Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Shao-Hwa Hu"'
Publikováno v:
Symmetry, Vol 14, Iss 10, p 2144 (2022)
Silicon carbide (SiC) has good chemical resistance, excellent mechanical properties, thermal conductivity, especially in extreme conditions of application, and has proved to be a very promising electromagnetic absorption material. However, single sil
Externí odkaz:
https://doaj.org/article/3f8996d6a07546bfadffd71d1591419d
Autor:
Shao-Hwa Hu, 胡少華
99
The depletion of natural resources has led most industries to treat the protection of the environment as a core business goal. In contrast with traditional waste recycling techniques、「Green Chemistry」 makes a significant contribution to
The depletion of natural resources has led most industries to treat the protection of the environment as a core business goal. In contrast with traditional waste recycling techniques、「Green Chemistry」 makes a significant contribution to
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/r8j5r8
Publikováno v:
Journal of Electronic Materials. 52:270-275
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab9f1277646de9397d2163f30748bb77
https://doi.org/10.1007/s11664-022-09983-z
https://doi.org/10.1007/s11664-022-09983-z
Publikováno v:
ChemistrySelect. 6:11630-11637
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4d8e99404c094ae5a0c92f53cde2066
https://doi.org/10.1002/slct.202102209
https://doi.org/10.1002/slct.202102209
Publikováno v:
Journal of Materials Science: Materials in Electronics. 32:20965-20972
This study primarily used metal-organic chemical vapor deposition to grow gallium nitride (GaN) light-emitting diode (LED) structures with InGaN quantum wells (QWs). During the InGaN QW growing process, an identical concentration of trimethylindium g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9663595302e9b07ce7318e30770808ad
https://doi.org/10.1007/s10854-021-06516-y
https://doi.org/10.1007/s10854-021-06516-y
Publikováno v:
Journal of Renewable Materials; 2023, Vol. 11 Issue 8, p3371-3385, 15p
Publikováno v:
Journal of Electronic Materials. 49:5667-5673
A conductive metal thin film Al is deposited as a buffer to form Al/AZO double layers. The Taguchi method, based on the Al thickness, annealing temperature and duration, is used to determine the optimum synthesis conditions. The quality and thickness
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6a341ed405cd05b5cc95a0ed86101ae
https://doi.org/10.1007/s11664-020-08323-3
https://doi.org/10.1007/s11664-020-08323-3
Publikováno v:
Journal of Materials Science: Materials in Electronics. 31:7616-7622
This study discussed a surface processing technique for improving the energy conversion rate of solar cells with silicon as the substrate. The technique involves texturing the surface of a silicon substrate and coating it with an antireflective layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a42fd678724627525aefd744bda6c09
https://doi.org/10.1007/s10854-020-03253-6
https://doi.org/10.1007/s10854-020-03253-6
Silicon carbide (SiC) possesses unique properties and is widely applied in household and military uses. This study explored the manufacturing process of SiC fibers. In the experiment, polycarbosilane (PCS) was dissolved in a mixed solvent of C8H10 an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d82ab97e6f1f979c716598b93fda85d
https://doi.org/10.21203/rs.3.rs-23086/v1
https://doi.org/10.21203/rs.3.rs-23086/v1
Publikováno v:
Vacuum. 194:110557
A low-cost chemical reduction method was applied to reduced gold nanoparticles (Au-NPs), which were used in aluminum-doped zinc oxide (Al:ZnO, AZO) film deposited using a magnetron sputtering system. The Au-NPs were mixed under different process para
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26bec3435edb5fd8e87c49a9a15aa0ba
https://doi.org/10.1016/j.vacuum.2021.110557
https://doi.org/10.1016/j.vacuum.2021.110557