Shao Pin Chiu, Juhn-Jong Lin, Chih-Wei Luo, Jiunn-Yuan Lin, Phuoc Huu Le, Kaung Hsiung Wu, Sheng-Rui Jian, Marin Gospodinov
Publikováno v:
Journal of Alloys and Compounds. 679:350-357
New ternary phase of Bi 3 Se 2 Te thin films were successfully grown through pulsed laser deposition with a single Bi 2 Se 2 Te crystal as the target. Bi-rich and Se- and Te-deficient compositions deposited at a substrate temperature ( T s ) of 250
Autor:
Shao-Pin Chiu1, Tsuei, C. C.2,3, Sheng-Shiuan Yeh1,4, Fu-Chun Zhang5, Kirchner, Stefan6,7 stefan.kirchner@correlated-matter.com, Juhn-Jong Lin1,8 jjlin@mail.nctu.edu.tw
Publikováno v:
Science Advances. 7/14/2021, Vol. 7 Issue 29, p1-9. 9p.